Hyundai Motor Company

Kia Corporation

Kia Motors Corporation

Jun Hee Park

Hyeon Uk Kim

Hyun Koo Lee

Sung Won Park

Myung Ill You

Nam Sik Kong

Sang Cheol Shin

Kang Ho Jeong

Woo Yong Jeon

Tae Hwa Kim

Jeong Min Son

A power module and a manufacturing method includes a chip; an upper substrate provided above the chip and formed with a circuit pattern; a lower substrate provided below the chip and formed with a circuit pattern; and a spacer including a plurality of metal portions electrically connecting at least two among the chip, the upper substrate and the lower substrate to transmit an electrical signal, and an insulating portion positioned between the plurality of metal portions and insulating the metal portions.

Power module and manufacturing method thereof

A double-sided cooling type power module according to the present invention includes: an upper substrate including an insulating layer, an upper metal layer bonded to a top of the insulating layer, and a lower metal layer bonded to a bottom of the insulating layer; a lower substrate disposed under the upper substrate and including an insulating layer, an upper metal layer bonded to a top of the insulating layer, and a lower metal layer bonded to a bottom of the insulating layer; a spacer disposed between the upper substrate and the lower substrate and electrically connecting the upper substrate and the lower substrate; and a semiconductor chip disposed between the spacer and the upper substrate or the lower substrate, in which the insulating layers are made of a material of which a coefficient of thermal expansion is 0.8 or more and 1.2 or less times of coefficients of thermal expansion of the metal layers of the upper substrate and the lower substrate.

Double-sided cooling type power module

Provided is a power module capable of preventing an overflow situation of solder and a movement of the solder when a chip and a spacer are bonded to each substrate by a soldering process, thereby being capable of increasing bonding quality between components through the soldering process.

Power module

An insulating substrate provided between the semiconductor chip and a cooler in the dual-side cooled power module includes: an inner metal layer configured to face the semiconductor chip; an outer metal layer configured to face the cooler; and an insulating layer interposed between the inner metal layer and the outer metal layer, wherein at least one inner thermal spreader of a plurality of inner thermal spreader is inserted into the inner metal layer.

Insulating substrate and power module using the same

A motor drive device includes: a first inverter including a plurality of first switching elements and connected to a plurality of coils; a second inverter including a plurality of second switching elements and connected to the plurality of coils; a plurality of transfer switching elements connected to the second ends; a capacitor disposed at one side of a casing of a motor; first and second cooling channels disposed at both sides of the capacitor; a plurality of first power modules including some of the plurality of first switching elements and some of the transfer switching elements; and a plurality of second power modules including some of the plurality of second switching elements.

Motor drive device

A multi-layered spacer of which a thermal expansion coefficient and a thermal conductivity are controllable and a double-sided cooling power module including the multi-layered spacer, is provided between a semiconductor chip and a substrate in a double-sided cooling power module. The multi-spacer includes first metal layers made of a first metal and provided as at least respective outermost layers, and a second metal layer made of a second metal having a thermal expansion coefficient lower than a thermal expansion coefficient of the first metal and disposed between the first metal layers provided as the outermost layers.

Multi-layered spacer and double-sided cooling power module including same

A soldering structure configured for preventing solder overflow during soldering and a power module, may include a component to be soldered; and a metal layer having a bonding area, to which the component to be soldered is bonded by solder, and a groove portion formed around the bonding area.

Soldering structure with groove portion and power module comprising the same

An insulating substrate provided between the semiconductor chip and a cooler in the dual-side cooled power module includes: an inner metal layer configured to face the semiconductor chip; an outer metal layer configured to face the cooler; and an insulating layer interposed between the inner metal layer and the outer metal layer, wherein at least one inner thermal diffusion inductor of a plurality of inner thermal diffusion inductors is inserted into the inner metal layer.

Insulating substrate and dual-side cooled power module using the same

Disclosed is a power module capable of maximizing heat dissipation performance through application of a thick lead frame and a ceramic coating layer to upper and lower sides of a semiconductor device.

Power module having heat dissipation structure

A power module includes a substrate having a dielectric layer, a first power semiconductor device disposed on an upper part of the substrate, and a second power semiconductor device disposed on a lower part of the substrate.

Power module and method of manufacturing same

A power module includes an upper substrate comprising a plurality of circuit pattern areas made of a metal and a dielectric area disposed between each of the plurality of circuit pattern areas; a lower substrate including a plurality of circuit pattern areas made of a metal and a dielectric area disposed between each of the plurality of circuit pattern areas; and a semiconductor element having an upper terminal and a lower terminal, the upper terminal and the lower terminal being bonded to a lower surface of the upper substrate and an upper surface of the lower substrate, respectively.

Power module and power conversion system including same

A power module having dual-sided cooling is provided with a semiconductor chip between an upper board and a lower board of the power module. In particular, the upper board includes: a first bonding layer made of a dielectric material, and a first electrode made of a copper material and provided on a first surface of the first bonding layer, and the first electrode is connected to the semiconductor chip. The lower board includes: a second bonding layer made of a dielectric material, and a second electrode made of a copper material and provided on a first surface of the second bonding layer, and the second electrode is connected to the semiconductor chip. More specifically, a thickness of the first electrode is greater than a thickness of the first bonding layer, and a thickness of the second electrode is greater than a thickness of the second bonding layer.

Power module having dual-sided cooling

Disclosed is a power module with double-sided cooling, comprising a semiconductor chip disposed between an upper substrate and a lower substrate; a first power lead disposed between the upper substrate and the semiconductor chip; a signal lead disposed between the upper substrate and the semiconductor chip, and spaced apart from the first power lead; a second power lead disposed between the lower substrate and the semiconductor chip; and a separation plate disposed between the first power lead, the signal lead, and the semiconductor chip; wherein the separation plate connects the first power lead with the semiconductor chip via a first hole formed through the separation plate, and connects the signal lead and the semiconductor chip via a second hole formed through the separation plate.

Growing community of inventors

Hwaseong-si, South Korea

Jun Hee Park