Asml Netherlands B.v.

Jun Jiang

Ning Ye

Jian Zhang

Chih-Yu Jen

Yixiang Wang

Yongjun Wang

Long Ma

A charged particle beam system may include a primary source, a secondary source, and a controller. The primary source may be configured to emit a charged particle beam along an optical axis onto a region of a sample. The secondary source may be configured to irradiate the region of the sample. The controller may be configured to control the charged particle beam system to change a parameter of an output of the secondary source. A method of imaging may include emitting a charged particle beam onto a region of a sample, irradiating the region of the sample with a secondary source, and changing a parameter of an output of the secondary source. A method of detecting defects may include inspecting a sample, generating a first defect distribution, and generating a second defect distribution.

Photo-electrical evolution defect inspection

Apparatuses, systems, and methods for providing beams for controlling charges on a sample surface of charged particle beam system. In some embodiments, a module comprising a laser source configured to emit a beam. The beam may illuminate an area adjacent to a pixel on a wafer to indirectly heat the pixel to mitigate a cause of a direct photon-induced effect at the pixel. An electron beam tool configured to detect a defect in the pixel, wherein the defect is induced by the indirect heating of the pixel.

Thermal-aided inspection by advanced charge controller module in a charged particle system

An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

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San Jose, CA, United States of America

Jun Jiang