Kabushiki Kaisha Toshiba

Kabushiki Kaishi Toshiba

Jun Monma

Kazuo Kimura

Fumio Ueno

Akihiro Horiguchi

Hironori Asai

Mitsuo Kasori

Hiroyasu Sumino

Katsuyoshi Oh-Ishi

Koji Yamakawa

Keiichi Yano

Mitsuyoshi Endo

Hirohisa Osoguchi

A semiconductor chip is supported on a tape carrier provided with lead wirings. The semiconductor chip is electrically connected to the lead wirings. The semiconductor chip of this quality is bonded in combination with the pe carrier to an aluminum nitride substrate. The lead wirings provided on the carrier combine the two functions as an internal lead and an external lead. The semiconductor package of such a structure as is described above allows multi-terminal connection by the narrowing of pitches between the leads and permits provision of a miniature package excelling in the heat-radiating property. Alternatively, the lead wirings supported on the tape carrier and electrically connected to the semiconductor chip are utilized as internal leads. For the external leads, such lead frames as are bonded to the aluminum nitride substrate are used. The lead frames are electrically connected to the internal leads provided in the tape carrier.

Semiconductor device having a tab chip on a tape carrier with lead

This invention provides an aluminum nitride wiring substrate in which a wiring metal layer for forming a signal wiring layer is densified to micropattern a signal wiring portion of an aluminum nitride package incorporating a semiconductor element therein and to increase the signal processing speed of the semiconductor element itself, the electric resistance of the wiring metal layer is reduced while keeping high thermal conductivity and insulating characteristics inherent in the aluminum nitride material to make it possible to mount a high-speed and high-output semiconductor element, and the wiring metal layer is prevented from defective wire continuity, odd appearance, or etc, and a method for the production thereof. In an aluminum nitride wiring substrate comprising an aluminum nitride substrate and a wiring metal layer provided in at least either of the surface and the interior of the aluminum nitride substrate and formed by sintering the aluminum nitride wiring substrate and the wiring metal layer, the wiring metal layer contains manganese and at least one selected from the group consisting of copper, silver, a copper alloy, and a silver alloy.

Aluminum nitride wiring substrate and method for production thereof

A formed aluminum nitride piece is produced by applying a wiring layer-forming metal paste containing such a high melting temperature metal (wiring metal) as tungsten, for example, to an aluminum nitride green sheet and shaping one layer of the aluminum nitride green sheet now bearing the applied metal paste or superposing a plurality of such layers. In this case, a manganese component destined to densify tungsten is incorporated in at least either of the green sheet and the wiring layer-forming metal paste. The manganese component is either manganese as a simple metallic element or such a manganese compound as manganese oxide. Then, the formed aluminum nitride piece is fired to effect simultaneous sintering of an aluminum nitride and tungsten. Owing to the preparatory addition of the manganese component, a complex compound such as a complex oxide containing manganese and tungsten or a complex such as a eutectic alloy of manganese and tungsten is formed in the wiring metal layer. The wiring metal layer contains manganese at a ratio of not more than 2% by weight in addition to tungsten. Since the complex accelerates the granular growth of tungsten, a tungsten layer (wiring metal layer) densified to an extent of lowering the porosity thereof below 2% is obtained.

Aluminum nitride wiring substrate

Disclosed is a sintered aluminum nitride composition and a circuit substrate for use in semiconductor device. The sintered aluminum nitride composition comprises: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of alkaline earth elements and group IIIa elements of the periodic table; a second component made of either a simple silicon or a silicon-containig compound; and a third component made of either a simple manganese or a manganese-containing compound. The circuit substrate has an insulating layer which is compoesd of the above-described sintered aluminum nitride composition, and an electrically conductive layer containing an electrically conductive material and the same components as those of the insulating layer.

Sintered aluminum nitride and circuit substrate using sintered aluminum

Disclosed is a circuit substrate and a semiconductor device to which the circuit substrate is applied. The circuit substrate has an insulating layer and an electrically conductive layer. The insulating layer is composed of a sintered aluminum nitride composition containing: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of group IIa elements and group IIIa elements of the periodic table; a second component given by either a simple boron or a boron compound; and a third component give by either a simple manganese or a manganese compound. The electrically conductive layer contains: a conductive component given by a metal or an electrically conductive compound for exhibiting electric conductivity; aluminum nitride; the first component; the second component; and the third component. The semiconductor device has the above circuit substrate, a semiconductor element mounted on the circuit substrate, and a cap being tightly bonded to the circuit substrate with a sealing glass to cover the semiconductor element.

Growing community of inventors

Yokohama, Japan

Jun Monma