Kabushiki Kaisha Kobe Seiko Sho

Kobe Steel, Ltd.

Ism Technologies, Inc.

Dainippon Screen Mfg. Co., Ltd.

Jun Munemasa

James R Treglio

Tadashi Kumakiri

Alexander Elkind

Kenji Yamamoto

Kimitsugu Saito

Yoshihiko Sakashita

Yusuke Muraoka

Katsumi Watanabe

Takashi Onishi

Shogo Sarumaru

Tatsuya Tanaka

Tomomi Iwata

Hideo Fujii

Ikuo Mizobata

Hisanori Oshiba

Tetsuya Yoshikawa

Eiji Fukatsu

Tatsuya Yasunaga

Hiroyuki Ueno

Takashi Gama

Yoshiro Iwai

Yasuo Okuyama

Noriyuki Inuishi

Kouichirou Akari

A member covered with a hard coating according to the present invention has a hard coating which has excellent erosion resistance, a hardness (H) of 20 GPa or more as measured using a nano indenter and a ratio of the hardness (H) to a Young's modulus (E) (i.e., H/E) of 0.06 or more, and comprises Ti and/or Cr, Al and N, wherein the total amount of Ti and Cr relative to the total amount of elements other than non-metal elements in the coating is 0.1 to 0.6 inclusive in terms of atomic ratio and the amount of Al relative to the total amount of the elements other than the non-metal elements in the coating is 0.4 to 0.7 inclusive in terms of atomic ratio.

Member covered with hard coating

After subjected to a developing process, a rinsing process and a replacing process in this order in a developing unitA,B, a substrate W wet with an anti-drying solution is wet-transported to a supercritical drying unitby a primary transport robot. The supercritical drying unitperforms a high-pressure drying process (supercritical drying process) in a dedicated manner. Accordingly, by virtue of the presence of the anti-drying solution, the substrate W is effectively prevented from becoming air-dry during the transportation of the substrate W.

Substrate processing method, substrate processing apparatus and substrate processing system

Cu-based interconnections are fabricated in a semiconductor device by depositing a thin film of Cu or Cu alloy on a dielectric film by sputtering, the dielectric film having trenches and/or via holes at least one groove and being arranged on or above a substrate, and carrying out high temperature and high pressure treatment to thereby embed the Cu or Cu alloy into the trenches and/or via holes, in which the sputtering is carried out at a substrate temperature of &#x2212;20&#xb0; C. to 0&#xb0; C. using, as a sputtering gas, a gaseous mixture containing hydrogen gas and an inert gas in a ratio in percentage of 5:95 to 20:80.

Method for fabricating copper-based interconnections for semiconductor device

When a trigger discharge between a metal cathode and a trigger ring induces a vacuum-arc discharge between the cathode an anode, which vaporizes the substances of the cathode surface to produce a metal ion plasma, setting the pulse length of the arc pulse applied between the cathode and the anode to 1 msec or longer will soon short-circuit between the cathode and the trigger ring due to the vaporized substances deposited on the surface of the insulating ring. In order to solve this problem, a permanent magnet 36 for forming a magnetic field across a space between the anode 26 and the cathode 34 is provided close to the rear side of the trigger ring 35 so as to guide the substances vaporized from the cathode 34 toward the anode 26. Thereby, a longer continuous operation can be done with setting the arc pulse longer. moreover, since the permanent magnet 36 is provided at the foregoing position, the magnet does not receive a thermal load by the vacuum-arc discharge, which maintains a stable operation and makes the total construction compact.

Metal ion plasma generator having magnetic field forming device located

In an apparatus in which a vacuum-arc discharge is generated between a metal cathode and anode plate and an evaporated substance from the cathode is supplied through openings on the anode plate, conventionally, a cleaning work to remove metal films deposited on the edges of the openings has to be done periodically, which limits continuous operation. The apparatus relating to the invention is provided with a rotary anode plate 14 on which a plurality of openings 17 are formed on a circumference concentric with the rotary axis of the anode plate. As the anode plate 14 rotates, the openings 17 are designed to come into a position to face the cathode. This construction can continue a longer operation with an extremely low deterioration of the performance without a maintenance work requiring a relief of the vacuum.

Metal ion plasma generator having rotatable anode plate

An ion implantation apparatus is intended to perform the ion implantation for the desired surface of a target irrespective of the surface geometry thereof, and to simplify the structure. The apparatus includes a vacuum chamber, and a plurality of arc ion sources for emitting ion beams on the surface of the target disposed within the vacuum chamber. A plurality of arc ion source mounting openings are formed on the vacuum chamber. One or more of arc ion sources necessary for emitting ion beams on the desired surface of the target are airtightly mounted on the openings opposed to the above surface.

Ion implantation apparatus

A cathodic arc deposition system includes a cathode made of a film forming material, a shield surrounding a circumferential side of the cathode with a gap, a vacuum chamber having the cathode and the shield therein, and a substrate to have deposited at a surface thereof an ionized film forming material by generating an arc discharge between the cathode and the anode. Either the cathode or the shield is adjusted in height so as to keep the upper edge of the shield at substantially the same vertical level as the upper edge of the cathode.

Cathodic arc deposition system

Growing community of inventors

Takasago, Japan

Jun Munemasa