Other

Research Development Corporation of Japan

Mitsubishi Electric Corporation

Zaidan Hojin Handotai Kenkyu Shinkokai

Kabushiki Kaisha Toyota Chuo Kenkyusho

National Institute of Information and Communications Technology, Incorporated Administrative Agency

Handotai Kenkyu Shinkokai

Handotal Kenkyu Shinkokai

Jun-ichi Nishizawa

Toru Kurabayashi

Hisao Kondoh

Tadahiro Ohmi

Yoshio Nakamura

Takashige Tamamushi

Kaoru Motoya

Kazuomi Ito

Masakazu Morishita

Toru Oizumi

Kyouzou Kanamoto

Susumo Sugiyama

An electromagnetic wave irradiation tool encompasses a narrow tube (endoscope probe) () defined by an outside diameter of 0.1 mm-20 mm, having an electromagnetic wave irradiation terminal () configured to irradiate an electromagnetic wave () having a frequency equal to a characteristic frequency of a microorganism () at the top of the narrow tube () and an electromagnetic wave generation unit () configured to generate the electromagnetic wave () and to supply the electromagnetic wave () to the electromagnetic wave irradiation terminal (). The electromagnetic wave irradiation tool drives the microorganism () into a resonant vibration state selectively so that the microorganism () can be destroyed, without giving damages to biological body () for medically treating the disease induced by the microorganism ().

Electromagnetic wave applicator

The ultra high-speed vertical short channel insulated-gate static induction transistor with uniform operating characteristic which has the drain layerconsisting of an epitaxial single crystal layer on the main surfaceof substrate, the channel layerwith thickness 1000 &#x212b; or less on the drain layer, the source layerconsisting of an epitaxial single crystal layer on the channel layer, and the insulated-gatesandon the sidewalls of the drain, the channel, and the source layers. Since the thickness of 1000 &#x212b; or less is accurately controlled using the molecular layer epitaxial method and the channel layeris grown up, the X-ray photolithography is not needed. Since the gate oxide film is formed by low temperature CVD using active oxygen, impurity re-distribution does not occur.

Short channel insulated-gate static induction transistor and method of manufacturing the same

A semiconductor device includes a substrate crystal of a type for epitaxial growth thereon. The substrate crystal has a (111)A face and a (111)B face. Also provided are at least two semiconductor regions of different conductivity types deposited by way of epitaxial growth on the (111)A face of the substrate crystal according to metal organic chemical vapor deposition, thereby providing a structure having a source and a drain. A gate side includes the (111)B face of the substrate crystal. A gate insulating layer is deposited by way of epitaxial growth on the gate side according to molecular layer epitaxy. Alternatively, the at least two semiconductor regions may be deposited on the (111)B face of the substrate crystal according to molecular layer epitaxy, and the gate insulating layer may be deposited on the (111)A face of the substrate crystal according to metal organic chemical vapor deposition.

Semiconductor device comprising a highspeed static induction transistor

In a method of epitaxially growing a compound crystal, a plurality of crystal component gasses of a compound and reaction gas chemically reacting with the crystal component gasses are individually directed, in the predetermined order, onto a substrate crystal heated under vacuum. The crystal compound gasses and the reaction gas may be overlapped with each other. In a doping method in the above-described epitaxial growth method, the crystal component gasses and the compound gas of dopant are directed onto the substrate crystal and, subsequently, reaction gas, which chemically reacts with the compound gasses, is directed onto the substrate crystal. Also in this case, the reaction gas may be in overlapped relation to the component gas of dopant.

Method of epitaxially growing compound crystal and doping method therein

Material and impurity gases are introduced into a crystal growth chamber to grow a crystal film on a GaAs substrate. A light beam emitted from a variable-wavelength light source is applied to the crystal film being grown on the substrate while varying the wavelength of the light beam. The dependency, on the wavelength of the light beam, of the intensity of light reflected by the crystal film is measured, and an optimum wavelength is selected for measurement depending on the type of molecules adsorbed while the crystal film is being grown. Light is then applied at the optimum wavelength to the crystal film being grown, and a time-dependent change in the intensity of light reflected by the crystal film is measured. The rate at which the material gases are introduced into the crystal growth chamber is adjusted to control the growth rate of the crystal film, the composition ratio of a mixed crystal thereof, and the density of the impurity therein.

