Chinese Academy of Sciences

Beijing Normal University

Huazhong University of Science and Technology

Yunding Network Technology (beijing) Co., Ltd.

Beijing Baidu Netcom Science and Technology Co., Ltd.

Utopus Insights, Inc.

Beijing Kingsoft Cloud Network Technology Co., Ltd.

Beijing Kingsoft Cloud Technology Co., Ltd.

Beijing Jinxun Ruibo Network Technology Co., Ltd.

Guangxin Ion Beam Technology Co., Ltd.

Wenli (guangdong) Technology Co., Ltd.

Pixel Biotech (shanghai) Co., Ltd.

Guangdong Guangxin Ion Beam Technology Co., Ltd.

Jun Luo

Chao Zhao

Huilong Zhu

Huicai Zhong

Meiyin Yang

Jing Min Xu

Chunlong Li

Xu Zhang

Junfeng Li

Lin Chen

Yan Cui

Xiaoping Ouyang

Pan Pang

Xianying Wu

Minju Ying

Bin Liao

Zhijiong Luo

Haizhou Yin

Qingqing Liang

Dapeng Chen

Wenwu Wang

Huaxiang Yin

Fei Zhao

Yongliang Li

Guilei Wang

Jian Deng

Fuyao Sun

Xiaohong Cheng

Xiao Ouyang

Guoliang Wang

Tengzhi Yang

Wen Jun Yin

Tao Yang

Jin Dong

Qi Ming Tian

Tianchun Ye

Tao Jia

Miao Xu

Xin Jie Lv

Hai Rong Lv

Qiang Xu

Honggang Liu

Xianping Sun

Sumei Wang

Xiangdong Liu

Guangyu He

Yanru Li

Zebing Zhou

Yanzheng Bai

Shuchao Wu

Hongyin Li

Chengjun Huang

Qingsong Hua

Ran Han

Hua Lin

Weifeng He

Hongxian Du

Mingsheng Zhan

Jing Xu

Anlan Chen

Interior part of smart door lock

A semiconductor device and a method for manufacturing the same. The semiconductor device includes: a first gate-all-around (GAA) transistor disposed in the first region, including a first nanowire or nanosheet of at least one first layer, the at least one first layer and the substrate form a first group, among which all pairs of adjacent layers are separated by first distances, respectively; and a second GAA transistor disposed in the second region, including a second nanowire or nanosheet of at least two second layers, the at least two second layers and the substrate form a second group, among which the second layers are separated by second distances, respectively; where a minimum first distance is greater than a maximum second distance, and a quantity of the at least one first layer is less than a quantity of the at least two second layers.

Semiconductor device and method for manufacturing the same

A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes: a substrate and a channel portion. The channel portion includes a first portion including a fin-shaped structure protruding with respect to the substrate and a second portion located above the first portion and spaced apart from the first portion. The second portion includes one or more nanowires or nanosheets spaced apart from each other. Source/drain portions are arranged on two opposite sides of the channel portion in a first direction and in contact with the channel portion. A gate stack extends on the substrate in a second direction intersecting with the first direction, so as to intersect with the channel portion.

Semiconductor device having high driving capability and steep subthreshold swing (SS) characteristic and method of manufacturing the same

The present application discloses a spin Hall device, a method for obtaining a Hall voltage, and a max pooling method. The spin Hall device includes a cobalt ferroboron layer. A top view and a bottom view of the spin Hall device are completely the same as a cross-shaped graph that has two axes of symmetry perpendicular to each other and equally divided by each other. The spin Hall device of the present application has non-volatility and analog polymorphic characteristics, can be used for obtaining a Hall voltage and applied to various circuits, is simple in structure and small in size, can save on-chip resources, and can meet computation requirements.

