Tokyo Ohka Kogyo Co., Ltd.

Tokyo Ohka Kogyo., Ltd.

Jun Iwashita

Takeshi Iwai

Kenri Konno

Hideo Hada

Satoshi Fujimura

Toshikazu Tachikawa

Ryoichi Takasu

Mitsuru Sato

Yoshiyuki Utsumi

Masaaki Yoshida

Taku Hirayama

Keita Ishiduka

Tomotaka Yamada

Toshikazu Takayama

Daiju Shiono

Daichi Takaki

Kensuke Matsuzawa

Sho Abe

Masatoshi Arai

Takahiro Dazai

Masahito Yahagi

Takeyoshi Mimura

Ayako Kusaka

Akiya Kawaue

Yoshitaka Komuro

Masaru Takeshita

Makiko Irie

Daisuke Kawana

Miwa Miyairi

Tatsuya Fujii

Shogo Matsumaru

Kenta Suzuki

Kazuhito Sasaki

Isamu Takagi

Kazushige Dohtani

Yuji Ohgomori

Yoshiyuki Utsume

Resist composition and method of forming resist pattern

A resist composition including a resin component which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the resin component including a resin component having a structural unit represented by a general formula (a0-0-1) shown below  in which R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, Rrepresents a single bond or a divalent linking group, each of R, Rand Rindependently represents a linear, branched or cyclic alkyl group which may have a non-aromatic substituent, or Rand Rmay be bonded to each other to form a ring together with the sulfur atom, and X represents a non-aromatic divalent linking group or a single bond.

Resist composition, method of forming resist pattern and polymeric compound

A compound represented by formula (I). In the formula, Rrepresents a hydrocarbon group of 1 to 10 carbon atoms; Z represents a hydrocarbon group of 1 to 10 carbon atoms or a cyano group; provided that Rand Z may be mutually bonded to form a ring; X represents a divalent linking group having any one selected from &#x2014;O&#x2014;C(&#x2550;O)&#x2014;, &#x2014;NH&#x2014;C(&#x2550;O)&#x2014; and &#x2014;NH&#x2014;C(&#x2550;NH)&#x2014; on a terminal that comes into contact with Q; p represents an integer of 1 to 3; Q represents a hydrocarbon group having a valency of (p+1), provided that, when p is 1, Q may be a single bond; Rrepresents a single bond, an alkylene group which may have a substituent or an arylene group which may have a substituent; q represents 0 or 1; r represents an integer of 0 to 8; and Arepresents a metal cation or an organic cation. 

Compound, radical polymerization initiator, method for producing compound, polymer, resist composition, and method for forming resist pattern

A resist composition including a base component containing a polymer (A1) having a structural unit (a5) containing a group represented by general formula (a5-0-1) or (a5-0-2), wherein the amount of the monomer that derives the structural unit (a5) is not more than 100 ppm relative to (A1). In the formulas, each of Qand Qrepresents single bond or divalent linking group, R, Rand Rrepresent organic groups, and Rand Rmay be bonded to each other to form a ring in combination with the sulfur atom, provided that &#x2014;R&#x2014;S(R)(R) has a total of only one aromatic ring or has no aromatic rings, Vrepresents a counter anion, Arepresents an organic group containing anion, and Mrepresents an organic cation having a valency of m, wherein m represents an integer of 1 to 3, provided that Mhas only one aromatic ring or has no aromatic rings. 

Resist composition for EUV or EB, and method of forming resist pattern

A resist composition which can form a very fine resist pattern with excellent lithography properties, a new polymeric compound useful for the resist composition, and a compound useful as a monomer for the polymeric compound. The resist composition contains a polymeric compound containing a structural unit (a0) represented by general formula (a0) shown below. In the formula (a0), A is an anion represented by the general formula (1) or (2). 

Resist composition, method of forming resist pattern, polymeric compound, and compound

A resist composition including a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the base component (A) including a resin component (A1) containing a structural unit (a0-1) having a group represented by general formula (a0-1) shown below and a structural unit (a1) derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the &#x3b1;-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid. 

