Samsung Display Co., Ltd.

Industry-University Cooperation Foundation Hanyang University

Yonsei University

Lumens Co., Ltd.

Samsung Displayco., Ltd.

Kookmin University

Lg Semicon Co., Ltd.

Postech Research and Business Development Foundation

Dongguk University Industry-academic Cooperation Foundation

Industry-Academic Cooperation Foundation, Dankook University

Bse Co., Ltd.

Jun Hyung Lim

Joon Seok Park

Kyung Jin Jeon

Yeon Keon Moon

Kyoung Seok Son

Hyung Jun Kim

So Young Koo

Eok Su Kim

Myoung Hwa Kim

Jay Bum Kim

Tae Sang Kim

Seung Hun Lee

Seung Jun Lee

Myeong Ho Kim

Hye Lim Choi

Geun Chul Park

Sang Woo Sohn

Masataka Kano

Yun Yong Nam

Sun Hee Lee

Hyungjun Kim

Ji Hun Lim

Jaybum Kim

Byung Du Ahn

Kyoung Won Lee

Yeon Hong Kim

Eun Hyun Kim

Seungjun Lee

Seunghun Lee

Myounghwa Kim

Soyoung Koo

Jin Seong Park

Eun Hye Ko

Seung Hoon Lee

Seung Hyun Oh

Saeroonter Oh

Kyungjin Jeon

SunHee Lee

Myeongho Kim

Young Joon Choi

Pyoung Gug Kim

Jung A Lim

Su Hyun Kim

Bo Hyun Chung

Cheol Hun Jung

Chun Ki Min

Dae Hwan Kim

Je Hun Lee

Hyun Jae Kim

Taesang Kim

Sangwoo Sohn

Yeonhong Kim

Geunchul Park

Jae Hyeong Kim

Yunyong Nam

Hyun Kwang Jung

Jiazhen Sheng

Tae Hyun Hong

Whang Je Woo

Jin Su Park

Gun Hee Kim

Sung-Hoon Yang

Sangho Park

Sangwon Shin

Sang Won Shin

Kyung Suk Kim

Young Jun Kim

Yong-Young Noh

Hyelim Choi

Jee-Hun Lim

Kwang Suk Kim

Min Seong Kim

Kwang Sik Jeong

Ji Hwan Lee

Kihwan Kim

Kano Masataka

Huihui Zhu

Sung-Ho Park

Ju Sang Park

Seung Gi Seo

Hyuk Joon Yoo

Sae Roon Ter Oh

Duck Kyun Choi

Kwun-bum Chung

Hyun Min Hong

Cheong-Dam Song

Eek-Joo Chung

Hyun-Ho Kim

A thin-film transistor includes a light-shielding layer disposed on a substrate, an oxygen supply layer disposed on the light-shielding layer and including a metal oxide, a buffer layer disposed on the substrate and covering the oxygen supply layer, an active layer disposed on the buffer layer, where the active layer includes a channel area overlapping the light-shielding layer, and a first electrode area and a second electrode area respectively in contact with opposing sides of the channel area, a gate insulating layer disposed on the channel area of the active layer.

Thin-film transistor, thin-film transistor array substrate, and method for manufacturing thin-film transistor

A display device includes a first conductive layer including a first voltage line and a second voltage line, a buffer layer, a semiconductor layer including a first active layer and a second active layer, a first gate insulating layer, a second conductive layer including a first gate electrode overlapping the first active layer and a second gate electrode overlapping the second active layer, a passivation layer, a via layer, a bank pattern layer including a first bank pattern and a second bank pattern partially spaced apart from each other, a third conductive layer including a first electrode and a second electrode spaced apart from each other, and light emitting elements. The passivation layer includes silicon nitride (SiN), and a ratio of a number of silicon-hydrogen bonds (Si—H) to a number of nitrogen-hydrogen bonds (N—H) in the silicon nitride (SiN) is in a range of about 1:0.6 to about 1:1.5.

Display device and method of fabricating the same

Provided is a defect analysis device which may include a light source that irradiates an analysis target layer of an element with light, a position adjuster that adjusts a position in the analysis target in the analysis target to be irradiated with the light, a detector that measures a current value of current flowing between a source area of the element electrically connected to one end of the analysis target layer and a drain area of the element electrically connected to the other end of the analysis target layer in the element, and an analyzer that acquires quantitative data related to a defect in the analysis target layer on the basis of the current value in which, in a first mode, a plurality of areas of the analysis target layer are sequentially irradiated with the light.

Defect analysis device and defect analysis method using the same

A display device according to an embodiment includes a light blocking layer disposed on a substrate; an oxygen supply layer disposed on and contacting the light blocking layer; a semiconductor layer disposed on the oxygen supply layer; and a light emitting diode electrically connected with the semiconductor layer. The semiconductor layer includes an oxide semiconductor, and the oxygen supply layer includes a metal oxide that includes at least one of indium, zinc, gallium, and tin.

Display device

A display device includes a substrate, a first active layer on the substrate, a first insulation layer on the first active layer, a first gate electrode on the first insulation layer, the first gate electrode overlapping the first active layer, a second insulation layer on the first gate electrode, a second active layer on the second insulation layer, a first capacitor electrode on the second insulation layer, the first capacitor electrode overlapping the first gate electrode, a third insulation layer on the second active layer and the first capacitor electrode, a second gate electrode on the third insulation layer, the second gate electrode overlapping the second active layer, and a second capacitor electrode on the third insulation layer, the second capacitor electrode overlapping the first gate electrode and electrically connected to the first capacitor electrode.

