Up Chemical Co., Ltd.

Jun Hwan Choi

Jin Sik Kim

Dae-Young Kim

Myeong Ho Kim

Won Seok Han

Myeong-Ho Park

Sungwoo Ahn

Byung Kwan Kim

Mi Hee Lee

In Jae Lee

Yun Gyeong Yi

The present disclosure relates to an aluminum compound, an aluminum-containing film-forming precursor composition including the aluminum compound, and a method of preparing an aluminum-containing film using the aluminum-containing film-forming precursor composition.

Aluminum precursor compound, production method therefor, and aluminum containing layer forming method using same

The present application relates to a silicon precursor compound, a method for preparing the silicon precursor compound, a precursor composition for depositing a silicon-containing oxide thin film or nitride thin film, the precursor composition comprising the silicon precursor compound, and a method for depositing a silicon-containing oxide thin film or nitride thin film using the precursor composition.

Silicon precursor compound, preparation method therefor, and silicon-containing film formation method using same

The present disclosure relates to a novel Group 5 metal compound, a method for preparing the Group 5 metal compound, a precursor composition for depositing a Group 5 metal-containing layer containing the Group 5 metal compound, and a method for depositing a Group 5 metal-containing layer using the precursor composition for depositing a Group 5 metal-containing layer.

Group 5 metal compound, method for preparing the same, precursor composition for depositing layer containing the same, and method for depositing layer using the same

Growing community of inventors

Goyang-si, South Korea

Jun Hwan Choi