Spin hall device, method for obtaining hall voltage, and max pooling method

An in-memory computing circuit having reconfigurable logic, including: an input stage and N output stages which are cascaded. The input stage includes 2STT-MTJs. Each output stage includes STT-MTJs, of which a quantity is equal to a half of a quantity of STT-MTJs in a just previous stage. Two STT-MTJs in the previous stage and one STT-MTJ in the subsequent stage form a double-input single-output in-memory computing unit. Each double-input single-output in-memory computing unit can implement the four logical operations, i.e., NAND, NOR, AND, and OR, under different configurations. Data storage and logical operations can be realized under the same circuit architecture, and reconfigurations among different logic can be achieved.

In-memory computing unit and in-memory computing circuit having reconfigurable logic

Exterior part of a smart door lock

The present application discloses a surface treatment method of a polymer for 5G, belonging to the technical field of surface treatment of polymer. By injecting and adding the oxygen elements to the polymer, the polymer matrix elements and the injected atoms can form a blend structure, which can increase the surface roughness of the polymer, improve its bonding strength with the metal, and thus enhance its anti-peel strength. The surface treatment method of the application has the surface resistivity, surface roughness, water absorption and tensile properties of the polymer all considered. The equipment used in the invention has long service life and low cost, and can realize large-scale roll-to-roll production. The method can be popularized in polymer surface treatment.

Surface treatment method of a polymer for 5G

The present disclosure provides a storage unit, a data writing method and a data reading method thereof, a memory and an electronic device. The storage unit includes a semiconductor substrate, a first insulating medium layer, a ferroelectric thin film layer, a bottom electrode, a tunnel junction, a first metal interconnection portion, a second metal interconnection portion, a third metal interconnection portion and a fourth metal interconnection portion. The first insulating medium layer is formed on the semiconductor substrate, the ferroelectric thin film layer is disposed on the first insulating medium layer, the bottom electrode is formed on the ferroelectric thin film layer, and the tunnel junction is formed on the bottom electrode. The first metal interconnection portion is connected to a first end of the bottom electrode, and the third metal interconnection portion is connected to a second end of the bottom electrode. The second metal interconnection portion is connected to the ferroelectric thin film layer, and the fourth metal interconnection portion is connected to the tunnel junction. As compared with the prior art, the present disclosure can control a directional flipping of the magnetic moment in the tunnel junction based on the ferroelectric thin film layer provided. Based on the structural design of the storage unit, the present disclosure does not require an external magnetic field, and fully meets the requirement of high integration of the device.

Voltage control of SOT-MRAM for deterministic writing

The present invention discloses an ion beam lithography method based on an ion beam lithography system. The ion beam lithography system includes a roll-roll printer placed in a vacuum, and a medium-high-energy wide-range ion source, a medium-low-energy wide-range ion source and a low-energy ion source installed on the roll-roll printer. The ion beam lithography method includes: first coating a polyimide (PI) substrate with a dry film, etching the dry film according to a preset circuit pattern, then using the ion beam lithography system to deposit a wide-energy-range metal ion on the circuit pattern to form a film substrate, and finally stripping the dry film off the film substrate to obtain a printed circuit board (PCB).

Ion beam lithography method based on ion beam lithography system

The present application provides a method, a cluster system, an electronic device for operating a device, and a readable storage medium, involving the technical field of clusters. Sequential data operations on the communication device is implemented through the cooperation between the first cluster and the second cluster. The first nodes in the first cluster compete for the first distributed lock to implement sequential storage of the data operation requests. The second nodes in the second cluster compete for the second distributed lock to obtain the stored data operation requests sequentially, and complete the data operations on the target communication device.

