Nippon Telegraph and Telephone Corporation

Jun-ichi Nakano

Hidefumi Mori

Fumihiko Kobayashi

Takeo Miyazawa

Take Miyazawa

An optical semiconductor device includes an optical semiconductor element, a semiconductor region, and a buried layer. The optical semiconductor element is formed on a semiconductor substrate. The semiconductor region opposes the optical semiconductor element and essentially surrounds the optical semiconductor element to form walls. The buried layer is arranged between the walls of the semiconductor region and the optical semiconductor element and formed by vapor phase epitaxy. In this optical semiconductor device, a distance between the wall of the semiconductor region and a side wall of the optical semiconductor element is larger in a portion in which the growth rate of the vapor phase epitaxy in a horizontal direction from the side wall of the optical semiconductor element and the wall of the semiconductor region is higher.

Growing community of inventors

Kanagawa, Japan

Jun-ichi Nakano