Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Sungkyunkwan University

Jun-hee Choi

Seung-nam Cha

Hang-woo Lee

Sun-il Kim

Jin-Seung Sohn

Ho-suk Kang

Eun-hyoung Cho

Chan-wook Baik

Sang-Hun Lee

Jong-min Kim

Byoung-lyong Choi

Chang-youl Moon

Mi-jeong Song

Seung-hwan Lee

Jong-Min Kim

Joo-ho Lee

Sang-jin Lee

Andrei Zoulkarneev

Tae-ho Kim

Byong-gwon Song

Un-jeong Kim

Moon-Jin Shin

Nae-Sung Lee

Deuk-Seok Chung

Won-jong Yoo

Yong-soo Choi

Ha-Jong Kim

Ha-jong Kim

Min-sup Choi

Xiao Chi Liu

Ji-a Lee

Yun-seong Lee

A flexible electric device includes a first electrode on a flexible member, at least one semiconductor element on the first electrode, at least one filling region adjacent to the semiconductor element and a second electrode on the semiconductor element.

Flexible electric device and method of manufacturing the same

A semiconductor compound structure and a method of fabricating the semiconductor compound structure using graphene or carbon nanotubes, and a semiconductor device including the semiconductor compound structure. The semiconductor compound structure includes a substrate; a buffer layer disposed on the substrate, and formed of a material including carbons having hexagonal crystal structures; and a semiconductor compound layer grown and formed on the buffer layer.

Semiconductor compound structure and method of fabricating the same using graphene or carbon nanotubes, and semiconductor device including the semiconductor compound structure

A flexible semiconductor device and a method of manufacturing the flexible semiconductor device are provided. The flexible semiconductor device may include at least one vertical semiconductor element that is at least partly embedded in a flexible material layer. The flexible semiconductor device may further include a first electrode formed on a first surface of the flexible material layer and a second electrode formed on a second surface of the flexible material layer. A method of manufacturing a flexible semiconductor device may include separating a flexible material layer, in which the at least one vertical semiconductor element is embedded, from a substrate by weakening or degrading an adhesive force between an underlayer and a buffer layer by using a difference in coefficients of thermal expansion of the underlayer and the buffer layer.

Flexible semiconductor devices and methods of manufacturing the same

A tunneling device may include a tunnel barrier layer, a first material layer including a first conductivity type two-dimensional material on a first surface of the tunnel barrier layer and a second material layer including a second conductivity type two-dimensional material on a second surface of the tunnel barrier layer. The tunneling device may use a tunneling current through the tunnel barrier layer between the first material layer and the second material layer.

Tunneling devices and methods of manufacturing the same

An active optical device and a display apparatus including the same are provided. The active optical device includes: first to third electrodes that are sequentially disposed spaced apart from one another; a first refractive index change layer disposed between the first electrode and the second electrode and in which a refractive index is changed by an electric field; and a second refractive index change layer disposed between the second electrode and the third electrode and in which a refractive index is changed by an electric field.

Active optical device and display apparatus including the same

The present disclosure relates to a method of transferring semiconductor elements from a non-flexible substrate to a flexible substrate. The present disclosure also relates to a method of manufacturing a flexible semiconductor device based on the method of transferring semiconductor elements. The semiconductor elements grown or formed on a non-flexible substrate may be effectively transferred to a resin layer while maintaining an arrangement of the semiconductor elements. The resin layer may function as a flexible substrate for supporting the vertical semiconductor elements.

Methods of transferring semiconductor elements and manufacturing semiconductor devices

A stacked structure may include semiconductors or semiconductor layers grown on an amorphous substrate. A light-emitting device and a solar cell may include the stacked structure including the semiconductors grown on the amorphous substrate. A method of manufacturing the stacked structure, and the light-emitting device and the solar cell including the stacked structure may involve growing a crystalline semiconductor layer on an amorphous substrate.

Stacked structure including vertically grown semiconductor, p-n junction device including the stacked structure, and method of manufacturing thereof

An active optical device is provided. The active optical device includes an optically variable layer having a refractive index which changes according to temperature; and a temperature control unit that controls a temperature of one or more regions of the optically variable layer.

