Tokyo Ohka Kogyo Co., Ltd.

Jun Koshiyama

Kazumasa Wakiya

Yoshihiro Sawada

Hidekazu Tajima

Atsushi Miyamoto

Atsushi Sawano

Takako Hirosaki

Tomoyuki Hirano

Masaaki Yoshida

Fumitake Kaneko

Futoshi Shimai

Tomoya Kumagai

Jiro Yokoya

Tsukasa Sugawara

Mai Sugawara

Naohisa Ueno

Mitsuru Sato

Toshimasa Nakayama

Takeshi Tanaka

Hidekatsu Kohara

Masanori Ichikawa

Kiyoshi Ishikawa

Koichi Nagasawa

Etsuko Iguchi

Satoshi Niikura

Tetsuya Kato

Hideya Kobari

Kouichi Takahashi

Hiromitsu Tsuji

Kouji Harada

Masahiro Masujima

Yuriko Shirai

Mitsuharu Tobari

Yasumitsu Taira

Etsuko Nakamura

Hidehito Fukushima

Naomi Kawaguchi

Hayato Takashima

Takao Nakajima

Chima Shinohara

The present invention addresses the problem of providing: a method for purifying a liquid using a porous polyimide and/or polyamideimide membrane having excellent impurities (e.g., metals) removal performance which is preferably compatible with a flow rate, and also having an excellent stress, an excellent breaking elongation and the like; a method for producing a chemical solution or a cleaning solution employing the purification method; a filter medium comprising the porous membrane; and a filter device equipped with the porous membrane. A method for purifying a liquid, comprising causing a portion or the whole of the liquid to pass through a porous polyimide and/or polyamideimide membrane having communicated pores from one side of the membrane to the other side of the membrane by the action of a differential pressure between the two sides.

Method for purifying liquid, method for producing chemical solution or cleaning solution, filter medium, and filter device

Provided are a polyimide and/or polyamideimide porous body and method for manufacturing same, method for separation and/or adsorption using the porous body, a separation material, adsorption material, and filter media composed of the porous body, a laminate, and a filter device. A polyimide and/or polyamideimide porous body in which the polyimide and/or polyamideimide has at least one group selected from the group consisting of a carboxy group, a salt-type carboxy group, and a &#x2014;NH&#x2014; bond.

Polyimide and/or polyamideimide porous body and method for manufacturing same, method for separation and/or adsorption, separation material, adsorption material, filter media, laminate, and filter device

A developing solution for photolithography in which tetrabutylammonium hydroxide (TBAH) is used as an alkaline agent of the developing solution and deposition of TBAH is suppressed. A method for producing a developing solution for photolithography capable of suppressing TBAH deposition when producing the developing solution by diluting a concentrated developing solution containing TBAH and a production apparatus used for the production method. The developing solution includes tetrabutylammonium hydroxide and at least one of a water-soluble organic solvent, a surfactant, and a clathrate compound. The temperature of the liquid is maintained at 27&#xb0; C. or higher during dilution.

Developing solution for photolithography, method for forming resist pattern, and method and apparatus for producing developing solution for photolithography

Disclosed is a surface treatment liquid which enables simple and efficient hydrophobilization of a substrate and prevention of collapse of a resin pattern or etched pattern. Also disclosed are a surface treatment method using the surface treatment liquid, a hydrophobilization method using the surface treatment liquid, and a hydrophobilized substrate. When a substrate is hydrophobilized, the substrate is coated with a surface treatment liquid containing a silylating agent and a hydrocarbon non-polar solvent. When a pattern is prevented from collapse, the surface of a resin pattern formed on a substrate or etched pattern formed on a substrate by etching is treated using a surface treatment liquid containing a silylating agent and a solvent.

