Sk Innovation Co., Ltd.

Jun-Hyung Kim

Young-Keun Lee

Tae-Hee Kim

Hong You

Sung-Jae An

Provided are a compound, including metal atoms for forming metal nano particles through a simple process within a short time at a low production cost for commercial purposes, and a solution including the compound.

Solution for fabricating nano particles

Provided are a method for fabricating nano structures which includes: preparing a substrate; preparing a polymer including a plurality of metal atoms; applying the polymer to the substrate to attach the metal atoms onto the substrate; and making one or more metallic nano particles from the metal atoms.

Nano structures, device using the same, and method for fabricating the nano structures

A non-volatile memory device includes a charge trapping layer for trapping charges. The charge trapping layer includes a linker layer formed over a substrate and including linkers to be bonded to metal ions metallic nanoparticles formed out of the metal ions over the linker layer and a nitride filling gaps between the metallic nanoparticles.

Non-volatile memory device including charge trapping layer

A non-volatile memory device includes a floating gate for charging and discharging of charges over a substrate. The floating gate comprises a linker layer formed over the substrate and including linkers to be bonded to metal ions and metallic nanoparticles formed out of the metal ions over the linker layer.

Non-volatile memory device including nano floating gate

Provided are a nano structure, a fabrication method thereof, and an application device thereof. The method for fabricating a nano structure includes: forming a substrate; forming a plurality of linkers over the substrate; forming a plurality of metal ions over the linkers; and forming one or more metallic nanoparticles over the linkers.

Method for fabricating a nano structure

A transistor and a fabrication method thereof. A transistor includes a channel region including linkers, formed on a substrate, and a metallic nanoparticle grown from metal ions bonded to the linkers, a source region disposed at one end of the channel region, a drain region disposed at the other end of the channel region opposite of the source region, and a gate coupled to the channel region and serving to control migration of at least one charges in the channel region.

Single electron transistor

A transistor and a fabrication method thereof. A transistor includes a channel region including linkers, formed on a substrate, and metallic nanoparticles grown from metal ions bonded to the linkers, a source region disposed at one end of the channel region, a drain region disposed at the other end of the channel region opposite of the source region, and a gate coupled to the channel region and serving to control migration of charges in the channel region. The metallic nanoparticles have a substantially uniform pattern arrangement in the channel region.

Single electron transistor having nanoparticles of uniform pattern arrangement

Provided is a nano structure including dielectric particle supporters, a fabrication method thereof, and an application device thereof. The method for fabricating a nano structure includes: forming a plurality of dielectric particle supporters over a substrate, the dielectric particle supporters including linkers thereon; forming a plurality of metal ions to the linkers; and forming one or more metallic nanoparticles over the linkers.

Method for fabricating NANO structure including dielectric particle supporters

Provided is a sensor having a nanostructure as a sensing element and a fabrication method thereof. The sensor includes a nanostructure as a sensing element for sensing a marker over a substrate, wherein the nanostructure includes: a linker layer, including linkers, bonded to the substrate; and metallic nanoparticles grown from metal ions bonded to the linkers.

Sensor including nanostructure and method for fabricating the same

Provided are a nano structure, a fabrication method thereof, and an application device using the same. The nano structure includes: a substrate; a plurality of linkers formed over the substrate; and one or more metallic nanoparticles grown from a plurality of metal ions bonded to the linkers. In the nano structure, metallic nanoparticles may have an average particle diameter of about 0.5 to 3.0 nm.

Nano structure

Provided are a nano structure, a fabrication method thereof, and an application device using the same. The nano structure includes a substrate; a dielectric particle supporter having a surface, wherein the dielectric particle supporter is formed over the substrate, and a linker bonded to the surface of the dielectric particle supporter; and a metallic nanoparticle bonded to the linker.

Growing community of inventors

Daejeon, South Korea

Jun-Hyung Kim