Fujitsu Corporation

Yamaha Corporation

Fujitsu Display Technologies Corporation

Jun Inoue

Kenji Okamoto

Kiyoshi Ozaki

Satoru Kawai

Yoshio Dejima

Junichi Watanabe

Yukio Tada

Yasuhiko Asahi

Osamu Ohshima

Jun Usui

Nariyasu Hayakawa

Kenichi Oki

Yoshio Nagahiro

Masahiro Okabe

Teruhiko Ichimura

Tomotaka Matsumoto

Kazuki Takano

Mitsuki Arita

Naoki Yasuraoka

Mari Hodate

Miho Kyoya

Yuji Murata

Rie Ito

Keisuke Arii

Yukako Hioki

A computer-implemented information processing method includes receiving image information indicative of imagery of a first player using a musical instrument, and determining comment information indicative of a comment for the first player based on the image information.

Information processing method, information processing system, and recording medium

An acoustic device includes a member which divides an ear canal of a user and an external space when being attached to an ear or the ear canal of the user, a memory that stores instructions, and a processor that executes the instructions. The instructions cause the processor to perform, acquiring a sound signal indicating a sound, applying a filter processing to the acquired sound signal, the filter processing being changed in accordance with a predetermined condition, and radiating the sound indicated by the sound signal applied with the filter processing to the ear canal.

Acoustic device and acoustic processing method

A repairable integrated thin film transistor matrix substrate includes an insulated substrate, and a plurality of parallel gate bus lines and a plurality of accumulated capacitance bus lines formed on the insulated substrate. Each of the accumulated capacitance bus lines extend parallel to and between a pair of the gate bus lines, and has a plurality of auxiliary capacitance electrodes which extend from it. A first insulated film is provided on the gate and accumulated capacitance bus lines and the auxiliary capacitance electrodes. A plurality of operating films are formed on the first insulated film, and on each of the operating films, a corresponding thin film transistors are provided. At least two of the thin film transistors are electrically connected to each of the gate bus lines. Also included is a plurality of parallel drain bus lines which are provided substantially perpendicular to the gate and the accumulated capacitance bus lines on the first insulated film. Each drain bus line electrically connects at least two of the thin film transistors. In addition, a second insulated film having an opening over each of the thin film transistors is provided on the thin film transistors and the drain bus lines. Further, a plurality of pixel electrodes are provided on the second insulated film, which pixel electrodes being electrically connected to a corresponding one of the transistors via the opening. At least one first portion of at least one of the gate and the drain bus lines overlaps with at least one second portion of at least one of the auxiliary capacitance and the pixel electrodes. A method for repairing the matrix substrate generally includes electrically connecting a conductor to either sides of a defect to act as a bypass.

Repairable thin film transistor matrix substrate and method of repairing the substrate

Repairable thin film transistor matrix substrate having overlapping regions between auxiliary capacitance electrodes and drain bus

A crystal silicon film deposited on an insulating film made of a binary system material or a binary system semiconductor film formed by an atomic layer deposition method has a grain as large as approximately 200 nm. Thus, the mobility of carriers is increased. The crystal silicon thereof is grown within a temperature range of 250.degree. C. to 400.degree. C. Accordingly, when a planar type thin film transistor, an inverted stagger type thin film transistor or a stagger type thin film transistor is formed using crystal silicon formed on these films made of a binary system material, transistor characteristics thereof are improved. Further, when an impurity containing silicon film is formed by a chemical vapor deposition method between a source electrode and a drain electrode of a thin film transistor and a silicon film connected to these electrodes, and a flow rate of impurity containing gas is regulated so that impurity density becomes larger as approaching to the source electrode and the drain electrode, a leakage current in an OFF-state of the transistor is reduced. Since the impurity containing silicon film is grown by a chemical vapor deposition method in this case, the impurity density thereof can be controlled easily and the control accuracy is also improved.

Method for forming a film and method for manufacturing a thin film

Growing community of inventors

Kawasaki, Japan

Jun Inoue