Equipment control method, cluster system , electronic device and readable storage medium

The disclosure provides a metal ion source emitting device comprising a ceramic chamber, a leading-out electrode chamber and three cathodes hermetically connected, a trigger electrode fixed on a ceramic insulating element, a cathode target material fixed on an indirect cooling channel, a limiting element fixed on a fixed element, the fixed element fixing the indirect cooling channel on a cathode cooling pipe, the cathode cooling pipe fixed on a cathode flange, a trigger binding post connected with the trigger electrode, a leading-out electrode and an accelerating electrode arranged right below a cathode in the leading-out electrode chamber, and leading-out slits formed on the accelerating electrode and the leading-out electrode. According to the emitting device, three cathodes can operate simultaneously with only one anode, increasing irradiation area of an ion source, and improving the operating efficiency and energy utilization rate, with a more compact emitting source and larger processing area.

Metal ion source emitting device

The present disclosure discloses a vertical superconducting magnetic mass-spring oscillator with an adjustable natural frequency, comprising: a proof mass, a negative-stiffness superconducting coil and a positive-stiffness superconducting coil; the negative-stiffness superconducting coil is mounted at an opening of a semi-closed space of the proof mass, so that a part of magnetic lines of the negative-stiffness superconducting coil are in a compressed state in a closed space of the proof mass, and the other part of the magnetic lines of the negative-stiffness superconducting coil are in an expanded state outside the closed space of the proof mass; a vertical magnetic repulsive force applied to the proof mass by the negative-stiffness superconducting coil varies with a displacement of the proof mass from an equilibrium position, with the variation magnitude proportional to the displacement and the variation direction the same as the displacement direction; and the positive-stiffness superconducting coil is mounted in the semi-closed space of the proof mass, and a vertical magnetic repulsive force applied to the proof mass by the positive-stiffness superconducting coil varies proportionally to the displacement of the proof mass from the equilibrium position, with the variation direction opposite to the displacement direction. The present disclosure realizes that the natural frequency of the superconducting mass-spring oscillator is adjustable, and meanwhile, the cross-coupling effect of horizontal and vertical degrees of freedom of the proof mass can be reduced.

Vertical superconducting magnetic mass-spring oscillator with adjustable natural frequency

The present invention discloses a magnetic filter tube, and relates to the technical field of magnetic filters. The magnetic filter tube includes a first rectangular tube and a second rectangular tube, where one end of the first rectangular tube is fixedly connected to one end of the second rectangular tube; the other end of the first rectangular tube forms an inlet of the magnetic filter tube; the inlet of the magnetic filter tube is connected with a cathode target flange; the other end of the second rectangular tube forms an outlet of the magnetic filter tube; the outlet of the magnetic filter tube is connected with a vacuum chamber; an inner wall of the first rectangular tube and an inner wall of the second rectangular tube are each provided with a protrusion and a groove; the protrusion is filled with cold water.

Magnetic filter tube

A multi-state memory and a method for manufacturing the same. A magnetoresistive tunnel junction is disposed on a spin-orbit coupling layer, and thermal annealing is performed after dopant ions are injected from a side of the magnetoresistive tunnel junction. The concentration of dopant ions in the magnetoresistive tunnel junction has a gradient variation along the direction that is perpendicular to the direction of the current and within the plane in which the spin-orbit coupling layer is located. Symmetry along the direction perpendicular to the direction of the current is broken. In a case a current flows into the spin-orbit coupling layer, resistance are outputted in multiple states in linearity with the current. The multi-state storage is achieved. It can meet a requirement on hardware of neural network synapses, and is applicable to calculation in a neural network.

Multi-state memory and method for manufacturing the same

A magnetoresistive random access memory and a method for manufacturing the same are provided, with which a stress layer covers a part of the protective layer along a direction of a current in the spin-orbit coupling layer, so that a stress is generated on the part of the magnetic layer locally due to the stress layer, thus a lateral asymmetric structure is formed in a direction perpendicular to the current source. In a case that a current is supplied to the spin-orbit coupling layer, the spin-orbit coupling effect in the magnetic layer is asymmetric due to the stress on the part of the magnetic layer, thereby realizing a deterministic switching of the magnetic moment under the function of the stress.

Magnetoresistive random access memory and method for manufacturing the same

Growing community of inventors

Beijing, China

Jun Luo