Canon Kabushiki Kaisha

Dai Nippon Printing Co., Ltd.

Nec Corporation

Jun-Ichi Hanna

Isamu Shimizu

Masaaki Hirooka

Masahiro Kanai

Shunichi Ishihara

Keishi Saitoh

Hiroki Maeda

Masanori Akada

Masao Ueki

Akira Sakai

Yoshiyuki Osada

Hiroyuki Tokunaga

Eiji Takeuchi

Ken Tomino

Hiroaki Iino

Teppei Shimakawa

Kunihiko Shiota

Shinobu Sakurada

Hiroki c/o Dai Nippon Printing Co Ltd Maeda

Masanori c/o Dai Nippon Printing Co Ltd Akada

There are provided an organic semiconductor material, which can constitute an organic semiconductor layer having homogeneous and a high level of charge transfer characteristics over a large area, and an organic semiconductor structure and an organic semiconductor device utilizing the organic semiconductor material. The organic semiconductor material comprises a polymeric compound and a monomeric compound, the polymeric compound having, in a part of its side chain, a core structure comprising a predetermined &#x3c0; electron ring, the monomeric compound having a core structure comprising a predetermined &#x3c0; electron ring, the monomeric compound having, in at least one of its both ends, a terminal group capable of developing liquid crystallinity.

Organic semiconductor material, organic semiconductor structure, and organic semiconductor device

An organic semiconductor material having high charge mobility characteristics and an organic semiconductor element is provided. The organic semiconductor material has rodlike low-molecular liquid crystallinity, including a skeleton structure comprising L 6 &#x3c0; electron aromatic rings, M 10 &#x3c0; electron aromatic rings, and N 14&#x3c0; electron aromatic rings, wherein L, M, and N are each an integer of 0 (zero) to 4 and L+M+N=1 to 4; and a terminal structure attached to both ends of the skeleton structure. The terminal structure can develop liquid crystallinity. The phase angle &#x3b8; of impedance of the organic semiconductor material is &#x2212;80&#xb0;&#x2266;&#x3b8;&#x2266;&#x2212;90&#xb0; as determined in the measurement of impedance in a frequency f range of 100 Hz&#x2266;f&#x2266;1 MHz in such a state that the organic semiconductor material in an isotropic phase state is held between a pair of opposed substrates with an interelectrode spacing of 9 &#x3bc;m.

Organic semiconductor material and organic semiconductor element

There is provided a liquid crystalline material, suitable for use as an organic semiconductor material, in which, even when the charge transport distance is long, the charge transport capability is satisfactory, the charge mobility is high, and the dependence of the charge transport properties upon field strength is small. The organic semiconductor material having rodlike low-molecular weight liquid crystallinity comprises: a core structure comprising L 6 &#x3c0; electron rings, M 8 &#x3c0; electron rings, N 10 &#x3c0; electron rings, O 12 &#x3c0; electron rings, P 14 &#x3c0; electron rings, Q 16 &#x3c0; electron rings, R 18 &#x3c0; electron rings, S 20 &#x3c0; electron rings, T 22 &#x3c0; electron rings, U 24 &#x3c0; electron rings, and V 26 &#x3c0; electron rings, wherein L, M, N, O, P, Q, R, S, T, U, and V are each an integer of 0 (zero) to 6 and L+M+N+O+P+Q+R+S+T+U+V=1 to 6; and a terminal structure attached to at least one end of the core structure, the terminal structure being capable of developing liquid crystallinity.

Organic semiconductor material

There are provided an organic semiconductor structure comprising an organic semiconductor layer, which is large in size and homogeneous and has high charge transfer characteristics, a process for producing the same, and an organic semiconductor device. The organic semiconductor structure has, in at least a part thereof, an organic semiconductor layer comprising an aligned liquid crystalline organic semiconductor material. The liquid crystalline organic semiconductor material comprises an organic compound having a core comprising L 6 &#x3c0; electron rings, M 8 &#x3c0; electron rings, N 10 &#x3c0; electron rings, O 12 &#x3c0; electron rings, P 14 &#x3c0; electron rings, Q 16 &#x3c0; electron rings, R 18 &#x3c0; electron rings, S 20 &#x3c0; electron rings, T 22 &#x3c0; electron rings, U 24 &#x3c0; electron rings, and V 26 &#x3c0; electron rings, wherein L, M, N, O, P, Q, R, S, T, U, and V are each an integer of 0 (zero) to 6 and L+M+N+O+P+Q+R+S+T+U+V=1 to 6. The liquid crystalline organic semiconductor material exhibits at least one liquid crystal state at a temperature below the heat decomposition temperature thereof.

Organic semiconductor structure, process for producing the same, and organic semiconductor device

Polycrystalline silicon-germanium alloy is grown on a glass substrate through a chemical vapor deposition under the conditions where the substrate temperature ranges from 350 degrees to 450 degrees in centigrade, the ratio between gas flow rate of Si.sub.2 H.sub.6 and the gas flow rate of GeF.sub.4 ranges from 20:0.9 to 40:0.9 and the dilution gas is selected from the group consisting of helium, argon, nitrogen and hydrogen, and the composition ratio of silicon of the polycrystalline silicon-germanium is equal to or greater than 80 percent so that the carrier mobility is drastically improved.