Surface treatment liquid, surface treatment method, hydrophobilization method, and hydrophobilized substrate

Provided are a surface treatment agent that can effectively suppress pattern collapse of an inorganic pattern or resin pattern provided on a substrate, a surface treatment method using such a surface treatment agent, as well as a surface treatment agent that can carry out silylation treatment to a high degree on the surface of a substrate, and a surface treatment method using such a surface treatment agent. A surface treatment agent is used that is employed in hydrophobization treatment of a substrate surface and includes a silylation agent containing at least one compound having a disilazane structure and a solvent containing a five- or six-membered ring lactone compound.

Surface treatment agent and surface treatment method

A composition for forming an anti-reflection film for use in forming an anti-reflection film on a resist film is provided, the composition for forming an anti-reflection film being easily handled, and capable of forming an anti-reflection film having superior optical characteristics similarly to anti-reflection films formed using PFOS. A composition for forming an anti-reflection film to be provided on a resist film which includes a certain fluorine compound. This composition for forming an anti-reflection film can form an anti-reflection film having superior optical characteristics since the certain fluorine compound contributes to improvement of the optical characteristics of the anti-reflection film.

Composition for antireflection film formation and method for resist pattern formation using the composition

Problem: To provide a cleaning liquid and a cleaning method having excellent leaning capability. In a process of liquid immersion lithography, they can preventing the damage to be caused by the component released from the photoresist to photoexposure devices; the waste treatment is easy; the efficiency in substitution with the cleaning liquid for the medium for liquid immersion lithography is high, and the production cost is reduced not detracting from the throughput in semiconductor production. Means for Solution: A cleaning liquid to be used for cleaning a photoexposure device in a process of liquid immersion lithography, which comprises at least 5% by mass of a nonionic surfactant containing at least one group selected from an ethyleneoxy group, a propyleneoxy group and a polyglycerin group, and a balance of water; and a cleaning method using it.

Cleaning method for a process of liquid immersion lithography

Provided are a surface treatment agent for which hydrophobization to a high degree is possible even in a case of the material of a substrate surface being TiN or SiN, and surface treatment method using such a surface treatment agent. The surface treatment agent according to the present invention contains a cyclic silazane compound. As this cyclic silazane compound, a cyclic disilazane compound such as 2,2,5,5-tetramethyl-2,5-disila-1-azacyclopentane and 2,2,6,6-tetramethyl-2,6-disila-1-azacyclohexane and a cyclic trisilazane compound such as 2,2,4,4,6,6-hexamethylcyclotrisilazane and 2,4,6-trimethyl-2,4,6-trivinylcyclotrisilazane are preferred. In the surface treatment, a substrate surface is exposed to a surface treatment agent according to the present invention, and the substrate surface is hydrophobized.

Conventional detergents for lithography which contain a surfactant as an active ingredient should have a reduced surfactant concentration because heightened surfactant concentrations result in dissolution of the resin component of a photoresist composition and hence in a dimensional change of a resist pattern. However, the conventional detergents have had a drawback that such a low concentration unavoidably reduces the ability to inhibit pattern falling and defect occurrence. A detergent for lithography is provided which is an aqueous solution containing (A) at least one member selected among nitrogenous cationic surfactants and nitrogenous ampholytic surfactants and (B) an anionic surfactant. This detergent retains a low surface tension even when it has a low concentration. It is effective in inhibiting pattern falling and defect occurrence. It can also inhibit resist patterns from fluctuating in dimension.

Detergent for lithography and method of forming resist pattern with the same

The anti-reflection film forming material according to the present invention includes (a) a water soluble resin having a vinyl acetate constituent unit, and (b) a compound having a constituent unit represented by the following general formula. Wherein, Rand Rrepresent a direct bond or a methylene chain; Rand Rrepresent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a group represented by &#x2014;(CH)&#x2014;O&#x2014;R&#x2014;R; and at least one of Rand Ris a group represented by &#x2014;(CH)&#x2014;O&#x2014;R&#x2014;R, wherein: Rrepresents a direct bond or an alkylene chain having 1 to 10 carbon atoms which may be interrupted with &#x2014;O&#x2014;; Rrepresents an alkyl group having 1 to 10 carbon atoms in which a portion or all hydrogen atoms are substituted with a fluorine atom; and n represents an integer of 0 to 10. Wherein, the total number of carbon atoms present in Rand Ris 1 or 2.