A resist composition containing a base component (A) which generates an acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, wherein the base component (A) contains a copolymer (A1) having a structural unit (a0) containing a group represented by the following general formula (a0-1) or (a0-2), a structural unit (a11) containing an acid-decomposable group which exhibits increased polarity by the action of acid and contains a polycyclic group, and a structural unit (a12) containing an acid-decomposable group which exhibits increased polarity by the action of acid and contains a monocyclic group. Each of the groups &#x2014;R&#x2014;S(R)(R) and Min the formula has only one aromatic ring as a whole or has no aromatic ring. 

A resist composition including a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the base component (A) containing a polymeric compound (A1) including a structural unit (a0) represented by general formula (a0-1) shown below, a structural unit (a1) containing an acid decomposable group which exhibits increased polarity by the action of acid and a structural unit (a6) which generates acid upon exposure (wherein Rrepresents a hydrogen atom, an alkyl group or a halogenated alkyl group; W represents &#x2014;COO&#x2014;, &#x2014;CONH&#x2014; or a divalent aromatic hydrocarbon group; Yand Yrepresents a divalent linking group or a single bond; R'represents a hydrogen atom or an alkyl group of 1 to 6 carbon atoms; R&#x2032;represents a monovalent aliphatic hydrocarbon group; and Rrepresents an &#x2014;SO&#x2014; containing cyclic group). 

A resist composition containing a base component (A) which generates acid upon exposure, and exhibits changed solubility in a developing solution under the action of acid, wherein In the formula, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, Rrepresents a sulfur atom or an oxygen atom, Rrepresents a single bond or a divalent linking group, and Y represents a hydrocarbon group in which a carbon atom or a hydrogen atom may be substituted with a substituent.

Resist composition, method of forming resist pattern, and polymeric compound

Positive resist composition and method of forming resist pattern

The present invention provides a positive resist composition capable of forming a resist pattern with high resolution, and a method of forming a resist pattern. This composition is a positive resist composition including a resin component (A) which exhibits increased solubility in an alkali developing solution under action of acid, and an acid-generator component (B) which generates acid upon irradiation, the resin component (A) containing a polymer including: a core portion represented by general formula (1)[Chemical Formula 1]PX&#x2014;Y)&#x2003;&#x2003;(1)wherein P represents an a-valent organic group; a represents an integer of 2 to 20; Y represents an arylene group or an alkylene group of 1 to 12 carbon atoms; and X represents a specific linking group which can be cleaved under action of acid, and arm portions that are bonded to the core portion and are also composed of a polymer chain obtained by an anionic polymerization method.

A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under the action of acid and an acid generator component (B) which generates acid upon exposure, wherein the base component (A) includes a polymeric compound (A1) having a structural unit (a0) containing an acid-dissociable, dissolution-inhibiting group, and the acid-dissociable, dissolution-inhibiting group has a 1,3-dioxole skeleton.

Positive resist composition, method of forming resist pattern, polymeric compound, and compound

A positive resist composition including a base material component (A) that exhibits increased solubility in an alkali developing solution under action of an acid; and an acid generator component (B) that generates an acid upon exposure, wherein the base material component (A) includes a polymeric compound (A1) having a structural unit (a10) derived from hydroxystyrene and a structural unit (a11) represented by general formula (a11-1) shown below: 

A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

Resist composition

Disclosed is a method of forming a resist pattern, including: applying a positive resist composition on a supportto form a first resist film; selectively exposing the first resist filmthrough a first mask pattern, and developing it to form a first resist pattern; applying a negative resist composition including an organic solvent (S&#x2033;) containing an alcohol-based organic solvent on the supportthat the first resist patternis formed, thereby forming a second resist film; and selectively exposing the second resist filmthrough a second mask pattern, and developing it to form a resist pattern denser than the first resist pattern

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Kawasaki, Japan

Jun Iwashita