Canon Kabushiki Kaisha

Omnivision Technologies, Inc.

Sony Corporation

Hefei Vdi Corporation

Jun Liu

Christopher J Spindt

William J Cummings

Andrew R Coker

Hervé Soulard

James C Dunphy

Datong Chen

Duane A Haven

Michael James Nystrom

Christopher J Curtin

Ronald L Hansen

George B Hopple

Lawrence S Pan

David R Morris

Igor L Maslennikov

Randolph S Gluck

Tai-Ching Shyu

Tomoo Kosugi

Peter Vincent Wyatt

Lee Cressi

Shiyou Pei

Abhijit Mandal

Matthew Scott Dalton

Colin Stanners

An electrochromic structure includes: a substrate including a first surface and a second surface opposite to the first surface; a first conductive layer located on the first surface; a color changing functional layer located on a surface of the first conductive layer; a second conductive layer located on a surface of the color changing functional layer, where the second conductive layer is divided into a first isolation region and a first conductive region which are electrically isolated; a first electrode located in the first isolation region, where the first electrode penetrates the color changing functional layer and is electrically connected to the first conductive layer; a second electrode located on a surface of and electrically connected to the second conductive layer in the first conductive region; and a first light shielding layer for shielding the first isolation region.

Electrochromic structure and method of forming same

A method of tessellating a parametric patch () of an object is disclosed. A boundary curve associated with the parametric patch () is vectorized according to a pre-determined flatness tolerance. A tessellation point associated with a first parametric value inside the parametric patch () is determined based on geometry of the parametric patch () and a tessellation step. A curve associated with the first parametric value is determined based on the geometry of the parametric patch () and the tessellation step. A color split point on the vectorized boundary curve is determined. The color split point is determined based on the vectorized boundary curve and the determined curve associated with the first parametric value. The parametric patch () is tessellated by joining the color split point and the tessellation point.

Method, apparatus and system for tessellating a parametric patch

A method of rendering a parametric patch. The patch is defined by a geometry and a color varying according to a surface mapping points of the patch to intermediate values. Each of the intermediate values is mapped to a color value according to a shading color function. A set of intermediate values is determined for the patch. The determined set of intermediate values represent an approximation of the shading color function by linear segments. The patch is tessellated into a plurality of cells. Tessellation points are determined for each of the plurality of cells according to the determined set of intermediate values. A further cell is formed for the patch by joining, within each of said plurality of cells, a plurality of the tessellation points being of equal intermediate value and approximating isolines of the surface. The patch is rendered using the intermediate values.

Method, system and apparatus for rendering

A method is disclosed where an initial placement of a watermark annotation on an output medium associated with a page and placement of an area of the page, is determined. The determined initial placement is relative to the output medium and independent of the placement of the area of the page. The initial placement of the watermark annotation is adjusted so that the watermark annotation at least partially overlaps the area of the page.

Method, system and apparatus for determining position of a watermark annotation

A light-emitting device contains getter material () typically distributed in a relatively uniform manner across the device's active light-emitting portion. An electron-emitting device similarly contains getter material (, and) typically distributed relatively uniformly across the active electron-emitting portion of the device.

Light-emitting and electron-emitting devices having getter regions

An improved charge amplifier ( ) for use in a MOS imaging array is disclosed. The charge amplifier comprises a reference capacitor (C ), a sense capacitor (C ), an operational amplifier ( ), a first output capacitor (C ) connected to the output of the operational amplifier, a second output capacitor (C ) connected to the output of the operational amplifier, and a differential amplifier ( ) connected to the first output capacitor and said second output capacitor. In operation, the reference capacitor is charged to a reference voltage. Similarly, the sense capacitor is charged to a reference voltage. Both the sense capacitor and the reference capacitor are formed to be identical. However, the reference capacitor is covered from ambient light and the sense capacitor is exposed to ambient light. As ambient light is incident on the sense capacitor, the voltage carried by the sense capacitor diminishes. After a predetermined exposure time, both the voltage stored across the reference capacitor and the sense capacitor is amplified by the operational amplifier. Next, the differential amplifier operates to provide an output signal that is the difference between said amplified version of said reference voltage and said amplified version of said signal voltage.

Charge amplifier for MOS imaging array

A charge amplifier with DC offset canceling for use in a pixel element of an MOS image sensor is disclosed. The charge amplifier can be manufactured using a standard CMOS single polycrystalline process, making it much more cost effective than prior art designs. The charge amplifier includes an operational amplifier, a source capacitor, a series capacitor, and a feedback capacitor. The source capacitor holds the input signal. The output of the operational amplifier provides the output signal. Switches control the routing of the signal flow from the source capacitor, the series capacitor, and the feedback capacitor.

Charge amplifier for MOS imaging array and method of making same

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Fremont, CA, United States of America

Jun Liu