Samsung Electronics Co., Ltd.

Jun-Ho Jeon

Jang-Eun Lee

Se-Chung Oh

Kyung-Tae Nam

A nonvolatile memory device includes a first electrode and a second electrode, and a variable resistor interposed between the first and second electrodes. The variable resistor has a critical voltage, and a resistance-voltage characteristic of the variable resistor is switched at a voltage higher than the critical voltage, so that a resistance of the variable resistor is higher at a read voltage applied after the switching of the resistance-voltage curve than at a read voltage applied before the switching of the resistance-voltage curve. Methods of operating a nonvolatile memory device include setting a plurality of write voltages higher than an initial critical voltage, assigning respective data values to states in which a resistance-voltage characteristic is switched at the write voltages, setting a read voltage lower than the initial critical voltage, and reading the data values by measuring current flowing through the variable resistor in response to the read voltage.

Growing community of inventors

Gyeonggi-do, South Korea

Jun-Ho Jeon