Winbond Electronics Corporation

Taiwan Semiconductor Manufacturing Comp. Ltd.

Jun-Lin Yeh

Chi-Ming Yang

Chun-Lin Louis Chang

Jong-I Mou

Hsin-Hsien Wu

Jih-Jse Lin

Zin-Chang Wei

Ming-Yu Fan

Wen-Chih Chiou

Wei-Cheng Wu

Chii-Horng Li

Chien-Hao Chen

Harry Chuang

Ku-Feng Yang

Yung-Chi Lin

Kuo-Tai Huang

Li-Han Hsu

Jin-Aun Ng

Yi-Hsiu Chen

Chien-Liang Chen

Hao-Ming Lien

Kang-Cheng Lin

Chyi-Shyuan Chern

Wen-Chih Yang

Jo-Fei Wang

Chi-Cheng Lin

Pei-Ching Kuo

Chi Hsin Chang

Chun Ming Lin

Chyi Shyuan Chern

Jo Fei Wang

Chien-Chung Chen

Im-Cheol Ha

Chung-Hau Fei

Ssu-Yi Li

Ya-Chun Chang

Ting-Kuo Yen

Shang-Wen Chang

Ssu-Yu Li

Chien-Hau Fei

A memory device including a memory cell array, a redundant fuse circuit and a memory controller is provided. The memory cell array includes multiple regular memory blocks and multiple redundant memory blocks. The redundant fuse circuit includes multiple fuse groups recording multiple repair information. Each repair information is associated with a corresponding one of the redundant memory blocks and includes a repair address, a first enable bit, and a second enable bit. The memory controller includes multiple determining circuits. Each of the multiple determining circuits generates a hit signal according to an operation address, the repair address, the first enable bit, and the second enable bit. When a target memory block is bad, and the determining circuit of the memory controller generates the hit signal, the memory controller disables the redundant memory block that is bad according to the hit signal.

Memory device and operating method thereof

An inspection method for memory integrity, a non-volatile memory, and an electronic device are provided. The method includes following steps. A threshold voltage of at least one memory cell to-be-inspected in a non-volatile memory is obtained. A data value belonging to the at least one memory cell to-be-inspected is determined by comparing a read voltage and the threshold voltage. When the data value belonging to the at least one memory cell to-be-inspected is determined, a preset voltage is set according to the data value. An offset data value belonging to the at least one memory cell to-be-inspected is obtained by comparing the preset voltage and the threshold voltage of the at least one memory cell to-be-inspected. And, whether the data value and the offset data value belonging to the at least one memory cell to-be-inspected are the same is determined, so as to determine whether an integrity of the memory cell to-be-inspected is defective.

Inspection method for memory integrity, nonvolatile memory and electronic device

A memory device is provided and includes a status register, a memory array, a memory controller, an interface control circuit, and a write control logic circuit. The status register stores a plurality of status bits and a first threshold. The interface control circuit is controlled by the memory controller to perform a data program/erase operation on the memory array and re-program/re-erase the memory array in a retry mode when the data program/erase operation is not complete. The write control logic circuit counts the number of times the memory array is re-programmed/re-erased in the retry mode to generate a retry counting value, compares the retry counting value with the first threshold to generate a result signal. The status register updates a result bit included in the status bits according to the result signal. The memory controller determines whether the data program/erase operation is successful according to the result bit.

Memory device and program/erase method therefor

A flash memory storage device including a memory cell array and a memory control circuit is provided. The memory cell array includes a plurality of memory blocks and a redundant memory block. The memory blocks are configured to store data. The memory control circuit is coupled to the memory cell array. The memory control circuit is configured to perform an erase operation to a current memory block of the memory blocks and record an erase retry count of the current memory block. The memory control circuit determines whether the erase retry count exceeds a threshold value. If the erase retry count exceeds the threshold value, the memory control circuit replaces the current memory block by the redundant memory block erased in advance during a time interval of the erase operation. In addition, an operating method of a flash memory storage device is also provided.

Flash memory storage device and operating method thereof

An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.

