Applied Materials, Inc.

Jun-Liang Su

Sriskantharajah Thirunavukarasu

Fang Jie Lim

Chin Wei Tan

Eng Sheng Peh

Karthik Elumalai

Dimantha Rajapaksa

Puay Han Tan

Arvind Sundarrajan

Ananthkrishna Jupudi

Tuck Foong Koh

Jen Sern Lew

Nuno Yen-Chu Chen

Felix Deng

Karrthik Parathithasan

Shoju Vayyapron

Qi Jie Peng

Sai Kumar Kodumuri

Wei Jie Dickson Teo

Arunkumar M Tatti

Embodiments of methods and apparatus for reducing warpage of a substrate are provided herein. In some embodiments, a method for reducing warpage of a substrate includes: applying an epoxy mold over a plurality of dies on the substrate in a dispenser tool; placing the substrate on a pedestal in a curing chamber, wherein the substrate has an expected post-cure deflection in a first direction; inducing a curvature on the substrate in a direction opposite the first direction; and curing the substrate by heating the substrate in the curing chamber.

Low warpage curing methodology by inducing curvature

Methods and apparatus for processing a substrate are provided. For example, metrology apparatus configured for use with a substrate processing platform comprise an interferometer configured to obtain a first set of measurements at a first set of points along a surface of a substrate, a sensor configured to obtain a second set of measurements at a second set of points different from the first set of points along the surface of the substrate, an actuator configured to position the interferometer and the sensor at various positions along a measurement plane parallel to the surface of the substrate for obtaining the first set of measurements and the second set of measurements, and a substrate support comprising a substrate support surface for supporting the substrate beneath the measurement plane while obtaining the first set of measurements and the second set of measurements.

Pre and post processing metrology apparatus

Methods and apparatus for processing a substrate are provided herein. For example, a system for processing a substrate includes a process chamber comprising a first processing volume and a second processing volume, a carrier disposed in the first processing volume, comprising a first thermoelectric module (TEM), and configured to support the substrate while the substrate is being heated or cooled, a chuck disposed within the second processing volume, comprising a second TEM, and configured to receive the substrate from the carrier and to support the substrate while the substrate is being heated or cooled, and a system controller configured to monitor a temperature of at least one of the substrate, the carrier, or the chuck during operation, and based on the temperature of the at least one of the substrate, the carrier, or the chuck, supply current to at least one of the first TEM or the second TEM.

Methods and apparatus for warpage correction

Methods and apparatus for processing a substrate are provided herein. For example, a system for processing a substrate includes a process chamber comprising a first processing volume and a second processing volume; a first heating device configured to heat a substrate to a first temperature; a carrier configured to support the substrate while the substrate is being heated using the first heating device to the first temperature and transfer the substrate to and from each of the first processing volume and the second processing volume; a second heating device configured to maintain the substrate at or near the first temperature; and a chuck configured to receive the substrate from the carrier, and comprising an outer zone and an inner zone having independent variable pressure control to apply a chucking force at the outer zone that is different from a chucking force provided at the inner zone.

Methods and apparatus for processing a substrate

Systems, apparatuses and methods for determining a surface profile of a substrate are provided. In one embodiment, a method includes projecting a signal having a vertical component/profile across the surface of the substrate from a plurality of locations along a first side of the substrate, capturing the projected signals at each of a plurality of respective locations across the surface of the substrate and determining a surface profile for the substrate using the captured signals. The process can be automated using a controller having predetermined projection and capture positions along respective sides of the substrate, where a surface profile of the substrate can be automatically determined by the controller using the captured signals.

Next generation warpage measurement system

Embodiments of methods and apparatus for correcting substrate deformity are provided herein. In some embodiments, a substrate support includes a base having an interior volume formed by walls extending upward from the base; a plurality of infrared lamps disposed within the interior volume; a support plate disposed above the plurality of infrared lamps, wherein the support plate includes a support surface to support a substrate; and a cover plate disposed atop the support plate and having a central opening corresponding to the support surface and an exhaust portion at a periphery of a top surface of the cover plate, wherein the exhaust portion includes a plurality of perforations fluidly coupling a space above the cover plate with an exhaust conduit formed in the cover plate. Embodiments of a showerhead assembly and processing equipment incorporating the inventive substrate support and showerhead assembly are additionally provided herein.

Methods and apparatus for correcting substrate deformity

Embodiments of methods and apparatus for correcting substrate deformity are provided herein. In some embodiments, a substrate flattening system includes: a first process chamber having a first substrate support and a first showerhead, wherein the first substrate support does not include a chucking mechanism; a first heater disposed in the first substrate support to heat a substrate placed on a first support surface of the first substrate support; a second heater configured to heat a process gas flowing through the first showerhead into a first processing volume of the first process chamber; and a second process chamber having a second substrate support, wherein the second substrate support is not heated, and wherein the first process chamber and the cooling chamber are both non-vacuum chambers.

Growing community of inventors

Singapore, Singapore

Jun-Liang Su