Seiko Instruments Inc

Other

Seiko Seiki Kabushiki Kaisha

Yutaka Hayashi

Hayashi, Yutaka

Jun Osanai

Hisashi Hasegawa

Yoshifumi Yoshida

Hirofumi Harada

Yutaka Saitoh

Kazutoshi Ishii

Keisuke Uemura

Yoshikazu Kojima

Hiroaki Takasu

Yuichiro Kitajima

Yukimasa Minami

Miwa Wake

Kenji Kitamura

Tomomitsu Risaki

Shinichi Yoshida

Mika Shiiki

Akiko Tsukamoto

Yutaka Saito

Masaaki Kamiya

Minoru Sudo

Shinjiro Kato

Hideo Yoshino

Yoshitsugu Hirose

Sumio Koiwa

Fumiyasu Utsunomiya

Kazuhiro Tsumura

Masanori Miyagi

Toshiharu Kogure

Masayuki Hashitani

Naoto Saitoh

Haruo Konishi

Ayako Inoue

Osamu Uehara

Katsura Tomotaki

A reference voltage generator has a depletion mode MOS transistor of a first conductivity type for supplying a constant current flow, and an enhancement mode MOS transistor of the first conductivity type having a diode connection to the depletion mode MOS transistor for generating a reference voltage based on a constant current supplied by the depletion mode MOS transistor. The enhancement mode MOS transistor has a mobility substantially equal to a mobility of the depletion mode MOS transistor such that the enhancement mode MOS transistor and the depletion mode MOS transistor have substantially equal temperature characteristics.

Reference voltage generator

Provided is a semiconductor device configured to prevent a penetration of moisture into an internal circuit. The moisture from a bonding pad to the internal circuit is blocked by providing an underlying polysilicon film () formed as a lower layer of a bonding pad, a bonding pad () formed above the underlying polysilicon film () through intermediation of an inter-layer insulation film (), and an outer circumferential interconnecting line () formed so as to surround an outer side of the bonding pad, and by connecting the outer circumferential interconnecting line () and the underlying polysilicon film () with a continuous outer circumferential contact.

Semiconductor device

A reference voltage generating circuit has more than two first wells each having a first impurity concentration and more than two second wells each having a second impurity concentration different from the first impurity concentration. A first group of MOS transistors has more than two MOS transistors formed in respective ones of the first wells. A second group of MOS transistors has More than two MOS transistors formed in respective ones of the second wells.

Semiconductor reference voltage generating device

A semiconductor device has a semiconductor substrate with a semiconductor layer, a first element region formed on the semiconductor layer and on which are formed first semiconductor elements sensitive to stress, and a second element region formed on the semiconductor layer and on which are formed second semiconductor elements less sensitive to stress than the first semiconductor elements. The first and second element regions are formed in the semiconductor layer at preselected depths from a surface of the semiconductor layer. A buffer region for suppressing stress generated in the first element region is formed of a trench filled with a filler material and extending into the semiconductor layer so that a depth of the trench from the surface of the semiconductor layer is greater than the preselected depths, and so that a portion of the semiconductor layer exists under the filled trench of the buffer region.

Trench portions () are formed in a well () in order to provide unevenness in the well (). A gate electrode () is formed via an insulating film () on the upper surface and inside of the trench portions (). A source region () is formed on one side of the gate electrode () in a gate length direction while a drain region () on another side. Both of the source region () and the drain region () are formed down to near the bottom portion of the gate electrode (). By deeply forming the source region () and the drain region (), current uniformly flows through the whole trench portions (), and the unevenness formed in the well () increases the effective gate width to decrease the on-resistance of a semiconductor deviceand to enhance the drivability thereof.

Trench MOS transistor and method of manufacturing the same

Provided is a memory circuit in which erroneous writing is less likely to occur at the time of power-on. A memory circuit () includes: a P-channel non-volatile memory element () for writing, to which a voltage is applied between a source and a drain thereof only during writing so as to write data; and an N-channel non-volatile memory element () for reading, which has a control gate and a floating gate provided in common to a control gate and a floating gate of the P-channel non-volatile memory element () and to which a voltage is applied to a source and a drain thereof only during reading so as to read the data.

Memory circuit

A field effect transistor has an insulating substrate, a semiconductor thin film formed on the insulating substrate, and a gate insulating film on the semiconductor thin film. A first gate electrode is formed on the gate insulating film. A first region and a second region having a first conductivity type are formed on or in a surface of the semiconductor film on opposite sides of the first gate electrode in a length direction thereof. A third region having a second conductivity type opposite the first conductivity type is arranged on or in the semiconductor film side by side with the second region in a width direction of the first gate electrode. The third region and the second region are in contact with each other and make a low resistance junction. A second gate electrode is formed on the gate insulating film along the second region. A fourth region having the first conductivity type is formed on or in the semiconductor film on an opposite side of the second region with respect to the second gate electrode. One of the first and the fourth regions is used as an output region according to a circuit operation.

