Fuji Xerox Co., Ltd.

Nec Corporation

Renesas Electronics Corporation

Asm IP Holding B.v.

Combi Corporation

Sumitomo Chemical Company, Limited

Asm Japan K.k.

Rise Research Institutes of Sweden Ab

Jun Kawahara

Yoshihiro Hayashi

Yasuo Yamamoto

Hiroaki Moriyama

Kei Shimotani

Takayuki Takeuchi

Rie Ishii

Satoshi Tatsuura

Ryojiro Akashi

Ippei Kume

Daisuke Nakayama

Akinori Nakano

Suvi P Haukka

Yukihiro Mori

Eva E Tois

Antti Niskanen

Naoya Inoue

Raija H Matero

Keizo Kinoshita

Nobutaka Kunimi

Nami Tokunaga

Hiroshi Kayashima

Hironori Yamamoto

Kazuo Sato

Masahiro Moriyama

Masaaki Abe

Hidemi Suemori

Akinori Komura

Naoya Furutake

Takashi Uematsu

Ryoko Yamada

Yukihiko Maejima

Takashi Oyanagi

Tatsuo Nakamata

Jaako Anttila

Tatsuya Usami

Hiroshi Inoue

Yoshiro Yamashita

Hirohito Yoneyama

Takashi Morikawa

Koichi Ohto

Masato Mikami

Chisato Urano

Hiroaki Tsutsui

Tomohisa Nishikawa

Kenichiro Hijioka

Masaki Mayuzumi

Takeo Matsuki

Jaakko Anttila

Hirofumi Ono

Hiroki Shirai

Mikio Shimizu

Shinobu Saitou

Xavier Crispin

Masaki Tokunaga

Shinobu Saitoh

Shinobu Saito

Tomonori Sakaguchi

Toshiaki Iijima

Hiroki Matsuda

Simone Fabiano

Agung Setiadi

Magnus Berggren

Negar Abdollahi Sani

A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes performing one or more deposition cycles and performing a treatments process.

Method for selective deposition of silicon nitride and structure including selectively-deposited silicon nitride layer

In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Apparatuses for thin film deposition

A method for manufacturing a semiconductor device includes forming a SiN film on a substrate. Plasma treatment is applied to the SiN film using a He-containing gas.

Method for manufacturing semiconductor device with helium-containing gas

A shower plate adapted to be installed in a plasma deposition apparatus including a gas inlet port, a shower head, a reaction chamber and an exhaust duct, the shower plate being adapted to be attached to the showerhead and having: a front surface adapted to face the gas inlet port; and a rear surface opposite to the front surface, wherein the shower plate has multiple apertures each extending from the front surface to the rear surface, and wherein the shower plate further has at least one aperture extending from the front surface side of the shower plate to the exhaust duct.

Shower plate structure for exhausting deposition inhibiting gas

A three-dimension forming support material includes a photocurable compound that contains an urethane (meth)acrylate and a non-photocurable polymer having a hydroxyl value of 60 mgKOH/g to 300 mgKOH/g.

Three-dimension forming support material, three-dimension forming composition set, three-dimension forming apparatus, and method of preparing three-dimensional shaped product

In accordance with some embodiments herein, methods for deposition of thin films are provided. In some embodiments, thin film deposition is performed in a plurality of stations, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Methods for thin film deposition

Shower plate

An ink includes a radiation-curable compound, a liquid matter which is incompatible with the radiation-curable compound and is dispersed in a state of droplets, and a surfactant.

Ink, ink cartridge, ink discharge apparatus, ink discharge method, and cured product

A coating liquid includes a polymer particle, an aggregating agent for a coloring material, a nonionic surfactant having an HLB value within the range of 15.5 to 20, and water.

Coating liquid and recording medium

Particles for display include a copolymer that contains at least, as copolymer constituents, a reactive compound containing a silicone chain or an alkyl chain and a vinyl compound represented by Formula (1), wherein a content of the reactive compound containing a silicone chain or an alkyl chain is 3.0% by weight or less with respect to the weight of the particles:ArHC&#x2550;CH)&#x2003;&#x2003;Formula (1)wherein in Formula (1), Ar represents an unsubstituted aromatic ring or an aromatic ring that is substituted with an alkyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 12 carbon atoms, and n represents an integer from 1 to 4.

Particles for display, particle dispersion for display, display medium, and display device

A semiconductor device containing a novel cyclosiloxane polymer showing electroconductivity or semiconductivity has a charge transport layer comprising a plasma polymer containing structural units (A) each having a transition metal as a central metal and structural units (B) each situated between structural units (A) adjacent to each other and having a cyclosiloxane skeleton. The charge transport layer is formed by plasma polymerization of an organic metal compound having the transition metal as the central metal and the cyclosiloxane compound in a reactor.

Semiconductor device, method of manufacturing the semiconductor device, and a thin film

A semiconductor device includes a first insulating layer (interlayer insulating layer), a resistive element that is disposed over the first insulating layer (interlayer insulating layer) and at least a surface layer of which is a TaSiN layer, and an interlayer insulating layer disposed over the first insulating layer (interlayer insulating layer) and the resistive element. Multiple via plugs having ends coupled to the TaSiN layer are disposed in the interlayer insulating layer.

Semiconductor device having a resistive element including a TaSiN layer

The present invention provides a method for manufacturing silver triangular pyramid particles including: forming an electric field in an electrolytic solution including silver ions and a surfactant to reduce the silver ions into silver triangular pyramid particles.

Method for manufacturing silver triangular pyramid particles and silver triangular pyramid particles

A method of manufacturing a semiconductor device includes: forming a cap insulating film, including Si and C, on a substrate; forming an organic silica film, having a composition ratio of the number of carbon atoms to the number of silicon atoms higher than that of the cap insulating film, on the cap insulating film; and forming two or more concave portions, having different opening diameters, in the organic silica film, by plasma processing in which mixed gas including inert gas, N-containing gas, fluorocarbon gas and oxidant gas is used.

Semiconductor device and method of manufacturing semiconductor device

Growing community of inventors

Kanagawa, Japan

Jun Kawahara