Nec Corporation

Jun-ichi Fujita

Masahiko Ishida

Yukinori Ochiai

Hiroo Hongo

Shinji Matsui

Yoshitake Ohnishi

Alessandro Casnati

Rocco Ungaro

Fujio Shimizu

Shoko Manako

Andrea Pochini

Toshinari Ichihashi

Arturo Arduini

Shinji Matui

An amorphous carbon rod () is formed in contact with a catalyst fine particle (). The fine particle () is liquefied by heat treatment, and moved along the amorphous carbon rod (). The trail of the movement is converted to a carbon nanotube.

Method of producing a carbon nanotube and a carbon nanotube structure

A metal fine particle is adhere to a predetermined location on a substrate. A resist film containing a metallic compound dispersed therein is formed on a substrate (). A patterning of the resist film is conducted by a lithography. The substrate () having the patterned resist formed thereon is heated within an oxygen atmosphere to adhere a metal fine particle () to the surface of the substrate (), while removing the resin in the patterned resist.

Method for fixing metal particles and method for manufacturing substrate containing metal particles, method for manufacturing substrate containing carbon nanotube, and method for manufacturing substrate containing semiconductor-crystalline rod, employing thereof

In a magneto-resistance effect device including a plurality of magnetic dots each of which is formed by magnetic material on a substrate and appears a magneto-resistance effect by applying an external magnetic field, the magnetic dots are arranged on the substrate in a two-dimensional array. The two-dimensional array has a plurality of rows along a column direction and a plurality of columns along a row direction. The magnetic dots include at least first magnetic dots and second magnetic dots. The first magnetic dots are arranged on first rows while the second magnetic dots are arranged on second rows. The first magnetic dot is different from the second magnetic dot in shape.

Magneto-resistance effect device and method of manufacturing the same

The method for forming a fine pattern on a substrate disclosed includes a step of preparing a hologram having a pattern, a step of irradiating material waves (de Broglie waves) such as neutral beams, ion beams and electron beams on the hologram, and a step of imaging the pattern on the substrate with the material waves being interfered by passing through the hologram. The light source has a source that emits a beam having a coherent wave front. Since the fine patterns are formed by utilizing the interference of material waves, the minimum processing precision can be enhanced to the extent of the wavelength of the material wave.

Method and system for forming fine patterns using hologram

A hologram is made up from a one-dimensional or two-dimensional slit array, each slit being formed with an electrode pair or electric wire for generating an electric field or magnetic field within the slit. These electric fields or magnetic fields are each set for each slit so as to confer upon an atomic beam passing through the slits a phase shift corresponding to the target hologram reproduced image, thereby allowing the target hologram image to be easily reproduced by directing the atomic beam perpendicular to the hologram surface. A two-dimensional reproduced image can be obtained by means of a one-dimensional slit array by shifting the reproduction substrate for each one-dimensional reproduced image obtained, or a three-dimensional pattern image can be reproduced by means of a two-dimensional slit array by successively changing the focal length and stacking on a preceding two-dimensional reproduced image the next two-dimensional reproduced image each time a two-dimensional reproduced image is obtained and repeating this procedure.

Atomic beam pattern forming method using atomic beam holography

A resist film consisting of 5,11,17,23,29,35-hexachloromethyl-37, 38,39,40,41,42-hexamethoxycalix�6!arene sensitive to a high-energy beam and soluble to a solvent is formed on a substrate etchable by a dry etching, has a selective region thereof exposed to the high-energy beam, with a remaining region unexposed thereto, and developed to define a pattern on the substrate, as the remaining region is removed by the solvent, before the substrate with the pattern is subjected to the dry etching. A nanometric patterning and etching is permitted, with a reduced process time.

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Tokyo, Japan

Jun-ichi Fujita