Marvell International Limited

Marvellworld Trade Ltd.

Jun Ming

Lawrence Tse

Randy Tsang

Zhendong Guo

An inverter cell for a ring oscillator. The inverter cell includes a first transistor, a second transistor, a first resistor, a second resistor, and a capacitor. A voltage input terminal is connected to gates of the first transistor and the second transistor. A voltage output terminal is connected drains of the first transistor and the second transistor. The first resistor is connected to the source of the first transistor and a first voltage potential. The second resistor is connected to the source of the second transistor and a second voltage potential. The capacitor has a first end directly connected to the source of the first transistor and the first end of the first resistor and a second end directly connected to the source of the second transistor and the first end of the second resistor.

Inverter cell for a ring oscillator

Disclosed is an inverter cell design comprising first and second transistors and first and second resistors. In disclosed embodiments, the first resistor is connected to a source of the first transistor and the second resistor is connected to a source of the second transistor. The first and second resistors are configured for connection to respective first and second voltage potentials. The inverter cells may be configured in a ring oscillator. A crystal oscillator may comprise an inverter cell according to the present disclosure.

Low noise CMOS ring oscillator

A charge pump comprises a limit swing generator that receives an input signal and that generates a drive signal based on the input signal. A charge pump core includes output switches that generate a charge pump output in response to the drive signal. The drive signal includes a voltage level. The limit swing generator includes at least one voltage generator to control the voltage level of the drive signal such that the drive signal tracks a parametric variable of the output switches.

Limit swing charge pump and method thereof

A charge pump comprising a charge pump core including output switches. The charge pump core, in response to a drive signal, to generate a charge pump output. A limit swing generator, in response to an input signal, to generate the drive signal to control the charge pump core. The drive signal having voltage levels including a high level and a low level. The limit swing generator including at least one voltage generator to control the voltage levels of the drive signal such that the drive signal tracks a process variable of the output switches. The at least one voltage generator including at least one diode or diode connected device.

A charge pump comprising a charge pump core including output switches. The charge pump core, in response to a drive signal, to generate a charge pump output. A limit swing generator, in response to an input signal, to generate the drive signal to control the charge pump core. The drive signal having voltage levels including a high level and a low level. The limit swing generator including at least one voltage generator to control the voltage levels of the drive signal such that the drive signal tracks a process variable of the output switches.

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Fremont, CA, United States of America

Jun Ming