Mitsui Chemicals, Inc.

Mitsui Chemicals Tohcello, Inc.

Mitsui Chemicals Tehcello, Inc.

Jun Kamada

Kenichi Fujii

Kazuo Kohmura

Yasuhisa Kayaba

Takashi Unezaki

Kazuyuki Fukuda

Takashi Uchida

Jin Kinoshita

Akimitsu Morimoto

Shinji Tachibana

Kaichiro Haruta

Noboru Kawasaki

Shinichi Usugi

Hirokazu Mizuma

Masakazu Masui

Shoji Tamai

Satoshi Yamasaki

Takashi Kuroki

Kenichi Suzuki

Daisuke Hasegawa

Takuzo Aida

Akira Hasegawa

Goro Kuwamura

Michio Eriguchi

Kouya Kojima

Hideaki Otsuka

Yasufumi Tsuchiya

Naosuke Kunimoto

Kouji Igarashi

Tomoya Matayoshi

Yoichi Kodama

Kiyomi Imagawa

Makoto Sukegawa

Yuzo Nakamura

Ken-ichi Goto

A method of manufacturing a substrate layered body includes: a step of applying a bonding material to the surface of at least one of a first substrate or a second substrate; a step of curing the bonding material applied on the surface to form a bonding layer having a reduced modulus at 23° C. of 10 GPa or less; and a step of bonding the first substrate and the second substrate via the bonding layer formed.

Method of manufacturing substrate layered body and layered body

A body, comprising stacked substrates, wherein: a first substrate, an adhesion layer comprising a reaction product of a compound (A), which has a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom and which has a defined weight average molecular weight, and a crosslinking agent (B), which has three or more —C(═O)OX groups in a molecule, in which from one to six of the three or more —C(═O)OX groups are —C(═O)OH groups and which has a weight average molecular weight of from 200 to 600, X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms, and a second substrate, are layered in this order, and the compound (A) comprises at least one selected from the group consisting of a defined aliphatic amine and a defined compound having a siloxane bond and an amino group.

Substrate laminated body and method of manufacturing substrate laminated body

This method for producing a semiconductor device comprises: a first step wherein a plurality of semiconductor chips are affixed onto a supporting substrate such that circuit surfaces of the semiconductor chips face the supporting substrate; a second step wherein a plurality of sealed layers are formed at intervals by applying the sealing resin onto the semiconductor chips by three-dimensional modeling method, each sealed layer containing one or more semiconductor chips embedded in a sealing resin; a third step wherein the sealed layers are cured or solidified; and a fourth step wherein sealed bodies are obtained by separating the cured or solidified sealed layers from the supporting substrate.

Method for producing semiconductor device and intermediate for semiconductor device

Provided is a method of producing an electronic device, including a step of preparing a structure which includes an electronic component having a circuit forming surface, and an adhesive laminated film which includes a base material layer, an unevenness-absorptive resin layer, and an adhesive resin layer in this order and in which the adhesive resin layer is attached to the circuit forming surface of the electronic component such that the circuit forming surface is protected; and a step of forming an electromagnetic wave-shielding layer on the electronic component in a state of being attached to the adhesive laminated film.

Method of producing electronic device

A curable composition includes a blocked isocyanate in which an NCO group of an isocyanate compound having a HXDI skeleton is blocked by a blocking agent having an O&#x2550;C&#x2014;CH&#x2014;C&#x2550;O skeleton, a curable functional group-containing fluorine polymer, and an alkoxysilane having a functional group including at least one element of a group 15 element to a group 16 element of the periodic table (excluding oxygen). In the curable composition allowing a titanium oxide to be contained, the molar ratio of the curable functional group to the NCO group is 0.5 to 10; the content ratio of the alkoxysilane with respect to 100 pans by mass of the total amount of the blocked isocyanate and the fluorine polymer is 0.2 to 8 parts by mass; and the content ratio of the titanium oxide with respect to 100 parts by mass of the fluorine polymer is 0 to 200 parts by mass.

Curable composition, coating material, solar cell coating material, solar cell back sheet coating material, adhesive, solar cell adhesive, solar cell back sheet adhesive, producing method of sheet, and curing agent

Provided is a method of producing an electronic device, including a step of preparing a structure which includes an electronic component having a circuit forming surface, and an adhesive laminated film which includes a base material layer and an adhesive resin layer and in which the adhesive resin layer is attached to the circuit forming surface of the electronic component; a step of back-grinding a surface of the electronic component opposite to the circuit forming surface in a state of being attached to the adhesive laminated film; a step of dicing the electronic component in a state of being attached to the adhesive laminated film; and a step of forming an electromagnetic wave-shielding layer on the separated electronic components in a state of being attached to the adhesive laminated film, in this order.

