Sony Semiconductor Solutions Corporation

Sony Corporation

Sony Group Corporation

Jun Ogi

Yusuke Oike

Hongbo Zhu

Yoshiaki Tashiro

Susumu Inoue

Junichiro Fujimagari

Yuri Kato

Atsushi Fujiwara

Yorito Sakano

Ryosuke Matsumoto

Atsushi Okuyama

Yasufumi Miyoshi

Keiichi Nakazawa

Takahiro Toyoshima

Yukari Takeya

Atsushi Horiuchi

Masahiro Sato

Takafumi Takatsuka

Kan Shimizu

Naohiko Kimizuka

Kazuki Hizu

Machiko Kametani

Yoshihisa Matoba

Satoru Wakiyama

Kentaro Akiyama

Keita Ishikawa

Takuya Nakamura

Yukio Tagawa

A light-receiving apparatus () includes a counting unit (), a setting unit (), and an acquiring unit (). The counting unit is configured to measure a detection number of times that represents the number of times incidence of a photon to a light-receiving element has been detected within an exposure period and to output a counted value. The setting unit is configured to set a cycle of updating time information in accordance with an elapsed time during the exposure period. The acquiring unit is configured to acquire the time information indicating a time at which the counted value reaches a threshold before the exposure period elapses.

Light-receiving apparatus with cycle setting according to illumination categories for updating luminance value

To achieve decreased noise and improved sensitivity by reducing parasitic capacitance in a charge detection sensor. The charge detection sensor includes a detection element, a detection electrode, and a contact. The detection element is provided on one surface of a semiconductor substrate and detects a charge. The detection electrode is provided on another surface different from the one surface of the semiconductor substrate. The contact penetrates the semiconductor substrate and electrically connects the detection electrode and the detection element. Since no wiring layer is formed between the detection element and the detection electrode, the parasitic capacitance is reduced.

Charge detection sensor and potential measurement system

To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.

Imaging device and signal processing device

There is provided a semiconductor device including: a plurality of bumps on a first semiconductor substrate; and a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.

Semiconductor device and manufacturing method, and electronic appliance

Light-receiving apparatus with cycle setting according to photon count determinations

The present disclosure relates to a semiconductor apparatus and a potential measuring apparatus capable of preventing deterioration in signal characteristics due to parasitic capacitance caused by providing a configuration for realizing an electrode plating process when an electrode and an amplifier are provided on the same substrate. When a power source supplies a potential necessary for plating processing and a breaker reads a signal from liquid, and an amplifier amplifies and outputs the signal, the power source required for the plating processing is blocked with respect to the electrode. This is applicable to the potential measuring apparatus.

Semiconductor apparatus and potential measuring apparatus

A potential measurement device includes a plurality of read-out electrodes arranged in an array shape and that detects a potential at a potential generation point generated due to a chemical change, and a reference electrode that detects a reference potential. The reference electrode is arranged within the array of the read-out electrodes. With this configuration, a low-noise potential measurement device in which noise superimposed on a wire from each of the read-out electrodes to an amplifier and noise superimposed on a wire from the reference electrode to the amplifier, i.e., wiring noise, can be reduced is achieved.

Potential measurement device

The present disclosure relates to a semiconductor apparatus and a potential measuring apparatus capable of preventing electrostatic breakdown in an electrode formation process when an electrode and an amplifier are provided on a same substrate. A diode is provided of which a cathode is connected to a previous stage of an amplifying transistor for amplifying a signal read by a read electrode for reading a potential having contact with liquid in which a specimen is input and an anode is grounded. With such a configuration, by bypassing a negative charge generated between the electrode and the amplifying transistor in the electrode formation process from the diode and discharging the negative charge toward ground so as to prevent electrostatic breakdown. This is applicable to a bioelectric potential measuring apparatus.

Imaging device

There is provided a semiconductor device including: a plurality of bumps () on a first semiconductor substrate (); and a lens material () in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.

The present technology relates to a solid-state imaging device, an imaging apparatus, an electronic apparatus, and a semiconductor device, which can prevent overflow of an underfilling resin filled in a portion adapted to connect the substrate to the flip chip and can prevent secondary damages such as electric short-circuit and contact with processing equipment. By utilizing a molding technology of forming an on-chip lens, a dam is formed in a ring shape or a square shape in a manner surrounding a range where a flip chip is connected via a solder bump on an upper layer of a substrate of the solid-state imaging device and provided in order to form the on-chip lens. This can block the underfilling resin filled in the range where the substrate and the flip chip are electrically connected. The present technology can be applied to a solid-state imaging device.

Solid-state imaging device, imaging apparatus, electronic apparatus, and semiconductor device

Growing community of inventors

Kanagawa, Japan

Jun Ogi