Fujitsu Semiconductor Limited

Jun Nagayama

Tomoharu Awaya

Tsuyoshi Koyashiki

Masahito Isoda

An electronic circuit includes: first circuits each including a first FET having a source supplied with at least one of a first voltage and a second voltage; and a second circuits each of which is associated with a respective one of the first circuits, and generates a back bias voltage applied to the first FET so as to change in accordance with a change of at least one of the first and second voltages.

Electronic circuit and semiconductor device

A semiconductor device includes a memory element including a stack structure stacking an insulator film and a metal film or a metal compound film; and a transistor including a gate structure having an identical stack structure as that of the memory element.

Semiconductor device and method of manufacturing the same

In a semiconductor device and a write control circuit, a voltage detection unit detects a write voltage supplied to a storage element (electrical fuse element) in which only single writing is electrically performed and, when the write voltage is equal to or more than a predetermined threshold voltage, allows the write control unit to stop writing to the electrical fuse element regardless of the write signal. The above processing permits the write control circuit to suppress false writing caused by the fact that abnormality occurs in a write voltage and it becomes an overvoltage.

Growing community of inventors

Yokohama, Japan

Jun Nagayama