Provided is an adhesive member including: a base material having an uneven shape on at least one surface; and a surface layer covering at least a portion of the surface having the uneven shape on the base material.

Adhesive member and production method for adhesive member

The blocked isocyanate is a blocked isocyanate containing a latent isocyanate group, which is an isocyanate group blocked with a blocking agent, wherein the blocked isocyanate includes a first latent isocyanate group that is an isocyanate group blocked with a first blocking agent and a second latent isocyanate group that is an isocyanate group blocked with a second blocking agent; and the first blocking agent is represented by general formula (1) below, and has a higher catalysis activity that activates the isocyanate group than that of the second blocking agent. (where R1 to R3 represent a hydrocarbon group having 1 to 12 carbon atoms or a hydrogen atom, and at least one of R1 to R3 represents a hydrogen atom, and R1 and R3 may be bonded to each other to form a heterocycle. R4 represents a hydrocarbon group having 1 to 12 carbon atoms, a hydrogen atom, or an atomic group represented by &#x2014;NRR(R5 and R6 represent a hydrocarbon group having 1 to 12 carbon atoms, and R5 and R1 may be bonded to each other to form a heterocycle and R6 and R3 may be bonded to each other to form a heterocycle).

Blocked isocyanate, coating composition, adhesive composition, and article

A method of healing an external wound involves applying an external wound-healing agent to an external wound, or bringing the external wound-healing agent applied to a substrate into contact with an external wound, wherein the external wound-healing agent includes, as an active ingredient, at least one compound of a glycerol alkyl ester represented by defined Formula (I) or a diglycerol alkyl ester represented by defined Formula (II). In a further embodiment, the method involves bringing a fiber aggregate or a film into contact with an external wound, wherein the fiber aggregate or the film each includes a thermoplastic resin and at least one compound of the glycerol alkyl ester or the diglycerol alkyl ester.

External wound-healing agent, and external wound-healing material

The purpose of the present invention is to provide a semiconductor substrate manufacturing method, which prevents detachment of a semiconductor wafer being ground, and which prevents cracking or chipping in a semiconductor substrate obtained. In order to solve the problem, the semiconductor substrate manufacturing method comprises: a polyimide layer forming step of forming a polyimide layer on a support material; a wafer attaching step of affixing the support material and a semiconductor wafer to each other with the polyimide layer disposed therebetween; a wafer grinding step of grinding the semiconductor wafer; a support material peeling step of peeling the support material from the polyimide layer; and a polyimide layer peeling step of peeling the polyimide layer from the semiconductor wafer. The polyimide layer includes polyimide which includes a benzophenone skeleton and an aliphatic structure, wherein an amine equivalent weight is 4000 to 20000.

Semiconductor substrate manufacturing method, semiconductor device, and method for manufacturing same

This semiconductor wafer surface protection film has a substrate layer A, an adhesive absorption layer B, and adhesive surface layer C, in the stated order. The adhesive absorption layer B comprises an adhesive composition containing a thermoset resin b1, said adhesive absorption layer B having a minimum value G'bmin of the storage elastic modulus G&#x2032;b in the range of 25&#xb0; C. to less than 250&#xb0; C. of 0.001 MPa to less than 0.1 MPa, a storage elastic modulus G&#x2032;b250 at 250&#xb0; C. of 0.005 MPa or above, and a temperature at which G&#x2032;bmin is exhibited of 50-150&#xb0; C. The adhesive surface layer C has a minimum value G&#x2032;cmin of the storage elastic modulus G&#x2032;c in the range of 25&#xb0; C. to less than 250&#xb0; C. of 0.03 MPa.

Semiconductor wafer surface protection film and method for manufacturing semiconductor device

An adhesive resin composition includes an expandable sticky polymer having a structure derived from a Meldrum's acid derivative, or a Meldrum's acid derivative represented by the following general formula (1) and an adhesive resin. 

Adhesive resin composition, laminate, and self-stripping method

Polyimides and polyamic acids

Growing community of inventors

Narashino, Japan

Jun Kamada