Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Jun-hyeok Yang

Gyu-Hyeong Cho

Hyun-Sik Kim

Young-Hun Sung

Sang-Wook Han

Se-Ki Kim

Sang-Ho Kim

Kwang-Ho Kim

Tae-Hwang Kong

Jun-han Choi

Sung-yong Lee

Yong-jin Lee

Chang-jung Kim

Young Shin Kim

Jae-chul Park

Hyung-Jong Ko

Se-ra An

Young-Hoon Sung

A semiconductor device for monitoring a reverse voltage is provided. The semiconductor device includes an intellectual property having an input node and an output node; a passive component connected between the output node and a potential; a monitoring circuit connected to the input node and the output node and powered by a driving power, the monitoring circuit monitoring a difference between an input level at the input node and an output level at the output node to detect a reverse voltage across the intellectual property. The driving power is provided by the output node.

Semiconductor device for monitoring a reverse voltage

A semiconductor chip includes a semiconductor circuit layer and a semiconductor thermoelectric layer disposed on a substrate. The circuit layer includes a first circuit and a second circuit disposed horizontally in a first direction. The thermoelectric layer includes a first on-die thermoelectric element, where the thermoelectric layer is disposed on the circuit layer including the first circuit and the second circuit. The first on-die thermoelectric element is configured to distribute heat generated at the first circuit horizontally in the first direction toward the second circuit.

Semiconductor chip and electronic system including the same

An apparatus for distinguishing an energy band of a photon in a readout circuit that counts photons in multi-energy radiation incident onto a sensor for each energy band includes an integrator configured to accumulate an electric signal received from the sensor that has undergone photoelectric conversion from the photon; a comparator configured to compare an accumulated electric signal received from the integrator with one of a plurality of threshold values; and a signal processor configured to instruct sequential switching from one of the plurality of threshold values to another one of the plurality of threshold values according to a result of a comparison received from the comparator; and output a digital signal that distinguishes an energy band of the photon based on results received from the comparator of sequential comparisons of the accumulated electric signal with the plurality of threshold values.

Apparatus and method for distinguishing energy bands of photons in multi-energy radiation

According to example embodiments, an image sensor includes a charge sensing amplifier configured to amplify charges sensed by a sensing unit. The charge sensing amplifier includes an input terminal, an amplification terminal, an output terminal, a first capacitor connected between the input terminal and the amplification terminal, a first switch connected between the input terminal and the amplification terminal, a second capacitor connected between the amplification terminal and the output terminal, and a second switch connected between the output terminal and a reference voltage terminal.

Image sensor and X-ray image sensing module including the same

A switching circuit, a charge sense amplifier, and a photon counting device are provided. The switching circuit configured to close and open a connection between a first terminal and a second terminal of a predetermined circuit element, includes: a first transistor comprising a source connected to the first terminal, a drain connected to the second terminal, and a gate; a second transistor comprising a drain, a source, and a gate connected to the drain of the second transistor; a current source configured to supply a current flowing through the drain and the source of the second transistor, to generate a gate voltage of the gate of the second transistor; and a multiplexer configured to receive the gate voltage, a reference voltage, and a control signal, and selectively apply the gate voltage or the reference voltage to the gate of the first transistor based on the control signal.

Switching circuit, charge sense amplifier including switching circuit, and photon counting device including switching circuit

Growing community of inventors

Daejeon, South Korea

Jun-hyeok Yang