Canon Kabushiki Kaisha

Mitsubishi Materials Corporation

Jun Iba

Masanori Ogura

Hisanobu Azuma

Akira Tsuboyama

Kazunori Katakura

Taro Kato

Kazunari Kawabata

Daisuke Akagi

Atsushi Furubayashi

Zempei Wada

Toru Koizumi

Takanori Watanabe

Yasushi Koyama

Hiroko Takada

Shinjiro Okada

Takao Takiguchi

Tatsuya Suzuki

Takanori Suzuki

Takahiro Sato

Yasuo Ohashi

Satoko Iida

Noriyuki Kaifu

Yutaka Inaba

Takashi Enomoto

Kazuaki Tashiro

Takeaki Itsuji

Atsushi Mizutome

Takeshi Uchida

Seishi Miura

Koichiro Iwata

Takeshi Kojima

Masanori Takahashi

Shigeyuki Matsumoto

Masahiro Fushimi

Nobutaka Ukigaya

Toshiyuki Yoshihara

Toshifumi Yoshioka

Takehito Okabe

Takahiro Hachisu

Eiichi Takami

Hiroshi Ikakura

Yoshinori Tateishi

Katsumi Komiyama

Toshiharu Sumiya

Kouhei Hashimoto

Akira Hayama

Kazuyasu Hikita

Tamayo Hiroki

Hiroo Akabori

Itsutaku Sano

Kazuya Igarashi

Rei Kurashima

Fumiaki Mizutani

Hiroyuki Iizuka

Tomoko Narusawa

Yoshiaki Uesu

Shota Shigemori

An imaging apparatus includes: a detector configured to detect a surface position of an object by receiving a second electromagnetic wave of which wavelength is shorter than a first electromagnetic wave; a focusing device configured to collect the first electromagnetic wave reflected on the object; at least one memory and at least one processor which function as a control unit configured to control the focusing device such that a position based on the surface position is focused on; and an image sensor configured to image the object using the first electromagnetic wave collected by the focusing device.

Imaging apparatus, method for controlling imaging apparatus, and non-transitory computer readable storage

A radiation detector includes a plurality of pixels configured to directly convert a radiation into an electric charge, a reading circuit configured to read pixel signals from the plurality of pixels for each frame, and a processing unit configured to process the pixel signals read by the reading circuit, wherein the processing unit is configured to determine a background component contained in a pixel signal of each of the plurality of pixels by using values of the pixel signals read from the plurality of pixels in a frame in which the pixel signal whose background component is to be determined is read.

Radiation detector, radiation imaging system, radiation image processing method, and storage medium

A processing system comprising a first imaging system configured to capture a first image based on a terahertz wave from an inspection target, a second imaging system configured to capture a second image of the inspection target based on an electromagnetic wave of a wavelength different from the terahertz wave, and a processor configured to process the first image and the second image, wherein the processor detects an inspection region based on the second image and processes information of a region of the first image corresponding to the inspection region.

Processing system

In a line sensor including color filters that are periodically disposed in a light-receiving-element row, a problem called a 'mixture of colors' occurs. A 'mixture of colors' occurs when light that has been transmitted through a color filter differing from a color filter corresponding to a light receiving element is incident upon the light receiving element. In a CMOS sensorincluding a light-receiving-element row in which a plurality of photodiodesare disposed side by side in a main scanning direction and a plurality of color filtersthat are disposed in correspondence with the plurality of photodiodes, the center of each color filteris displaced in a direction of the center of the light-receiving-element row from the center of the photodiodecorresponding to the color filter.

Line sensor, image reading device, and image forming apparatus

A semiconductor element which oscillates or detects a terahertz wave, the semiconductor element comprising: a first electrode; a semiconductor layer having a gain of the terahertz wave; a second electrode which forms a mesa structure together with the semiconductor layer; a third electrode; a fourth electrode; a first dielectric layer which is in contact with the third electrode and which surrounds the mesa structure; and a second dielectric layer which is arranged between the first electrode and the fourth electrode, which surrounds the third electrode, and which is made of a different material from the first dielectric layer, wherein the first electrode, the semiconductor layer, the second electrode, the third electrode, and the fourth electrode are stacked in this order from a side of the substrate in a direction perpendicular to the substrate, and a predetermined mathematical expression is satisfied.

Semiconductor element for oscillating or detecting terahertz wave and manufacturing method of semiconductor element

A receiver which is configured to detect a terahertz wave incident on a first surface of a substrate, the receiver comprising: an antenna which is provided on the first surface of the substrate and is configured to receive the terahertz wave; and a through electrode which is electrically connected to the antenna and penetrates the substrate from the first surface to a second surface, the second surface being opposite to the first surface, wherein the through electrode is separated from the antenna by a distance that is 0.25 times a resonance wavelength or more.

