Semiconductor Energy Laboratory Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Other

Canon Kabushiki Kaisha

Jun Koyama

Shunpei Yamazaki

Kiyoshi Kato

Hiroyuki Miyake

Mitsuaki Osame

Satoshi Teramoto

Hisashi Ohtani

Takeshi Fukunaga

Yasushi Ogata

Hajime Kimura

Masahiko Hayakawa

Masashi Tsubuku

Yoshiharu Hirakata

Toshimitsu Konuma

Kosei Noda

Yu Yamazaki

Yasuyuki Arai

Akiharu Miyanaga

Yutaka Shionoiri

Yukio Tanaka

Kei Takahashi

Kazutaka Inukai

Hidehito Kitakado

Aya Anzai

Munehiro Azami

Satoshi Murakami

Hideaki Kuwabara

Yasuhiko Takemura

Toshiji Hamatani

Kouhei Toyotaka

Tatsuya Arao

Yoshifumi Tanada

Mai Akiba

Takeshi Osada

Hideomi Suzawa

Hideaki Shishido

Koji Ono

Keisuke Miyagawa

Hideto Ohnuma

Yasuo Nakamura

Hiroshi Shibata

Toru Takayama

Atsushi Umezaki

Hideki Uochi

Tomoaki Atsumi

Yasushi Kubota

Masahiro Takahashi

Hideyuki Kishida

Atsushi Hirose

Takayuki Ikeda

Takanori Matsuzaki

Setsuo Nakajima

Junichiro Sakata

Atsushi Miyaguchi

Keitaro Imai

Satoshi Seo

Yasuko Watanabe

Ikuko Kawamata

Masaaki Hiroki

Yoshitaka Yamamoto

Hiroko Abe

Masato Ishii

Yoshiyuki Kurokawa

Toshihiko Saito

Hongyong Zhang

Takeshi Nishi

Junya Maruyama

Kazuo Nishi

Shuhei Nagatsuka

Shinji Maekawa

Seiichi Yoneda

Kengo Akimoto

Junichi Koezuka

Osamu Nakamura

Hiroki Inoue

Toshiyuki Isa

Kenichi Okazaki

Kazunori Watanabe

Hiroyuki Ogawa

Daisuke Matsubayashi

Koji Dairiki

Hidetomo Kobayashi

Kaoru Hatano

Takuro Ohmaru

Naoaki Yamaguchi

Masayuki Sakakura

Hidekazu Miyairi

Naoto Kusumoto

Atsuo Isobe

Koji Kusunoki

Shingo Eguchi

Tetsuhiro Tanaka

Junpei Momo

Fumiaki Funada

Yutaka Takafuji

Hajime Washio

Yuji Iwaki

Konami Izumi

Masahiro Adachi

Minoru Takahashi

An object of the present invention is to provide a semiconductor device having a novel structure in which in a data storing time, stored data can be stored even when power is not supplied, and there is no limitation on the number of writing. A semiconductor device includes a first transistor including a first source electrode and a first drain electrode; a first channel formation region for which an oxide semiconductor material is used and to which the first source electrode and the first drain electrode are electrically connected; a first gate insulating layer over the first channel formation region; and a first gate electrode over the first gate insulating layer. One of the first source electrode and the first drain electrode of the first transistor and one electrode of a capacitor are electrically connected to each other.

Semiconductor device

A portable electronic device that can operate even when electric power supplied through contactless charge by electromagnetic induction is low is provided. The portable electronic device includes a reflective liquid crystal display which includes a transistor including an oxide semiconductor, a power source portion which includes a rechargeable battery capable of charge by contactless charge, and a signal processing portion which includes a nonvolatile semiconductor memory device. In the portable electronic device, electric power stored in the rechargeable battery is used in the reflective liquid crystal display and the signal processing portion.

Electronic device including a circuit storing a signal

The amplitude voltage of a signal input to a level shifter can be increased and then output by the level shifter circuit. Specifically, the amplitude voltage of the signal input to the level shifter can be increased to be output. This decreases the amplitude voltage of a circuit (a shift register circuit, a decoder circuit, or the like) which outputs the signal input to the level shifter. Consequently, power consumption of the circuit can be reduced. Alternatively, a voltage applied to a transistor included in the circuit can be reduced. This can suppress degradation of the transistor or damage to the transistor.

Semiconductor device and electronic appliance

An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.

Light-emitting device

The liquid crystal display device includes a first substrate provided with a terminal portion, a switching transistor, a driver circuit portion, and a pixel circuit portion including a pixel transistor and a plurality of pixels, a second substrate provided with a common electrode electrically connected to the terminal portion through the switching transistor, and liquid crystal between a pixel electrode and the common electrode. In a period during which a still image is switched to a moving image, the following steps are sequentially performed: a first step of supplying the common potential to the common electrode; a second step of supplying a power supply voltage to the driver circuit portion; a third step of supplying a clock signal to the driver circuit portion; and a fourth step of supplying a start pulse signal to the driver circuit portion.

Method for driving liquid crystal display device

An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

Semiconductor device and manufacturing method thereof

Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.

Semiconductor device and electronic device including semiconductor device

An object of one embodiment of the present invention is to provide a semiconductor device with a novel structure in which stored data can be stored even when power is not supplied in a data storing time and there is no limitation on the number of times of writing. The semiconductor device includes a first transistor which includes a first channel formation region using a semiconductor material other than an oxide semiconductor, a second transistor which includes a second channel formation region using an oxide semiconductor material, and a capacitor. One of a second source electrode and a second drain electrode of the second transistor is electrically connected to one electrode of the capacitor.

Provided is a semiconductor device including a sequential circuit including a first transistor and a capacitor. The first transistor includes a semiconductor layer including indium, zinc, and oxygen to form a channel formation region. A node electrically connected to a source or a drain of the first transistor and a capacitor becomes a floating state when the first transistor turns off, so that a potential of the node can be maintained for a long period. A power-gating control circuit may be provided to control supply of power supply potential to the sequential circuit. The potential of the node still can be maintained while supply of the power supply potential is stopped.

Semiconductor integrated circuit

To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10A or less per micrometer in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals.

Logic circuit and semiconductor device

An e-book reader in which destruction of a driver circuit at the time when a flexible panel is handled is inhibited. In addition, an e-book reader having a simplified structure. A plurality of flexible display panels each including a display portion in which display control is performed by a scan line driver circuit and a signal line driver circuit, and a binding portion fastening the plurality of display panels together are included. The signal line driver circuit is provided inside the binding portion, and the scan line driver circuit is provided at the edge of the display panel in a direction perpendicular to the binding portion.

Electronic book

A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.

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Kanagawa, Japan

Jun Koyama