Multi-zone temperature control for semiconductor wafer

Apparatus, and methods of manufacture thereof, in which metal is deposited into openings, thus forming a plurality of metal pads, a plurality of through-silicon-vias (TSVs), a plurality of metal lines, a plurality of first dummy structures, and a plurality of second dummy structures. Ones of the plurality of first dummy structures each have a first width that is at least about three times greater than a second width of each of the plurality of metal lines, and ones of the plurality of second dummy structures each have a third width that is at least about five times greater than the second width of each of the plurality of metal lines.

Dummy structure for chip-on-wafer-on-substrate

A storage medium communicating with a memory controller sent a read command is disclosed. The storage medium includes a plurality of memory units. Each memory unit includes at least sixteen memory cells coupled to a word line and a plurality of bit lines. A controlling unit receives first address information according to the read command and generates a row read signal and a column read signal according to the first address information. A row decoding unit activates the word line according to the row read signal. A column decoding unit activates the bit lines according to the column read signal to output a plurality of storing bits stored in the sixteen memory cells. A read-out unit processes the storing bits to generate a plurality of reading bits. The controlling unit outputs the reading bits to the memory controller in serial.

Storage medium and accessing system utilizing the same

A memory cell structure is provided. A first doping region is formed in a substrate. A second doping region is formed in the substrate. A first gate is formed on the substrate. The first and second doping regions and the first gate constitute a first transistor. A first word line is electrically connected to the first gate. The first word line firstly extends along a first direction and then along a second direction which is different from the first direction. A resistive layer is electrically connected to the first doping region. A conductive layer comprises a first source line and a bit line. The first source line is electrically connected to the second doping region, and the bit line is electrically connected to the resistive layer. The first and second doping regions extend along a third direction which is different from the first and second directions.

Memory cell structure and formation method thereof

A flash memory apparatus and a data reading method thereof are provided. A boost voltage greater than a pre-charge voltage is provided to a gate of a source discharge transistor when a data reading operation is performed on a memory unit, so as to enhance discharge capability of the source discharge transistor.

Flash memory apparatus and data reading method thereof

A flash memory apparatus with serial interface is disclosed. The flash memory apparatus includes a command receiver, a command decoder and a core circuit. The command receiver sequentially receives a plurality of command data through the data input pin and the clock pin. The command decoder receives a command sequence formed by the command data, and compares the command sequence with a reference sequence to generate a reset signal. The core circuit receives the reset signal to activate a reset operation according to the reset signal.

Flash memory apparatus with serial interface and reset method thereof

A flash memory apparatus with serial interface is disclosed. The flash memory apparatus includes a selector, a core circuit and a programmable data bank. The selector decides whether or not to connect one of a write protect pin and a hold pin to a reset signal line. The core circuit receives a reset signal transmitted by the reset signal line and activates a reset operation accordingly. A selecting data is written into the programmable data bank through a programming method and the programmable data bank outputs the selecting data to serve as a selecting signal.

A flash memory is disclosed. A core array stores data. A peripheral circuit accesses the data stored in the core array to generate read data. A off-chip driver (OCD) processes the read data to generate output data. An interconnect structure is electrically connected to the core array, the peripheral circuit, and the OCD and includes three conductive layers. The conductive layers are electrically connected to each other. An uppermost conductive layer is formed over the interconnect structure, electrically connected to the interconnect structure, and includes a first power pad and first power tracks. The first power pad is electrically connected to a power pin via a first bonding wire to receive an operation voltage. The first power tracks are electrically connected between the first power pad and the interconnect structure to transmit the operation voltage to at least one of the core array, the peripheral circuit and the OCD.

Flash memory and layout method thereof

The present disclosure provides a semiconductor device that includes a semiconductor substrate and a transistor formed in the substrate. The transistor includes a gate stack having a high-k dielectric and metal gate, a sealing layer formed on sidewalls of the gate stack, the sealing layer having an inner edge and an outer edge, the inner edge interfacing with the sidewall of the gate stack, a spacer formed on the outer edge of the sealing layer, and a source/drain region formed on each side of the gate stack, the source/drain region including a lightly doped source/drain (LDD) region that is aligned with the outer edge of the sealing layer.

Method of fabricating a sealing structure for high-k metal gate

Growing community of inventors

Taipei, Taiwan

Jun-Lin Yeh