Samsung Display Co., Ltd.

Ltcam Co., Ltd.

Jun-Hyuk Woo

Jin-Ho Ju

Bong-Yeon Kim

Jeong-Won Kim

Min Hyuck Kang

Hyun-Joo Lee

Tae-Gyun Kim

Seung-Bo Shim

Chul-Won Park

Seok-Ho Lee

Kwang-Woo Park

Dong-Eon Lee

Jung-Hwan Song

Seong-Sik Jeon

Jong-Su Han

Dong-Min Kim

Sang-uk Lim

Gwui-Hyun Park

Yong Hoon Son

Eun Jeagal

Jong-kwang Lee

Joo-Kyoung Park

Won-Young Lee

A cleaning composition includes about 0.01 to about 5 wt % of a chelating agent; about 0.01 to about 0.5 wt % of an organic acid; about 0.01 to about 1.0 wt % of an inorganic acid; about 0.01 to about 5 wt % of an alkali compound; and deionized water.

Cleaning composition and method of manufacturing metal wiring using the same

A photo mask includes a transparent substrate and a mask pattern. The mask pattern is disposed on the transparent substrate. The mask pattern includes a blocking portion for blocking light and a transmitting portion for transmitting the light. The transmitting portion is adjacent to the blocking portion. The blocking portion includes a first blocking layer, a photo guide layer and a second blocking layer. The first blocking layer is disposed on the transparent substrate. The first blocking layer transmits a portion of the light. The first blocking layer includes a plurality of blocking patterns including a first blocking material. The photo guide layer is disposed on the first blocking layer. The photoguide layer guides the transmitted portion of the light to a side surface of the photoguide layer. The second blocking layer reflects the transmitted portion of the light.

Photo mask and method of manufacturing the same

According to an exemplary embodiment of the present invention, a photomask includes a transparent substrate and a polarizing pattern. A polarizing pattern is disposed on a transparent substrate. The polarizing pattern polarize light.

Photo mask and method of manufacturing thin film transistor using the same

A phase shift device includes a phase shift mask which includes a transparent substrate, and a phase shift pattern which is provided on the transparent substrate, and includes a first area having a first thickness, a second area having a second thickness which is less than the first thickness, a first opening having a first opening width and defined at the first area, and a second opening having a second opening width and defined at the second area.

Phase shift mask, patterning method using the same and method of manufacturing display panel using the same

A mask may include a circuit area and a pixel area. The circuit area includes a circuit pattern. The pixel area includes a pixel pattern which is extended in a length direction and an assist pattern which is at an end portion of the pixel pattern and adjacent to the circuit area.

Mask having assist pattern

A method of forming a metal pattern is disclosed. In the method, a metal layer is formed on a base substrate. A photoresist composition is coated on the metal layer to form a coating layer. The photoresist composition includes a binder resin, a photo-sensitizer, a mercaptopropionic acid compound and a solvent. The coating layer is exposed to a light. The coating layer is partially removed to form a photoresist pattern. The metal layer is patterned by using the photoresist pattern as a mask.

Photoresist composition and method of forming a metal pattern using the same

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Yongin-si, South Korea

Jun-Hyuk Woo