Nec Corporation

Asahi Kasei Microdevices Corporation

Jun-ichi Matsuda

Shuntaro Yamazaki

Wataru Domon

A field effect transistor and a semiconductor device are provided which enable a drain breakdown voltage in an off state and a drain breakdown voltage in an on state to be improved respectively. There are provided therein a field oxide film disposed on an N-type drift region positioned between a channel region of a silicon substrate and an N-type drain, an N-type drift layer disposed beneath the drift region of the silicon substrate and the drain, and an embedded layer higher in P-type impurity concentration than the silicon substrate. The embedded layer is disposed beneath the drift layer except for below at least a portion of the drain in the silicon substrate.

Field effect transistor and semiconductor device

In a mobile communication network, a controlling node receives capability information from a mobile terminal, indicating positioning methods supported by the mobile terminal and selectability of the positioning methods. In response to a location request message from a client terminal requesting the location information of a target mobile terminal, the controlling node transmits a first control message via a wireless node to the target mobile terminal, containing a copy of requested accuracy of the location information, if the capability information indicates that the target mobile terminal is capable of selecting positioning methods. The mobile terminal performs measurement according to a positioning method that satisfies the requested accuracy. Otherwise, the controlling transmits a second control message to the mobile terminal, specifying a positioning method. In this case, the mobile terminal performs measurement according to the specified positioning method.

Location system and method for operating mobile terminal as a responsible location for selecting a positioning method

In a speed converter for an IEEE-1394 serial bus network, first and second communication device nodes are attached to first and second buses. A first transceiver node receives an inbound first packet at a first speed from the first bus and transmits an inbound second packet, which is received from the second bus by a second transceiver node at a second speed, as an outbound second packet at the first speed to the first bus. The second transceiver node transmits the inbound first packet as an outbound first packet at a second speed to the second bus. Header translation circuitry translates the destination identifier of the inbound first packet to the destination identifier of the outbound first packet according to a mapped relationship between the first transceiver node and the second communication node, and translates the destination identifier of the inbound second packet to the destination identifier of the outbound second packet.

Speed converter for IEEE-1394 serial bus network

In a device information acquisition method, it is discriminated whether a network is constituted by a plurality of buses or a single bus. A bus ID assigned to each of remote buses is acquired. Device information is acquired from each of devices connected to the network. When at least one of the remote buses is disconnected from the network, the device information of the device connected to the disconnected remote bus is discarded. If it is discriminated that the network is constituted by a single bus, the information of all devices connected to the local bus is acquired. If it is discriminated that the network is constituted by a plurality of buses, the information of all devices connected to each of the buses having the acquired bus ID is acquired. A device controller and bridges using the device information acquisition method are also disclosed.

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Tokyo, Japan

Jun-ichi Matsuda