Samsung Electronics Co., Ltd.

Jun-hwan Oh

Gyou-Hwan Kim

Kyung-jin Kim

Soon-ho Kim

Dong-cho Maeng

Gwang-Eun Kim

Sang-min Lee

Bong-joo Kim

Woo-Jae Kim

Hong-Seong Son

Jai-Jin Lim

Ju-hyuck Chung

Sung-Kwan Kim

Seon-Goo Hwang

Sang-Hoon Ryu

Yu-Gun Kim

Mi-ae Wi

A method of performing an uncontrolled handover data integrity of a target Base Station (BS) is provided. The method includes receiving an initial access request message from a Mobile Station (MS) by the target BS, performing a negotiation for establishing a handover data integrity path with a serving BS through a serving Access Service Network-Gateway (ASN-GW) by the target BS, and generating a main data path and a first handover data integrity path with the serving ASN-GW according to a result of the negotiation by the target BS.

Method for securing handover data integrity in mobile communication system and system thereof

An apparatus and a method for setting a group communication session using a wireless access system are provided. The method includes transmitting, at a transmission side client, a message requesting start/end of group communication to a control Push To Talk (PTT) server, transmitting, at the control PTT server, a session set/end message including a sequence number to a participating PTT server, multicasting, at the participating PTT server, a connect/disconnect request message N times for at least one reception side client, and setting/releasing, at the at least one reception side client, a session for the group communication.

Apparatus and method for preventing excessive signaling overhead while a group communication is performed in a broadband wireless access system

There are provided a method for managing neighbor Base Station (BS) information in a mobile communication system, and a system thereof. A femto Access Service Network-Gateway (ASN-GW) controls at least one femto BS, manages scan information that an MS served by a macro BS requires in measuring at least one signal strength by scanning the at least one femto BS, creates the scan information in a format of Downlink Channel Descriptor (DCD) and Uplink Channel Descriptor (UCD) information, and transmits the scan information to the macro BS. The macro BS periodically broadcasts neighbor BS information of the femto BS, which includes the scan information, to MSs in its coverage using a Neighbor Advertisement (NBR-ADV) message.

Method for managing neighbor base station information in mobile communication system and system thereof

A system and method for performing paging in an area where a macro Base Station (BS) and a femto Access Services Network (ASN) are linked in a mobile network are provided. The method includes, during handover of a Mobile Station (MS) between a macro ASN and a femto ASN, a first gateway of a current ASN acquires paging group information of a previous ASN. Upon request for paging from the MS in the current ASN, the first gateway requests a BS of the previous ASN to transmit paging information to the MS based on the paging group information of the previous ASN. By doing so, paging success rate may be improved for an MS in coverage of a macro ASN linked to a femto BS, and the high paging success rate may be guaranteed regardless of whether the handover scheme is a controlled handover scheme or an uncontrolled handover scheme.

Paging method in area where macro ASN and femto ASN are linked in mobile network, and system therefor

A method of manufacturing a semiconductor element, includes forming a lower metal wiring layer and an interlayer insulating film on a substrate, forming an opening through the interlayer insulating film, such that the opening is in communication with an upper surface of the lower metal wiring layer, cleaning the opening, forming a metal wiring line protecting film in the opening, such that the metal wiring line protecting film covers the lower metal wiring layer, washing the opening to remove the metal wiring line protecting film, such that a top surface of the lower metal wiring layer is exposed, and drying the substrate.

Method of manufacturing a semiconductor element

A semiconductor device and a method of fabricating the same are disclosed. The semiconductor device includes a lower wire, an interlayer insulating film formed on the lower wire and having a via hole exposing the upper surface of the lower wire, a diffusion barrier formed on the inner wall of the via hole, and an upper wire filling the via hole and directly contacting the lower wire, in which a dopant region containing a component of the diffusion barrier is formed in the lower wire in the extension direction of the via hole.

Method of fabricating a semiconductor device with a dopant region in a lower wire

Semiconductor device with a dopant region in a lower wire

Growing community of inventors

Seongnam-si, South Korea

Jun-hwan Oh