Tokyo Electron Limited

Tokyo Electron Limi Ted

Jun Ogawa

Kazuhide Hasebe

Shigeru Nakajima

Noriaki Fukiage

Hiroaki Ikegawa

Takeshi Oyama

Hiroki Murakami

Hideomi Hane

Kentaro Oshimo

Shimon Otsuki

Takayuki Karakawa

Masahiko Kaminishi

Akihiro Kuribayashi

Takehiko Fujita

Mitsuhiro Okada

Yasuo Kobayashi

Kosuke Takahashi

Toyohiro Kamada

Pao-Hwa Chou

Yu Wamura

Kazuo Yabe

Yoshihiro Ishida

Chaeho Kim

Hiroyuki Wada

Yoshinobu Ise

Hitoshi Kato

Manabu Honma

Jun Sato

Hiroyuki Kikuchi

Mitsuhiro Tachibana

Kohei Fukushima

Akira Shimizu

Toshiki Takahashi

Yusuke Suzuki

Haruhiko Furuya

Masato Koakutsu

Takashi Chiba

Muneyuki Otani

Yu Sasaki

Yoshitaka Enoki

Ren Mukouyama

In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Film deposition apparatus for fine pattern forming

There is provided a method of forming a silicon nitride film on a substrate having first and second films formed thereon, wherein the first film and the second film have different incubation times. The method includes: supplying a processing gas composed of a silicon halide having Si—Si bonds to the substrate; supplying a non-plasmarized second nitriding gas to the substrate; forming a thin silicon nitride layer covering the first film and the second film by repeating the supplying the processing gas and the supplying the second nitriding gas in a sequential order; supplying a plasmarized modifying gas to the substrate and modifying the thin silicon nitride layer; and forming the silicon nitride film on the modified thin silicon nitride layer by supplying the raw material gas and the first nitriding gas to the substrate.

Film forming method and film forming apparatus

A deposition method for embedding a SiN film in a recessed pattern formed on a surface of a substrate includes: (a) activating and supplying a first process gas containing NHto the surface of the substrate and causing NHgroups to adsorb on the surface of the substrate, where x is 1 or 2; (b) supplying a silicon-containing gas to the surface of the substrate on which the NHgroups are adsorbed and causing the silicon-containing gas to adsorb on the NHgroups; and (c) activating and supplying a second process gas containing Nto the surface of the substrate on which the NHgroups are adsorbed and partly replacing the NHgroups with N groups, wherein (a) and (b) are repeated, and (c) is performed every time (a) and (b) are repeated a predetermined number of times.

Deposition method

A film forming apparatus sequentially supplies a raw material gas of a compound containing chlorine and an element other than the chlorine, and a first reaction to form a fil. The film forming apparatus includes a rotary table, a raw material gas ejection port configured to eject the raw material gas to a first region, a reaction gas supply part configured to supply, to a second region, a first reaction gas and a second reaction gas that reacts with chlorine to generate a third reaction product, in order to prevent a second reaction product from being generated due to a reaction of the chlorine remaining in the vacuum container with air when performing the opening-to-air. The film forming apparatus further includes an atmosphere separation part, a first exhaust port and a second exhaust port, and a controller.

Film forming apparatus and method of operating film forming apparatus

A method of forming a silicon nitride film on a substrate having a recess pattern formed in a surface thereof, includes: forming the silicon nitride film in conformity to the surface of the substrate by supplying each of a raw material gas containing silicon and a nitriding gas for nitriding the raw material gas into a processing container in which the substrate is accommodated; shrinking the silicon nitride film such that a thickness thereof is reduced from a bottom side toward an upper side of the recess pattern by supplying a plasmarized shaping gas for shaping the silicon nitride film to the substrate in a state where the supply of the raw material gas containing silicon into the processing container is stopped; and burying the silicon nitride film in the recess pattern by alternately and repeatedly performing the forming the silicon nitride film and the shrinking the silicon nitride film.

Film forming apparatus and film forming method

A film forming method includes: rotating a rotary table to revolve a substrate which is placed on the rotary table and has a recess in its surface; supplying a raw material gas to a first region on the rotary table; supplying an ammonia gas to a second region on the rotary table; forming a first SiN film in the recess by supplying the raw material gas to the first region and supplying the ammonia gas to the second region at a first flow rate, while the rotary table rotates at a first rotation speed; and forming a second SiN film in the recess such that the second SiN film is laminated on the first SiN film by supplying the raw material gas to the first region and supplying the ammonia gas to the second region at a second flow rate, while the rotary table rotates at a second rotation speed.

A method of cleaning a deposition apparatus is provided. The method includes cleaning, with a cleaning gas formed into a plasma, an interior of a processing vessel on which a silicon nitride film is deposited. The cleaning gas includes a fluorine-containing gas and oxygen gas.

Cleaning method of deposition apparatus

A processing method according to one aspect of the present disclosure includes varying pressure of a processing chamber in a state in which a plasma of a purge gas is formed in the processing chamber, the varying including removing a film deposited in the processing chamber, with the formed plasma.

Processing method

A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.

There is provided a substrate processing method, including: forming a silicon nitride film laminated on an etching target film by supplying a film forming gas to a substrate; oxidizing a surface of the silicon nitride film to form an oxide layer by supplying an oxidizing gas to the substrate; and etching the etching target film by supplying an etching gas containing halogen to the substrate, in a state in which the etching target film and the oxide layer are exposed on a surface of the substrate.

Substrate processing method and substrate processing apparatus

There is provided a film formation processing method for forming, in a vacuum atmosphere, a silicon nitride film along an inner wall surface of a recess constituting a pattern formed on a surface of a substrate, which includes: forming the silicon nitride film on the substrate by repeating, plural times, a process of supplying a raw material gas containing silicon to the substrate and subsequently, supplying an ammonia gas to the substrate to generate a silicon nitride on the substrate; and subsequently, modifying the silicon nitride film by activating a hydrogen gas and an ammonia gas and supplying the activated hydrogen gas and the activated ammonia gas to the substrate.

Method of manufacturing semiconductor device and apparatus of manufacturing semiconductor device

Mask pattern forming method, fine pattern forming method, and film deposition apparatus

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Nirasaki, Japan

Jun Ogawa