Seoul Viosys Co., Ltd.

Jun Ho Yun

Ki Bum Nam

Joon Hee Lee

Chang Youn Kim

Chae Hon Kim

Chang Suk Han

Hong Jae Yoo

Seung Chul Park

Woo Chul Gwak

Sung Hoon Hong

Si Hoon Lyu

Described herein is a semiconductor light emitting device. The semiconductor light emitting device comprises: an n-type semiconductor layer; a V-pit formed through at least part of the n-type semiconductor layer; an active layer disposed on the n-type semiconductor layer and filling the V-pit; and a p-type semiconductor layer disposed on the active layer, wherein the active layer includes a plurality of layers and part of the plural layers has a flat shape on the V-pit.

Semiconductor light emitting device

Disclosed herein is a high efficiency light emitting diode. The light emitting diode includes: a semiconductor stack positioned over a support substrate; a reflective metal layer positioned between the support substrate and the semiconductor stack to ohmic-contact a p-type compound semiconductor layer of the semiconductor stack and having a groove exposing the semiconductor stack; a first electrode pad positioned on an n-type compound semiconductor layer of the semiconductor stack; an electrode extension extending from the first electrode pad and positioned over the groove region; and an upper insulating layer interposed between the first electrode pad and the semiconductor stack. In addition, the n-type compound semiconductor layer includes an n-type contact layer, and the n-type contact layer has a Si doping concentration of 5 to 7&#xd7;10/cmand a thickness in the range of 5 to 10 um.

High efficiency light emitting diode

Growing community of inventors

Ansan-si, South Korea

Jun Ho Yun