Samsung Electronics Co., Ltd.

Seoul National University

Other

Global Frontier Center for Multiscale Energy Systems

Jun Mo Park

Soo Young Park

Won Sik Yoon

Dong Won Kim

Ju Youn Kim

Sang Min Yoo

Hyung Joo Na

Kyung Tae Kim

Han-gyoo Kim

Eui Chul Hwang

Bum Gyu Park

Eui Chui Hwang

Lak-Kyung Jung

Han Kyu Lim

Yeon Ho Park

Dae Hyun Cho

Wang Seop Lim

Il-gu Hong

Jung Kyun Ahn

Dae Yeong Lee

There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor device including an active pattern extending in a first direction, a gate structure on the active pattern, the gate structure extending in a second direction different from the first direction and including a gate insulating layer and a gate filling layer, a gate spacer extending in the second direction, on a sidewall of the gate structure, a gate shield insulating pattern on a sidewall of the gate spacer, covering an upper surface of the gate insulating layer, and including an insulating material, and a gate capping pattern covering an upper surface of the gate filling layer, on the gate structure may be provided.

Semiconductor device and method of fabricating the same

The present invention relates to a polymer, an organic solar cell comprising the polymer, and a perovskite solar cell comprising the polymer. The polymer according to the present invention has excellent absorption ability for visible light and an energy level suitable for the use as an electron donor compound in a photo-active layer of the organic solar cell, thereby increasing the light conversion efficiency of the organic solar cell. In addition, the polymer according to the present invention has high hole mobility, and is used as a compound for a hole transport layer, and thus can improve efficiency and service life of the perovskite solar cell without an additive.

Polymer, organic solar cell comprising polymer, perovskite solar cell comprising polymer

Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include a substrate including first and second regions, first active fins extending in a first direction on the first region, second active fins extending parallel to the first active fins on the second region, and single diffusion break regions between two first active fins. Single diffusion break regions may be spaced apart from each other in the first direction. The semiconductor devices may also include a lower diffusion break region between two second active fins and extending in a second direction that is different from the first direction and upper diffusion break regions on the lower diffusion break region. The upper diffusion break regions may be spaced apart from each other in the first direction, and each of the upper diffusion break regions may overlap the lower diffusion break region.

Semiconductor devices including diffusion break regions

A computing system includes an ISA identifier to identify an ISA (Instruction Set Architecture) of a task; a core selector to select a core having a highest power-performance efficiency among a plurality of cores based on the identified ISA; and a task allocator to allocate the task to the selected core.

Computing system and method for operating computing system

An electronic device employing an efficient network protocol stack. The protocol stack comprises a network-level protocol layer configured to provide a transmission service for transferring data to and from a computer network, and a device-level protocol layer configured to send and receive information specific to an interface of the electronic device over the network via the transmission service of the network-level protocol layer. Alternately, each of the network-level protocol layer and the device-level protocol layer may be employed individually with other network protocol layers to construct a functioning network protocol stack.

Low-level communication layers and device employing same

Growing community of inventors

Seoul, South Korea

Jun Mo Park