Field effect transistor formed on an insulating substrate and integrated circuit thereof

Trench portions () are formed in a well () in order to provide unevenness in the well (). A gate electrode () is formed via an insulating film () on the upper surface and inside of the trench portions (). A source region () is formed on one side of the gate electrode () in a gate length direction while a drain region () on another side. Both of the source region () and the drain region () are formed down to near the bottom portion of the gate electrode (). By deeply forming the source region () and the drain region (), current uniformly flows through the whole trench portions (), and the unevenness formed in the well () increase the effective gate width to decrease the on-resistance of a semiconductor deviceand to enhance the drivability thereof.

In a method of manufacturing a semiconductor device, a first film is formed directly on a semiconductor substrate and a second film is formed on the first film. A region of the second film is then etched to form an opening that exposes the first film. The first film is then arbitrarily patterned by etching to expose a surface of the semiconductor substrate. Thereafter, the second film and the exposed surface of the semiconductor substrate are simultaneously etched using the patterned first film as a mask and in an etching ambient having a low etching rate for the first film and having a high etching rate for the second film and the semiconductor substrate until the second film is almost completely etched and a detection amount of a monitored element of the first film increases.

Method for manufacturing semiconductor device

A high voltage operating field effect transistor has a source region and a drain region spaced apart from each other in a surface of a substrate. The source region is operative to receive at least one of a signal electric potential and a signal current. A semiconductor channel formation region is disposed in the surface of the substrate between the source region and the drain region. A gate region is disposed above the channel formation region and is operative to receive a bias electric potential having an absolute value equal to or larger than a first constant electric potential which changes according to an increase or decrease in a drain electric potential. A gate insulating film region is disposed between the channel formation region and the gate region.

Method of high voltage operation of field effect transistor

Provided is a metal oxide semiconductor (MOS) capacitor, in which trenches () are formed in a charge accumulation region () of a p-type silicon substrate () to reduce a contact area between the p-type silicon substrate () and a lightly doped n-type well region (), thereby reducing a leak current from the lightly doped n-type well region () to the p-type silicon substrate ().

Deviation occurring in a particular region in a plane of a resistor group which constitutes a semiconductor integrated circuit is improved and a quick increase in yield is accomplished. Provided is a fuse trimming method for a semiconductor device in which circuit elements such as transistors and resistors are formed on a semiconductor wafer and which has fuse elements capable of adjusting a resistance value of the resistors by laser trimming, including a resistor correction step of correcting in the particular region of the semiconductor wafer the resistance value of the resistors based on an amount of deviation from a target value of the resistance value of the resistors.

Method of fusing trimming for semiconductor device

A high voltage operating field effect transistor has a substrate and a semiconductor channel formation region disposed in a surface of the substrate. A source region and a drain region are spaced apart from each other with the semiconductor channel formation region disposed between the source region and the drain region. A gate insulating film region is disposed on the semiconductor channel formation region. A resistive gate region is disposed on the gate insulating film region. A source side electrode is disposed on a source region side of the resistive gate region and is operative to receive a signal electric potential. A drain side electrode is disposed on a drain region side of the resistive gate region and is operative to receive a bias electric potential an absolute value of which is equal to or larger than that of a specified electric potential and which changes according to an increase or decrease in a drain electric potential.

Method of high voltage operation of a field effect transistor

A semiconductor device manufacturing method includes a field oxide insulation film forming step, an electrode forming step, and a resistor forming step. The field oxide insulation film forming step comprises forming a field oxide insulation film on a surface of the semiconductor substrate so that a portion which corresponds to a side surface portion for each of active regions formed on the surface of the semiconductor substrate, which opposes a rotation center of the surface of the semiconductor substrate in spin-coating of a photoresist in the electrode forming step, and which is located at a front side of a centrifugal force acting direction along the surface of the semiconductor substrate has a curved surface that is convex in a forward direction of the centrifugal force along the surface of the semiconductor substrate as seen in plan view of the semiconductor substrate.

Semiconductor device manufacturing method with spin-coating of photoresist material

In a method of manufacturing a semiconductor integrated circuit device, a gate electrode is formed over a semiconductor substrate. An insulating film is then formed on the gate electrode and on regions corresponding to a source and a drain of the semiconductor integrated circuit device. The source and the drain are then formed. A nitride film is then selectively formed over the source and the gate electrode via the insulating film so that the nitride film extends over the gate electrode to a position short of a center of the gate electrode in a length direction thereof and so that a width of the nitride film is shorter than a channel width of the semiconductor integrated circuit device.

Growing community of inventors

Chiba, Japan

Jun Osanai