Method of epitaxially growing semiconductor crystal using light as a

A double gate static induction thyristor comprises a semiconductor substrate, a first gate region formed at a first principal surface of the substrate, and a first semiconductor region of a first conduction type formed on the same first principal surface. A second gate region is formed at a second principal surface of the substrate, and a second semiconductor region of a second conduction type is formed on the same second principal surface. Gate electrodes are formed on the first and second gate regions, and main electrodes are formed on the first and second semiconductor regions, so that portions of the semiconductor regions surrounded by the gate regions form a current path between the main electrodes. Further, impurity is deeply diffused in portions of the first and second gate regions formed with the gate electrodes.

Double gate static induction thyristor

In a static induction type thyristor comprising a low impurity concentration channel region having opposed first and second major surfaces, a first main electrode region having one conductivity type and a second main electrode region having another conductivity type opposite to the one conductivity type and provided on the first and second major surfaces, respectively, and a gate region provided in the vicinity of the first main electrode region, there intervenes, between the channel region and the second main electrode region, a thin layer region having the same conductivity type as that of first main electrode region. The provision of this thin layer region contributes to allowing a markedly low impurity concentration as well as a decreased thickness of the channel region for a given maximum forward blocking voltage, making it feasible to obtain a high maximum forward blocking voltage and a high switching speed.

Static induction type thyristor

A double gate static induction thyristor comprises an n.sup.- semiconductor substrate having first and second principal surfaces opposite to each other. An n.sup.- epitaxial semiconductor layer is formed on the first principal surface of the substrate, and a p.sup.- epitaxial semiconductor layer is formed on the second principal surface of the substrate. A cathode electrode is deposited on the surface of the n.sup.- epitaxial layer, and an anode electrode is deposited on the surface of the p.sup.- epitaxial layer. In addition, a first gate electrode is formed on the first principal surface of the substrate, and a second gate electrode is formed on the second principal surface of the substrate.

Method of making double gate static induction thyristor

In a photothyristor provided with a cathode, a gate and an anode, the impurity densities of gate (base) portions 20 and 21 are made unequal to each other. The minority carriers are stored in the high impurity density regions 20, the majority carriers are permitted to readily pass through the low impurity density regions 21, and the high and low impurity density regions are electrically coupled together. This thyristor is extremely high in sensitivity and high-speed in operation.

Static induction photothyristor having a non-homogeneously doped gate

Double gate static induction thyristor and method for manufacturing the

A method of manufacturing a semiconductor device by the use of a Group II-VI compound semiconductor crystal prepared by liquid growth method using a temperature difference technique under controlled vapor pressure of the crystal-constituting Group VI element. Thus, the concentration of vacancies and other defects acting as donor is reduced as compared with the concentration of the p type impurity to be introduced. This invention is suitable for producing light-emitting diodes emitting a light of short-wave lengths.

Semiconductor device having a pn junction

Phototransistor having a non-homogeneously base region

In a semiconductor apparatus for controlling a large current at a high speed, a lead conductor coupled to a control electrode of a semiconductor device sealed in a package comprises a conductor plate having a width equal to or greater than one side or a diameter of the semiconductor device, thereby decreasing impedance against a high-frequency input signal.

Semiconductor apparatus

A method of manufacturing a semiconductor device having a single crystal pn junction formed in a Group II-VI compound semiconductor crystal, by: growing a Group II-VI compound semiconductor crystal substrate of n type from a melt of a crystal-constituting Group VI element other than Te; forming a crystal temperature difference in the melt which applying a vapor pressure of the Group VI element onto the melt; forming, on the substrate, a semiconductor region of p type by diffusing an acceptor impurity into the n type crystal under a predetermined vapor pressure of the constituent Group VI element. Thus, it becomes possible to provide light-emitting diodes emitting green, blue-green or violet color region if ZnSe crystals are used.

Method of manufacturing a group II-VI compound semiconductor device

A pressurized contact type double gate static induction thyristor comprising a semiconductor body located in a casing and having cathode electrodes and a first gate electrode at one principal surface side thereof and anode electrodes and a second gate electrode at the other principal surface side thereof. A first thermal expansion stress buffer plate is located in the casing to be in contact with the cathode electrode, and a second thermal expansion stress buffer plate is located at the other principal surface side of the semiconductor body. This second plate is composed of at least two metal members electrically insulated from each other and integrally bonded by an insulating material, one of the two metal members being in contact with the anode electrode and the other metal member being in contact with the second gate electrode.

Growing community of inventors

Miyagi, Japan

Jun-ichi Nishizawa