Anti-reflection film forming material, and method for forming resist pattern using the same

A composition for forming an anti-reflection film on a resist film is provided, which is superior in handling characteristics, and is not accompanied by generation of deposits and the like after forming the film. A composition for forming an anti-reflection film to be provided on a resist film is provided, which includes at least a certain fluorochemical surfactant, and a certain water soluble film forming component. The composition for forming an anti-reflection film can be easily handled, has no adverse effect on health or the environment, and also avoids the generation of deposits and the like even after forming an anti-reflection film.

Composition for formation of anti-reflection film, and method for formation of resist pattern using the same

A novel method for forming a pattern capable of decreasing the number of steps in a double patterning process, and a material for forming a coating film suitably used in the method for forming a pattern are provided. First resist film () is formed by applying a first chemically amplified resist composition on support (), and thus formed film is selectively exposed, and developed to form multiple first resist patterns (). Next, on the surface of the first resist patterns () are formed multiple coating patterns () by forming coating films () constituted with a water soluble resin film, respectively. Furthermore, a second chemically amplified resist composition is applied on the support () having the coating pattern () formed thereon to form second resist film (), which is selectively exposed and developed to form multiple second resist patterns (). Accordingly, a pattern including the coating patterns () and the second resist patterns () is formed on the support ().

Method for forming pattern, and material for forming coating film

Problem: To provide a cleaning liquid for lithography and a cleaning method using it for photoexposure devices. In a process of liquid immersion lithography, the cleaning liquid may efficiently clean the photoexposure device site (especially optical lens member) contaminated with the component released from photoresist and remove the contaminant, and in addition, the waste treatment for the cleaning liquid is easy, the efficiency in substitution with the cleaning liquid for the medium for liquid immersion lithography is high, and the cleaning liquid does not detract from the throughput in semiconductor production. Means for Solution: A cleaning liquid for photolithography to be used for cleaning a photoexposure device in a process of liquid immersion lithography that comprises filling the space between the optical lens member of a photoexposure device and an object for photoexposure mounted on the wafer stage, with a medium for liquid immersion lithography, the cleaning liquid comprising (a) a surfactant, (b) a hydrocarbon solvent, and (c) water; and a cleaning method using it for photoexposure devices.

Cleaning liquid for lithography and a cleaning method using it for photoexposure devices

The invention provides a novel rinse solution used in the step of rinse treatment of a patterned photoresist layer developed with an aqueous alkaline developer solution in a photolithographic process for the manufacture of semiconductor devices and liquid crystal display panels. The rinse solution provided by the invention is an aqueous solution of a nitrogen-containing heterocyclic compound such as imidazoline, pyridine and the like in a concentration up to 10% by mass. Optionally, the rinse solution of the invention further contains a water-miscible alcoholic or glycolic organic solvent and/or a water-soluble resin. The invention also provides a lithographic method for the formation of a patterned photoresist layer including a step of rinse treatment of an alkali-developed resist layer with the rinse solution defined above. The invention provides an improvement on the lithographic process in respect of the product quality and efficiency of the process.

Lithographic rinse solution and method for forming patterned resist layer using the same

Disclosed is a cleaning liquid for lithography which is characterized by containing a mixed organic solvent which is obtained by mixing (A) at least one solvent selected from ketone organic solvents and glycol ether organic solvents, (B) at least one solvent selected from lactone organic solvents and (C) at least one solvent selected from alkoxy benzenes and aromatic alcohols. This cleaning liquid is highly safe and does not have adverse effects on the environment or the human body, while having basic characteristics necessary for a cleaning liquid for lithography. In addition, this cleaning liquid can be stably supplied at low cost.

Growing community of inventors

Kawasaki, Japan

Jun Koshiyama