Display device and method of manufacturing display device

A display device includes a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and including a first capacitor electrode at least partially overlapping the first semiconductor layer in a plan view to constitute a first transistor, a second capacitor electrode disposed on the first conductive layer and overlapping the first capacitor electrode in a plan view to constitute a first capacitor, a second semiconductor layer disposed on the second capacitor electrode and including a third capacitor electrode overlapping the second capacitor electrode in a plan view to constitute a second capacitor, a second conductive layer disposed on the second semiconductor layer and at least partially overlapping the second semiconductor layer, and a third conductive layer disposed over the second conductive layer to implement a high-resolution image by overlapping the first capacitor electrode, the second capacitor electrode, and the third capacitor electrode.

Display device and method of manufacturing the same

A display device includes a first lower electrode disposed on a base substrate, a first upper electrode disposed on the first lower electrode, overlapping the first lower electrode in a plan view, including a silicon semiconductor, and constituting a first capacitor together with the first lower electrode, a second lower electrode disposed on the first upper electrode, and a second upper electrode disposed on the second lower electrode, overlapping the second lower electrode in a plan view, including an oxide semiconductor, and constituting a second capacitor together with the second lower electrode.

Pixel circuit having increased capacitance and display device including the same

A display device includes a display area and a functional area defining a through-portion therein. At least a portion of the functional area is surrounded by the display area. The display device includes an insulation layer disposed on a base substrate and defining a disconnection portion in the functional area, a pixel array disposed on the base substrate in the display area, and a mask pattern including a metal oxide and extending along the disconnection portion in a plan view.

A display device comprises a substrate; a driving transistor including a first active layer and a switching transistor including a second active layer, the first active layer and the second active layer being disposed on the substrate; a first gate insulating layer disposed on the first active layer of the driving transistor and the second active layer of the switching transistor; first and second gate electrodes disposed on the first gate insulating layer to overlap the first active layer of the driving transistor and the second active layer of the switching transistor, respectively; a first interlayer insulating layer disposed on the first gate electrode and the second gate electrode; and a second interlayer insulating layer disposed on the first interlayer insulating layer to overlap the first active layer without overlapping the second active layer in a plan view.

Method for manufacturing display device including second interlayer insulating layer overlapping active layer of driving transistor and not overlapping active layer of switching transistor

Provided is display device comprising a substrate; a first semiconductor layer disposed on the substrate and having a plurality of transistors; a second semiconductor layer disposed on the first semiconductor layer and having a plurality of transistors; a first data conductive layer disposed on the second semiconductor layer; a first metal layer disposed on the first data conductive layer; and a second metal layer disposed on the first metal layer, wherein the first metal layer includes a first storage electrode and a first input electrode, the second metal layer includes a second storage electrode and a second input electrode, the first storage electrode and the second storage electrode configure a storage capacitor, and the first input electrode and the second input electrode configure an input capacitor.

A thin film transistor includes a gate electrode, an insulating layer disposed on the gate electrode, and an active layer disposed on the insulating layer, where the active layer includes a perovskite compound represented by the following Formula: ABC[XY], where A is a monovalent organic cation, a monovalent inorganic cation, or any combination thereof, B is Sn, C is a divalent cation or trivalent cation, X is a monovalent anion, Y is a monovalent anion different from X, u is a real number greater than 0 and less than 1, and v is a real number greater than 0 and less than 1.

Thin film transistor comprising a low lead content halide anion perovskite and display device including the thin film transistor

A display device includes a first transistor including a first transistor including a light blocking pattern on a substrate, an active pattern on the light blocking pattern, and a gate electrode on the active pattern, a second transistor configured to provide a data voltage to the first transistor in response to a gate signal, and a storage capacitor electrically connected to the gate electrode and the light blocking pattern, and including a first conductive pattern in a same layer as the light blocking pattern, a second conductive pattern on the first conductive pattern and overlapping the first conductive pattern, a third conductive pattern in a same layer as the gate electrode, overlapping the second conductive pattern, and electrically connected to the first conductive pattern, and a fourth conductive pattern on the third conductive pattern, overlapping the third conductive pattern, and electrically connected to the second conductive pattern.

A display device according to an embodiment of the present disclosure includes: a substrate; a first conductive layer on the substrate; a first insulating layer on the first conductive layer; an active pattern on the first insulating layer and including a semiconductor material; a second insulating layer on the active pattern; and a second conductive layer on the second insulating layer, wherein the first insulating layer has a first opening exposing the first conductive layer, the second insulating layer has a second opening exposing the first conductive layer, a breadth of the first opening is different than a breadth of the second opening, and a side surface of the first opening and a side surface of the second opening are formed to a top surface of the first conductive layer.

Display device and manufacturing method thereof

A display device includes a first conductive layer disposed on a substrate, a passivation layer disposed on the first conductive layer, a second conductive layer disposed on the passivation layer, a via layer disposed on the second conductive layer, a third conductive layer disposed on the via layer, the third conductive layer including a first electrode, a second electrode, a connection pattern, the first electrode, the second electrode, and the connection pattern being spaced apart from each other, and a light emitting element, a first end and a second end of the light emitting element being disposed on the first electrode and the second electrode, respectively, wherein the connection pattern electrically connects the first conductive layer and the second conductive layer through a first contact hole penetrating the via layer and the passivation layer.

A display device includes first banks on a substrate and spaced apart from each other, a first electrode and a second electrode on the first banks and spaced apart from each other, a first insulating layer on the first electrode and the second electrode, and light emitting elements on the first insulating layer and each having ends on the first electrode and the second electrode. Each of the first banks includes a first pattern portion including concave portions and convex portions. The first pattern portions of the first banks are disposed on side surfaces of the first banks. The side surfaces are spaced apart and face each other. Each of the first electrode and the second electrode includes a second pattern portion on the first pattern portion and having a pattern shape corresponding to the first pattern portion on a surface thereof.

Growing community of inventors

Seoul, South Korea

Jun Hyung Lim