Samsung Electronics Co., Ltd.

Jun-ho Jeong

Jang-Eun Lee

Se-Chung Oh

Kyung-tae Nam

Woo-Jin Kim

Hee-Ju Shin

Suk-Hun Choi

Woo-chang Lim

Kyung-Hyun Kim

Tae-Hyun Kim

Hyun-Jo Kim

Yong-Hwan Ryu

Young-Hyun Kim

Seung-yeol Lee

Yi-Koan Hong

Ki-Ho Bae

Dae-Kyom Kim

Jea-Hyoung Lee

A magnetic memory layer and a magnetic memory device including the same, the magnetic memory layer including a first seed layer; a second seed layer on the first seed layer, the second seed layer grown according to a &#x3c;002&#x3e; crystal direction with respect to a surface of the first seed layer; and a main magnetic layer on the second seed layer, the main magnetic layer grown according to the &#x3c;002&#x3e; crystal direction with respect to a surface of the second seed layer.

Magnetic memory layer and magnetic memory device including the same

A method of fabricating a magnetic tunnel junction structure includes forming a magnetic tunnel junction layer on a substrate. A mask pattern is formed on a region of the second magnetic layer. A magnetic tunnel junction layer pattern and a sidewall dielectric layer pattern on at least one sidewall of the magnetic tunnel junction layer pattern are formed by performing at least one etch process and at least one oxidation process multiple times. The at least one etch process may include a first etch process to etch a portion of the magnetic tunnel junction layer using an inert gas and the mask pattern to form a first etch product. The at least one oxidation process may include a first oxidation process to oxidize the first etch product attached on an etched side of the magnetic tunnel junction layer.

Method for forming magnetic tunnel junction structure and method for forming magnetic random access memory using the same

A semiconductor device includes an interlayer insulating layer disposed on a substrate, the interlayer insulating layer comprising an opening exposing the substrate, a barrier layer pattern disposed within the opening, and a conductive pattern disposed on the barrier layer pattern, the conductive pattern having an oxidized portion extending out of the opening and a non-oxidized portion within the opening, wherein a width of the conductive pattern is determined by a thickness of the barrier layer pattern.

Semiconductor device having a conductive structure including oxide and non oxide portions

An example embodiment relates to a method of forming a pattern structure, including forming an object layer on a substrate, and forming a hard mask on the object layer. A plasma reactive etching process is performed on the object layer using an etching gas including a fluorine containing gas and ammonia (NH) gas together with oxygen gas to form a pattern. The oxygen gas is used for suppressing the removal of the hard mask during the etching process.

Methods of forming pattern structures

A method of fabricating a semiconductor device, the method including providing a substrate; forming an underlying layer on the substrate; forming a sacrificial layer on the underlying layer; forming an opening in the sacrificial layer by patterning the sacrificial layer such that the opening exposes a predetermined region of the underlying layer; forming a mask layer in the opening; forming an oxide mask by partially or completely oxidizing the mask layer; removing the sacrificial layer; and etching the underlying layer using the oxide mask as an etch mask to form an underlying layer pattern.

Method of fabricating semiconductor device

A magnetic memory device and a method of fabricating the same. The magnetic memory device includes a free layer, a write element, and a read element. The write element changes the magnetization direction of the free layer, and the read element senses the magnetization direction of the free layer. Herein, the write element includes a current confinement layer having a width smaller than the minimum width of the free layer to locally increase the density of a current flowing through the write element.

Magnetic memory device and method of fabricating the same

A method for forming a minute pattern includes depositing a material layer on a semiconductor substrate having a conductive region, forming a first mask layer on the material layer, forming a recess region in the first mask layer, performing layer processing to form a first mask pattern in the recess region, and etching the material layer to form a material layer pattern.

Method for forming minute pattern and method for forming semiconductor memory device using the same

A magnetic memory device includes a pinning layer, a pinned layer, an insulation layer, which are sequentially stacked on a semiconductor substrate. The magnetic memory device further includes a free layer disposed on the insulation layer, a capping layer disposed on the free layer and an MR (magnetoresistance) enhancing layer interposed between the free layer and the capping layer. The MR enhancing layer is formed of at least one anti-ferromagnetic material.

Growing community of inventors

Suwon-si, South Korea

Jun-ho Jeong