Sony Corporation

Jun Komachi

Shinya Yamakawa

Koji Nagahiro

A photoelectric conversion element according to one embodiment of the disclosure includes a photoelectric conversion region inside a semiconductor layer. The photoelectric conversion region includes a region in which a depletion region is to be formed by voltage application to the semiconductor layer. The semiconductor layer has a first main surface and a second main surface. The depletion region converts light into a photoelectron, in which the light enters from side on which the first main surface is disposed. The photoelectric conversion element further includes an isoelectronic trap region in the region in which the depletion region is to be formed.

Photoelectric conversion element and photoelectric conversion device

An ion injection simulation method includes: calculating a reinjection dose injected into a substrate and a structure formed on the substrate and reinjected from a side face of the structure; and calculating concentration distribution of impurities injected into the substrate from a distribution function and reinjection conditions of the reinjection dose.

Ion injection simulation method, ion injection simulation device, method of producing semiconductor device, and method of designing semiconductor device

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Kanagawa, Japan

Jun Komachi