Agency for Science, Technology and Research

Marvellworld Trade Ltd.

National University of Singapore

Marvell International Limited

Nanyang Technological University

Asm Technology Singapore Pte Ltd

Omeros Corporation

Data Storage Institute

Institute of Materials Research and Engineering

Dragon Energy Pte. Ltd.

Jun Li

Zhikuan Chen

Kok Haw Ong

Siew Yong Chui

Beng Ong

Xian Jun Loh

Kam W Leong

Siew Lay Lim

Samarendra Pratap Singh

Suat Hong Goh

Xiping Ni

Yujun Zhao

Ivy Wong

Hoi Kai Ivy Wong

Kang Yee Seah

Yuning Li

Ravishanker Krishnamoorthy

Chuan Yang

Xu Li

Hanry Yu

Xin Wang

Tow Chong Chong

Christopher George Edward Nightingale

Swee Ming Goh

Zhongxing Zhang

Wai Wah Lee

Boon Hou Tay

Prashant Sonar

Teck Wee Ang

Ging Meng Ng

Chang Ming Li

Kok Hiong Thomas Teh

Pujiang Shi

Hongzhe Li

JingFeng Liu

Hoi Po James Hui

Yi Hong Wu

Cheng Chiang Phua

Lee Yang

Wei Boon Wong

Le Yang

Soo Kin Kenny Tan

Cho Hong James Goh

Qin Fang

Described herein are copolymers comprising at least one first water-soluble monomeric unit, at least one second water-soluble monomeric unit, and at least one monomeric unit containing a basic residue.

Copolymers

There is provided p-type organic polymers of general formula I. The polymers may be useful as semi-conducting material. Thus, thin films and devices comprising such polymers are also provided.

P-type semiconducting polymers and related methods

The present invention relates to a device for the interfacial augmentation of tissue grafts for the purpose of tendon and ligament reconstruction. The inventive device works both as a delivery vessel for osteoconductive and osteoinductive factors and as a scaffold to stimulate and support bone ingrowth and comprises a tubular composite silk sheath, said tubular composite silk sheath comprising: a backbone consisting of a tubular silk mesh, and a carrier material consisting of a porous silk sponge, wherein said tubular silk mesh consists of degummed silk fibroin fibers, wherein said porous silk sponge comprises silk fibroin fibers and hydroxyapatite particles and said tubular silk mesh and said porous silk sponge form a composite material. The present invention is also directed to a method for the manufacturing of such augmentation devices, a method for fixation of the thus fabricated tissue interface augmentation devices onto ligament or tendon grafts, a method for applying such devices for ligament and/or tendon reconstruction to tendon grafts, as well as their application in ligament and tendon reconstruction.

Tissue interface augmentation device for ligament/tendon reconstruction

This invention relates to shape memory block copolymers comprising: at least one switching segment having a Tfrom 10 to 70&#xb0; C.; and at least one soft segment, wherein at least one of the switching segments in linked to at least one of the soft segments by at least one linkage, and wherein the copolymer transforms from a first shape to a second shape by application of a first stimulus and the copolymer transforms back to the first shape from the second shape by application of a second stimulus. The shape memory block copolymers may be biocompatible and biodegradable.

Biodegradable and biocompatible shape memory polymers

A polymer comprises a polymeric chain represented by formula (I) or (II). In formula (I) a, b, d, and n are integers, a from 0 to 3, b from 1 to 5, c from 1 to 3, d from 1 to 5, and n from 2 to 5000; Rand Rare side chains; Rand Rare each independently H or a side chain; and when a is 0, Rand Rare side chains. In formula (II), a, b, c, d, e, and n are integers, a from 1 to 3, b and c being independently 0 or 1, d and e being independently 1 or 2, and n from 2 to 5000; Rand Rare side chains except &#x2014;COOalkyl; and X, Xand Xare independently O, S, or Se. Semiconductors and devices comprising the polymer are also provided. 

Polymeric semiconductors, devices, and related methods

Aspects of the disclosure provide a circuit. The circuit includes a depletion mode transistor coupled to a power supply and a current path coupled with the depletion mode transistor in series to provide a current to charge a capacitor. The current path has a first resistance during a first stage, such as when the circuit initially receives power, and has a second resistance during a second stage when the capacitor is charged to have a predetermined voltage level.

Start-up circuit

A multi-converter system includes a first converter configured to receive an input voltage and output a first PWM switching signal based on the input voltage. A power distribution balancing circuit is configured to detect a frequency of the first PWM switching signal and generate a control signal based on the frequency of the first PWM switching signal. A second converter is configured to receive the input voltage and output a second PWM switching signal in response to the control signal. An output voltage node is configured to output an output voltage based on the first and second PWM switching signals.

Multi-converter system including a power distribution balancing circuit and operating method thereof

A method of recovering a bonding apparatus from a bonding failure to resume a normal operating state for semiconductor chip fabrication is disclosed. The bonding apparatus comprises: i) a bonding tool for bonding a wire between a semiconductor chip and a substrate; and ii) a position sensor. Specifically, the method comprises the steps of: a) the position sensor determining a position of the bonding tool when the bonding tool contacts a surface to bond the wire to the substrate; b) the bonding apparatus detecting a bonding failure caused by detachment of the semiconductor from the substrate based on the position of the bonding tool; and c) the bonding apparatus detaching the semiconductor chip from the wire.

Method of recovering a bonding apparatus from a bonding failure

Aspects of the disclosure provide a circuit. The circuit includes a control circuit and a return path circuit. The control circuit is configured to operate in response to a first conduction angle of a dimmer coupled to the circuit. The first conduction angle is adjusted to control an output power to a first device. The dimmer has a second conduction angle that is independent of the control of the output power to the first device. The return path circuit is configured to provide a return path to enable providing power to a second device in response to the second conduction angle.

Method and apparatus for TRIAC applications

There is presently provided compounds of formula (I), which are useful as p-type semiconductor materials and in devices comprising such p-type semiconductor materials. 

P-type materials and organic electronic devices

This invention relates to shape memory block copolymers comprising: at least one switching segment having a Tfrom 10 to 70&#xb0; C.; and at least one soft segment, wherein at least one of the switching segments is linked to at least one of the soft segments by at least one linkage, and wherein the copolymer transforms from a first shape to a second shape by application of a first stimulus and the copolymer transforms back to the first shape from the second shape by application of a second stimulus. The shape memory block copolymers may be biocompatible and biodegradable.

A polymer comprises a polymeric chain represented by formula (I) or (II). In formula (I), a, b, c, d, and n are integers, a from 0 to 3, b from 1 to 5, c from 1 to 3, d from 1 to 5, and n from 2 to 5000; Rand Rare side chains; Rand Rare each independently H or a side chain; and when a is 0, Rand Rare side chains. In formula (II), a, b, c, d, e, and n are integers, a from 1 to 3, b and c being independently 0 or 1, d and e being independently 1 or 2, and n from 2 to 5000; Rand Rare side chains except &#x2014;COOalkyl; and X, Xand Xare independently O, S, or Se. Semiconductors and devices comprising the polymer are also provided. 

An organic compound represented by the following general formula (I) wherein n is an integer from 1 to 500, inclusive, and R1 and R2 are each independently a moiety having an atom length of from about 8 atoms to about 20 atoms. 

Dithienothiophene derivatives

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Singapore, Singapore

Jun Li