National Institute for Materials Science

Samsung Electronics Co., Ltd.

Jun Liu

Kazuhiro Hono

Hiroaki Sukegawa

Seiji Mitani

Yuya Sakuraba

Hwachol Lee

Jiamin Chen

Shigeki Takahashi

Yoshiaki Sonobe

Kwangseok Kim

Tadakatsu Ohkubo

Shinya Kasai

To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate, a base layerhaving a B2 structure laminated on the silicon substrate, a first non-magnetic layerlaminated on the base layerhaving a B2 structure, and a giant magnetoresistance effect layerhaving at least one laminate layer including a lower ferromagnetic layer, an upper ferromagnetic layer, and a second non-magnetic layerdisposed between the lower ferromagnetic layerand the upper ferromagnetic layer

Monocrystalline magneto resistance element, method for producing the same and method for using same

Embodiments of the inventive concepts provide a flat perpendicular magnetic layer having a low saturation magnetization and a perpendicular magnetization-type tunnel magnetoresistive element using the same. The perpendicular magnetic layer is a nitrogen-poor (MnGa)Nlayer (0&#x3c;x&#x2264;0.5 and 0&#x3c;y&#x3c;0.1) formed by providing nitrogen (N) into a MnGa alloy while adjusting a nitrogen amount. The perpendicular magnetic layer can be formed flat.

Perpendicular magnetic layer and magnetic device including the same

Provided is a structure having a perpendicular magnetization film which is an (MnGa)N(0&#x3c;x&#x2266;0.5, 0&#x3c;y&#x3c;1) thin film having a nitrogen-deficient composition which is formed by controlling and introducing nitrogen N into an MnGa alloy or a thin film containing at least one of Ge, Zn, Sb, Ni, Ag, Sn, Pt, and Rh, instead of Ga. The perpendicular magnetization film exhibits a Curie temperature sufficiently higher than room temperature, has saturation magnetization smaller than that of existing materials, and is capable of being fabricated as a very flat film.

Perpendicular magnetization film, perpendicular magnetization film structure, magnetoresistance element, and perpendicular magnetic recording medium

Growing community of inventors

Tsukuba, Japan

Jun Liu