Process of growing polycrystalline silicon-germanium alloy having large

An apparatus for forming a deposited film which includes a film forming chamber, with a means to evacuate the inside of the chamber. A substrate holder for holding a substrate is located in the chamber. Starting material gas is supplied to the chamber to enable film formation. A light energy source is also provided to irradiate the substrate in order to heat its surface. The strength of the light energy is controlled to provide a non-uniform temperature distribution pattern on the substrate.

Apparatus for forming crystalline film

A method of forming a crystalline compound semiconductor film comprises introducing into a crystal forming space housing a substrate on which a non-nucleation surface (S.sub.NDS) having a smaller nucleation density and a nucleation surface (S.sub.NDL) having a fine surface area sufficient for crystal growth only from a single nucleus and having a larger nucleation density (ND.sub.L) than the nucleation density (NDs) of the non-nucleation surface (S.sub.NDS) are arranged adjacent to each other an organometallic compound (VI) for supplying an element belonging to the group VI of Periodic Table represented by the general formula R.sub.1 --X.sub.n --R.sub.2 wherein n is an integer of 2 or more; R.sub.1 and R.sub.2 each represent alkyl; and X is S, Se or Te and a compound (II) for supplying an element belonging to the group II of Periodic Table in gas phase and applying crystal growth treatment according to the vapor phase method to the substrate to selectively form a crystalline group II-VI compound semiconductor film on the substrate.

Method of forming crystalline compound semiconductor film

A process for forming a deposition film comprises introducing a gaseous starting material for forming a deposition film and a gaseous oxidizing agent having an oxidation action on the gaseous starting material separately into a reaction space to chemically contact these two, thereby generating a plurality of precursors including precursor in an excited state, and utilizing at least one of the generated precursors as a supply source for film-constituting members, thereby forming a deposition film on a substrate provided in a film-forming space, the deposition film being formed while supplying a bias energy to the substrate and changing the intensity of the bias energy.

Process for forming a deposited film by reacting between a gaseous

There is disclosed a device for forming a deposited film which forms a deposited film by bringing a gaseous starting material for formation of a deposited film into contact with a gaseous oxidizing agent having the property of oxidation action on said starting material, thereby causing a chemical reaction to occur, comprising a plural number of chambers for formation of a deposited film connected to one another, said chamber having a gas releasing means having an orifice for releasing said gaseous starting material and an orifice for releasing said gaseous oxidizing agent provided respectively on both wall surfaces opposed to each other, and a support setting means which is arranged so that at least a part of its constitution may be included within the plane formed by linking mutually the gas releasing means on the both wall surfaces.

Device for forming deposited film

Device for forming a deposited film

An apparatus for forming a deposited film by introducing two or more kinds of gaseous starting materials for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting materials into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming a deposited film in a plurality of layers with different compositions on a substrate existing in a film forming space spatially communicated with said reaction space with the use of at least one precursor of the precursors as the feeding source for the constituent element of the deposited film, said apparatus comprising a plural number of gas introducing means of a multiple tubular structure for discharging into said reaction space said gaseous starting materials and said gaseous halogenic oxidizing agent through the discharging outlets, respectively, and permitting them to react with each other to form the precursors and means for preventing contact of precursors unnecessary for the desired film formation of the precursors with the substrate.

Apparatus for forming deposited film

A method for forming a crystalline film comprises respectively introducing into a film forming space having a substrate arranged therein a gaseous starting material for formation of the crystalline film and a gaseous halogenic oxidizing agent capable of chemically reacting with the starting material to form the film, the substrate having a surface comprised of a non-single crystal material having a predetermined temperature distribution.

Method for forming crystalline film employing localized heating of the

There is disclosed a device for forming a deposited film on a substrate through utilization of chemical reaction between a gaseous starting material for a film to be formed and a gaseous halogenic oxidizing agent which has one or more gas introducing means having a multi-tubular structure with a converted tip end or having a meeting space for both the gases.

A method for forming a deposited film, which comprises introducing a gaseous starting material containing an element in the Group II of the periodic table, a starting material containing an element in the Group VI of the periodic table which are gasifiable for formation of a deposited film, and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting materials into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursor of said precursors as the feeding source for the constituent element of the deposited film.

Method for forming deposited films of group II-VI compounds

A method for forming a thin film multi-layer structure member having at least one of at least one kind of a semiconductor thin film controlled in valence electron and a semiconductor thin film regulated in band gap comprises the step of forming at least one layer of the semiconductor thin films on a substrate by energizing a heat-generating member constituted of either a single substance or an alloy of a transition metal element having the catalystic effect provided in a film forming space to effect heat generation, bringing a starting material (A) for deposited film formation containing at least one element of halogens and hydrogen in the molecule and a compound (B) containing an element which becomes at least one of the valence electron controller and the band gap regulator into contact with the heat-generating member under heat generating state to cause a thermal dissociation reaction to effect activation, thereby forming a precursor (X) which becomes the starting material for deposited film formation and using the precursor (X) as the feeding source for the constituent element of the thin film, and the step of forming at least one layer of other thin films by introducing a gaseous starting material (a) for deposited film formation and a gaseous halogenic oxidizing agent having the property of oxidation action for the starting material (a) into a reaction space to effect contact therebetween to thereby form chemically a plural number of precursors including precursors under excited state and using at least one precursor of the precursors as the feeding source for the constituent element of the deposited film.

Growing community of inventors

Yokohama, Japan

Jun-Ichi Hanna