Kabushiki Kaisha Toyota Jidoshokki

Kabushiki Kaisha Toyoda Jidoshokki Seisakusho

Jun Ishikawa

Toshiaki Nagase

Hiroyuki Onishi

Kazuyoshi Kontani

Toshinari Fukatsu

Koichi Akagawa

Naohito Kanie

Hiroyuki Kobayashi

Takashi Nagashima

Kenichi Sofue

Hiromitsu Yoshiyama

Toshiaki Fukatsu

Takahiro Nakamura

A semiconductor unit includes a semiconductor chip, a ceramic substrate having a circuit pattern on which the semiconductor chip is mounted, and a temperature sensor for detecting a temperature. The semiconductor unit further includes a pressing member for retaining the temperature sensor by pressing against the ceramic substrate.

Semiconductor unit

An electronic unit includes a first circuit board having a power semiconductor device and an electrolytic capacitor and a second circuit board having an electronic component to control the power semiconductor device. The second circuit board is arranged perpendicular to the first circuit board and along the surface of the electrolytic capacitor. The electronic unit further includes a connecting member being jointed at one end thereof to the first circuit board and jointed at the other end thereof to the second circuit board for electrical connection between the first and second circuit boards.

Electronic unit

A power converter includes a base plate having thereon a switching device, and positive and negative conductors respectively including main portions disposed parallel to the base plate. One of the main portions is placed over the other of the main portions. The main portions are disposed adjacent to and parallel to each other. The main portions are insulated from each other. The power converter includes a capacitor having positive and negative terminals electrically connected to the respective main portions of the positive and negative conductors. Each of the positive and negative conductors includes a side portion extending from the main portion toward the base plate, and a terminal portion extending from the side portion and joined to the base plate. The side portion is formed with a cutout extending from the end adjacent to the base plate to the opposite end connected to the main portion.

Power converter

A power converter apparatus that includes a substrate, plate-like positive and negative interconnection members, capacitors, and a cover is disclosed. Pairs of groups of switching elements are mounted on the substrate. The cover is arranged over the substrate to encompass the switching elements, the positive interconnection member, the negative interconnection member, and the capacitor. The positive interconnection member and the negative interconnection member each have a terminal portion that is joined to a circuit pattern on the substrate by ultrasonic bonding.

Power converter apparatus

A power converter apparatus that includes a substrate, plate-like positive and negative interconnection members, and capacitors is disclosed. Pairs of groups of switching elements are mounted on the substrate. Each of the positive interconnection member and the negative interconnection member has a terminal portion. The terminal portion has a joint portion that is electrically joined to a circuit pattern on the substrate. The switching elements are arranged in the same number on both sides of the joint portion of at least the positive interconnection member of the positive and negative interconnection members.

A power converter apparatus includes a substrateon which switching elements Q, Qto Qare mounted, positive and negative terminal interconnection membersmounted on the substrate, and a capacitorhaving a positive terminalconnected to the main body of the positive terminal interconnection memberand a negative terminalconnected to the main body of the negative terminal interconnection member. The interconnection members each have a plate-like main bodythat is located above and parallel to the substrate. The main bodies of the interconnection members are stacked to be close to each other while being electrically insulated from each other. Each of the positive terminal interconnection member and the negative terminal interconnection member further includes a plate-like extensionthat extends from the corresponding main body toward the substrate, and a terminal portionthat extends from the extension and is joined to the substrate. The extensions extend to positions closest to the substrate, while being parallel to and close to each other.

The first external electrode has a main body portion a part of which is buried in a side wall of a case and joining portions protruding from an end of the main body portion toward the inside of the case. Each joining portion of the first external electrode is formed to have a thickness smaller than that of the main body portion, and an end portion of each joining portion is directly joined onto a wiring pattern of the insulating substrate through ultrasonic joining. Therefore, a load and ultrasonic vibration necessary for joining the joining portion onto the wiring pattern can be suppressed, which makes it possible to directly join the first external electrode onto the wiring pattern of the insulating substrate without damaging an insulating member of the insulating substrate.

Semiconductor device having semiconductor element with back electrode on insulating substrate

A first wiring member and a second wiring member, through which currents flow in directions opposite to each other, each have a flat plate shape and are arranged to be adjacent and opposed to each other, to thereby reduce inductances of the first wiring member and the second wiring member due to an effect of a mutual inductance. A joint of the first wiring member and a joint of the second wiring member are joined to the positive terminal and the negative terminal of the semiconductor device through ultrasonic bonding, respectively. As a result, the joint of the first wiring member and the joint of the second wiring member are not required to be provided with exclusive portions for screw mounting unlike a conventional manner, so each of the joints can have a small area, to thereby making it possible to reduce inductances of the first wiring member and the second wiring member.

Terminal connection structure for semiconductor device

A semiconductor apparatus is characterized in that it comprises a semiconductor module having a plurality of semiconductor elements and an external connection terminal for externally connecting electrodes of the semiconductor elements in the semiconductor module, wherein the semiconductor elements in each semiconductor module are connected in parallel and/or in series via the external connection terminal.

Semiconductor apparatus and production method thereof suitable for electric power devices

In a semiconductor apparatus in which a main current of a semiconductor device flows through a wiring pattern formed on an insulation circuit board, the rise in temperature of the wiring pattern is suppressed and the increase in cost of parts can be minimized. On the insulation circuit board, a copper pattern is formed. A heat spreader is soldered to the copper pattern, and the heat spreader is loaded with a semiconductor chip. An external electrode and the heat spreader are arranged to shorten the distance between the side of the external electrode and the side of the heat spreader.

Semiconductor apparatus

When a silicone gel is injected into a case, since the gel is liquid before curing, the gel attempts to rise along a minute gap formed between a front face of a first electrode and a rear face of a resin member due to capillary action. However, since the gap becomes larger at a cavity in the first electrode, the rising motion of the gel stops at the level of the cavity. More specifically, the gel is prevented from reaching portions of the first electrode and a second electrode for connection with external terminals. Further, since the rising motion of the gel can be prevented by the cavity, the first electrode and the second electrode can be arranged in a close relationship with each other.

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Kariya, Japan

Jun Ishikawa