Samsung Electronics Co., Ltd.

International Business Machines Corporation

Infineon Technologies North America Corp.

Jun-Keun Kwak

Keith Kwong Hon Wong

Robert J Purtell

Anita Madan

Roland Hampp

A method of forming silicide contacts for semiconductor devices includes subjecting a silicon containing semiconductor wafer to a degas treatment at an initial degas temperature of about 250 to about 400&#xb0; C., transferring the semiconductor wafer from a degas chamber to a deposition chamber, depositing a nickel containing layer over the wafer following transfer of the wafer from the degas chamber to the deposition chamber, and annealing the semiconductor wafer so as to create silicide regions at portions on the wafer where nickel material is formed over silicon.

Method for improved formation of nickel silicide contacts in semiconductor devices

Provided is a method of manufacturing a semiconductor device with enhanced electrical characteristics. The method includes disposing a substrate on a substrate support in a process chamber, pre-heating the substrate on the substrate support adjusted to a temperature from 300 to 400&#xb0; C. for 60 seconds or more, forming a silicon protective layer on the substrate by supplying a silicon source gas into the process chamber and heating the substrate on the substrate support adjusted to a temperature from 300 to 400&#xb0; C. for 10 seconds or more, and forming a tungsten layer on the silicon protective layer.

Method of manufacturing semiconductor device

Growing community of inventors

Seoul, South Korea

Jun-Keun Kwak