Receiver for detecting a terahertz wave and image forming apparatus

An imaging device includes a first substrate in which a plurality of first pixels each including a first light receiving unit and a light emitting unit that emits light with a light amount in accordance with a light amount detected by the first light receiving unit are provided, and a second substrate that is provided facing the first substrate and in which a plurality of second pixels each including a second light receiving unit that detects a light emitted from the light emitting unit of the first pixel and a readout circuit that outputs an image signal based on information detected by the plurality of second pixels are provided.

Imaging device and imaging system

A photoelectric conversion apparatus includes a semiconductor substrate including recessed portions and insulators disposed on the respective recessed portions. The semiconductor substrate includes a first-conductivity-type first semiconductor region, a second-conductivity-type second semiconductor region that is of a conductivity type different from the first-conductivity-type and that is formed in the first semiconductor region, a second-conductivity-type third semiconductor region in contact with the second semiconductor region on a surface of the semiconductor substrate, and a first-conductivity-type fourth semiconductor region that includes the recessed portions. The second semiconductor region and the third semiconductor region are surrounded by the fourth semiconductor region on the surface of the semiconductor substrate. The insulators on the recessed portions extend through the fourth semiconductor region and are in contact with the first semiconductor region.

Photoelectric conversion apparatus and image-reading apparatus

An aspect of the disclosure relates to a semiconductor device including a semiconductor element, a connection terminal configured to output a signal based on an output of the semiconductor element, a protection circuit connected to the connection terminal, and a voltage limiting element connected to the connection terminal, wherein the protection circuit is connected to a first power supply line having a first potential and a second power supply line having a second potential lower than the first potential, and wherein a potential supplied to the voltage limiting element is higher than the second potential and lower than the first potential.

Semiconductor device, semiconductor system, and electronic apparatus

In a line sensor including color filters periodically disposed in a light-receiving-element row, a 'mixture of colors' problem occurs when light that has been transmitted through a color filter differing from a color filter corresponding to a light receiving element is incident upon the light receiving element. To prevent the 'mixture of colors' from occurring, in a CMOS sensorincluding a light-receiving-element row in which a plurality of photodiodesare disposed side by side in a main scanning direction and a plurality of color filtersthat are disposed in correspondence with the plurality of photodiodes, the center of each color filter, other than the center color filter that corresponds to the center photodiode of the light-receiving-element row, is displaced in a direction toward the center of the light-receiving-element row from the center of the photodiodecorresponding to the color filter.

A photoelectric conversion apparatus has light receiving elements disposed on an imaging plane. The light receiving element includes a plurality of photoelectric conversion portions arrayed in a first direction parallel to the imaging plane, across an isolation portion, and a light guide portion extending over the plurality of photoelectric conversion portions. In a first plane which is parallel to the imaging plane and which traverses the light guide portion, a greatest width of the light guide portion in the first direction is larger than a greatest width of the light guide portion in a second direction parallel to the imaging plane and orthogonal to the first direction.

Photoelectric conversion apparatus and imaging system

An image pickup device includes a pixel region having a plurality of pixels that are two-dimensionally arranged, the plurality of pixels including a plurality of image pickup pixels and a plurality of focus detection pixels capable of phase difference detection; a plurality of microlenses arranged to correspond to respective photoelectric conversion units of respective image pickup pixels; and a plurality of microlenses arranged to correspond to respective photoelectric conversion units of the respective focus detection pixels. When at least one of the plurality of microlenses is orthogonally projected onto the corresponding photoelectric conversion unit, a vertex position of the at least one microlens is off a center position of the at least one microlens.

Image pickup device and image pickup system

A photoelectric conversion device includes a pixel array including pixels arranged in rows and columns, each of the pixels being configured to output a pixel signal, and including an optical filter and a photoelectric conversion unit, wherein the optical filters of different colors are arranged for each rows and each columns, a holding circuit including first holding units for each of the columns, the first holding units being configured to respectively hold the pixel signals read out from the pixels including the optical filters of different colors in one column of the pixel array in parallel, an output signal line, and a readout circuit configured to successively read out the pixel signals of pixels including the optical filters of the same color from the first holding units for each of the columns to the output signal line.

Photoelectric conversion device having a holding circuit with a plurality of holding units provided for each of a plurality of columns of pixels and method of driving photoelectric conversion device

A photoelectric conversion apparatus includes a semiconductor substrate having one principle surface including recessed portions, and insulation bodies in the recessed portions. The semiconductor substrate includes photoelectric conversion elements each of which includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the second conductivity type which has at least a portion disposed nearer to the principle surface relative to the second semiconductor region. The second semiconductor region has a polarity of signal charge. The second semiconductor region is in contact with the first and third semiconductor regions. Signal charge paths are disposed between the recessed portions in a cross section perpendicular to the principle surface. At least one of the second and third semiconductor regions is positioned in directions of at least two of the signal charge paths.

Photoelectric conversion apparatus and image reading apparatus

Growing community of inventors

Yokohama, Japan

Jun Iba