Active optical device using phase change material

Provided is a method of transferring semiconductor elements formed on a non-flexible substrate to a flexible substrate. Also, provided is a method of manufacturing a flexible semiconductor device based on the method of transferring semiconductor elements. A semiconductor element grown or formed on the substrate may be efficiently transferred to the resin layer while maintaining an arrangement of the semiconductor elements. Furthermore, the resin layer acts as a flexible substrate supporting the vertical semiconductor elements.

Flexible semiconductor device and method of manufacturing the same

An active optical device includes a substrate; a plurality of refractive index variable regions formed on the substrate; and a voltage applier which applies an electric field to the plurality of refractive index variable regions.

Active optical device employing refractive index variable regions

A method of fabricating a gallium nitride (GaN) thin layer, by which a high-quality GaN layer may be grown on a large-area substrate using an electrode layer suspended above a substrate, a GaN film structure fabricated using the method, and a semiconductor device including the GaN film structure. The method includes forming a sacrificial layer on a substrate, forming a first buffer layer on the sacrificial layer, forming an electrode layer on the first buffer layer, forming a second buffer layer on the electrode layer, partially etching the sacrificial layer to form at least two support members configured to support the first buffer layer and form at least one air cavity between the substrate and the first buffer layer, and forming a GaN thin layer on the second buffer layer.

GaN film structure, method of fabricating the same, and semiconductor device including the same

A method of manufacturing a field emission device (FED), which reduces the number of photomask patterning processes and improves the manufacturing yield of the FED, is provided. The method includes steps of sequentially forming a cathode layer, a first insulating layer, and a gate layer on a substrate, forming a protection layer on the gate electrode layer, etching portions of the protection layer and gate electrode to form a plurality of first opening holes where portions of the first insulating layer being exposed through the first opening holes, forming a second insulating layer on the protection layer and on the first opening holes, forming a focus electrode layer on the second insulating layer, forming a photoresist layer on the focus electrode layer, etching a portion of the photoresist layer and a portion of the focus electrode layer to form a second opening hole where a portion of the second insulating layer being exposed through the second opening hole, and forming emitter holes exposing a portion of the cathode layer by etching the exposed surface of the second insulating layer to a bottom surface of the first insulating layer. After removing the photoresist layer electron emission emitters are formed on the cathode layer.

Method of manufacturing field emission device

A thermal electron emission backlight device comprises: a first substrate and a second substrate disposed in parallel and separated by a predetermined distance from each other; a first anode electrode and a second anode electrode facing the first anode electrode, the first and second anode electrodes being formed on inner surfaces of the first substrate and the second substrate, respectively; cathode electrodes disposed at predetermined intervals and in parallel with each other between the first substrate and the second substrate; a phosphor layer formed on the second anode electrode; and a plurality of spacers disposed between the first substrate and the second substrate so as to maintain the predetermined distance therebetween. When a predetermined voltage is applied to the cathode electrodes, thermal electrons are emitted from the cathode electrodes.

Thermal electron emission backlight device

A field emission device, a field emission display for displaying images with good quality adopting the same, and a manufacturing method thereof are provided. The field emission device allows a mesh grid to closely contact the surface of a field emission array on a substrate and for this purpose, applies a tensile force to the mesh grid using a predetermined tension member.

Field emission device, field emission display adopting the same and manufacturing method thereof

A field emission device (FED) and a method for fabricating the FED are provided. The FED includes micro-tips with nano-sized surface features, and a focus gate electrode over a gate electrode, wherein one or more gates of the gate electrode is exposed through a single opening of the focus gate electrode. In the FED, occurrence of arcing is suppressed. Although an arcing occurs in the FED, damage of a cathode and a resistor layer is prevented, so that a higher working voltage can be applied to the anode. Also, due to the micro-tips with nano-sized surface features, the emission current density of the FED increases, so that a high-brightness display can be achieved with the FED. The gate turn-on voltage can be lowered due to the micro-tip as a collection of nano-sized tips, thereby reducing power consumption.

Growing community of inventors

Seongnam-si, South Korea

Jun-hee Choi