Globalwafers Japan Co., Ltd.

Jun Nakao

Hironori Banba

Hiromichi Isogai

Takashi Ishikawa

Shingo Narimatsu

Yoshiaki Abe

Hiroyuki Abiko

Michihiro Ohwa

According to one exemplary embodiment, a single crystal pulling-up apparatus of pulling-up silicon single crystals by a Czochralski method, is provided with: a neck diameter measuring portion which measures a diameter of a grown neck portion; a first compensation portion which outputs a first compensated pulling-up speed for the seed crystals based on a difference between a measured value of the diameter of the neck portion and a target value of the neck portion diameter previously stored; a second compensation portion which outputs a second pulling-up speed while limiting an upper limit of the first pulling-up speed to a first limit value; and a crucible rotation number compensation portion which lowers the number of a rotation of a crucible at least in a period where the upper limit of the first pulling-up speed is limited to the first limit value.

Single crystal pulling-up apparatus of pulling-up silicon single crystal and single crystal pulling-up method of pulling-up silicon single crystal

Growing community of inventors

Niigata, Japan

Jun Nakao