Kabushiki Kaisha Toshiba

Toshiba Materials Co., Ltd.

Jun Momma

Katsuyuki Aoki

Satoshi Takahashi

Hiroyuki Hasebe

Masahiro Sekino

Takayuki Fukasawa

Takashi Sano

Asako Satoh

Masayuki Oguchi

Kentaro Iwai

Makoto Kato

Yukihiro Shibata

Akiko Saito

Hiroshi Endo

Noriaki Yagi

Katsumi Hisano

Naoya Hayamizu

Hideo Iwasaki

Kaoru Koiwa

Tomiya Sasaki

Naoyuki Sori

Hiromi Shizu

Kazumi Shimotori

Hideo Oota

Asako Sato

Masashi Fujiwara

Toshiya Sakamoto

Yoshinori Fujimori

Asako Lions-Mansion-Namamugiminami Satoh

Masayuki 202 Dai-2-Suzuran-Heights Oguchi

In a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, dislocation defect portions exists inside at least some of the silicon nitride crystal grains. A percentage of a number of the at least some of the silicon nitride crystal grains among any 50 of the silicon nitride crystal grains having completely visible contours in any cross section or surface of the silicon nitride sintered body is not less than 50% and not more than 100%. It is favorable that a plate thickness of the silicon nitride substrate, in which the silicon nitride sintered body is used, is within the range not less than 0.1 mm and not more than 0.4 mm. The TCT characteristics can be improved by using the silicon nitride substrate in the silicon nitride circuit board.

Silicon nitride sintered body, silicon nitride substrate, and silicon nitride circuit board

A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value &#x3b5;of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value &#x3b5;of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |&#x3b5;&#x2212;&#x3b5;|&#x2264;0.1.

Sintered body, substrate, circuit board, and manufacturing method of sintered boy

Sintered body, substrate, circuit board, and manufacturing method of sintered body

In a silicon nitride substrate including a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, a plate thickness of the silicon nitride substrate is 0.4 mm or les, and a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains in a 50 &#x3bc;m&#xd7;50 &#x3bc;m observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 20%. Etching resistance can be increased when forming the circuit board.

Silicon nitride substrate and silicon nitride circuit board

A polyelectrolyte material includes as a main chain: a benzene ring; an ether; and a carbonyl group. A part of the benzene ring is sulfonated. A method for manufacturing a polyelectrolyte material includes: synthesizing disulfonyl difluorobenzophenone; and polymerizing the disulfonyl difluorobenzophenone, 4,4'-difluorobenzophenone, and phenolphthalein with a crown ether as a catalyst. The synthesizing is performed by reacting 4,4&#x2032;-difluorobenzophenone with fuming sulfuric acid, performing salting-out the reaction product, and recrystallizing the salting-out product.

Polyelectrolyte material, method for producing polyelectrolyte material, polyelectrolyte component, fuel cell, and method for producing fuel cell

The present invention provide a nonaqueous electrolyte comprising a nonaqueous solvent, wherein the nonaqueous solvent includes ethylene carbonate (EC), propylene carbonate (PC), &#x3b3;-butyrolactone (GBL) and a fourth component that is a solvent other than the EC, the PC and the GBL, and the nonaqueous solvent satisfies the following equations (1) to (4): where, the x is a ratio (volume %) of ethylene carbonate to a total volume of the nonaqueous solvent, the y is a ratio (volume %) of propylene carbonate to the total volume of the nonaqueous solvent, the z is a ratio (volume %) of &#x3b3;-butyrolactone to the total volume of the nonaqueous solvent, and the p is a ratio (volume %) of the fourth component to the total volume of the nonaqueous solvent.

Nonaqueous electrolyte and nonaqueous electrolyte secondary battery

The display unit comprises a display device such as liquid crystal cell or the like; and a secondary battery disposed to a rear side of the display device. A heat shielding layer having a thermal conductivity of at most 5 W/mK, preferably at most 1 W/mK is formed as a heat shielding plate between the display device and the secondary battery, and the display device and the secondary battery are integrally assembled to form a module structure. According to the above structure of the present invention, since the display device such as liquid crystal cell or the like and the secondary battery are integrally assembled to form a module structure, the display unit can be made compact and thin to attain a light weight.

Display unit and mobile apparatus using the unit

Disclosed is a nonaqueous electrolyte comprising a nonaqueous solvent which contains ethylene carbonate (EC), propylene carbonate (PC), &ggr;-butyrolactone (BL), and a fourth component, which is a solvent other than the EC, PC and BL, and the mixing ratio x (% by volume) of EC based on the total amount of the nonaqueous solvent falls within a range of between 15 and 50, the mixing ratio y (% by volume) of PC based on the total amount of the nonaqueous solvent falls within a range of between 2 and 35, the mixing ratio z (% by volume) of BL based on the total amount of the nonaqueous solvent falls within a range of between 30 and 85, and the mixing ratio p (% by volume) of the fourth component based on the total amount of the nonaqueous solvent is larger than 0 and is not larger than 5.

Thermal conductivity sheet

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Yokohama, Japan

Jun Momma