Sony Corporation

Jun Kuroiwa

Mitsuru Sato

Hideshi Abe

Yoshiaki Kitano

Nobuhiro Karasawa

Hiroaki Ohki

Ritsuo Takizawa

Kiyoshi Hirata

Mitsuru Yamashita

Katsunori Kokubun

A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

Solid-state imaging device

Solid-state imaging device and method for manufacturing thereof as well as driving method of solid-state imaging device

A solid-state imaging device having an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

Solid-state imaging device and driving method of solid-state imaging device

Solid-state imaging device with biased light shielding film

A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfer register (vertical register) for transferring the signal charge read by the reading gate. Therein, a groove is formed on the surface side of the substrate, and the transfer register and the reading gate are formed at the bottom part of the groove. With such a structure, in the solid-state image pickup device, reduction can be achieved for the smear characteristics, a reading voltage, noise, and others.

Solid-state image pickup device and manufacturing method for the same

A solid-state imaging device that has a satisfactory noise characteristic and readout characteristic is provided by improving the noise characteristic and readout characteristic in a well balanced way. The solid-state imaging device has such a structure that an electrodefor reading a signal charge is provided on one side of a light-receiving sensor portionconstituting a pixel; a predetermined voltage signal V is applied to a light-shielding filmformed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor areais formed in the center on the surface of a first-conductivity-type semiconductor areaconstituting a photo-electric conversion area of the light-receiving sensor portion; and areas(A,B) containing a lower impurity concentration than that of the second-conductivity-type semiconductor areais formed on the surface of the first-conductivity-type semiconductor areaat the end on the side of the electrodeand at the opposite end on the side of a pixel-separation area

Method of driving solid state image sensing device

Growing community of inventors

Kanagawa, Japan

Jun Kuroiwa