Hynix Semiconductor Inc.

Samsung Sds Co., Ltd.

Jun Hee Cho

Sung Eon Park

Sang Don Lee

Jin Hong Ahn

Yil Wook Kim

Sung Ho Jang

Seok Kiu Lee

Kyung Jun An

Il Wook Kim

Tae Hang Ahn

Yun Jin Bae

Jong Yoon Jo

A method and an apparatus for creating a workflow, the method being performed by a computing device, and including obtaining a log file generated while a user performs a task, parsing each of a plurality of events recorded in the log file, and creating an activity sequence to correspond to an order of the events, grouping a plurality of partial sequences extracted from the activity sequence, and creating a plurality of activity groups to correspond to each of a plurality of different repetitive tasks included in the task and creating the workflow of at least one activity group among the plurality of activity groups.

Method and apparatus for creating workflow based on log

According to aspects of the present disclosure, a change detection method for ROBOT process automation (RPA) performed by a computer device includes obtaining object information of a target object from first working environment information at a first time, and determining a comparison object detected in second working environment information at a second time as an object corresponding to the target object based on the obtained object information of the target information. Thus, even if an error occurs due to a change in a working environment, an RPA apparatus can operate normally by correcting the error by itself without the need for a user to recreate a new bot or modify the existing bot. Also, even if the position or shape of an object referred to by RPA in a screen is changed, the RPA apparatus can accurately find an object to manipulate based on surrounding information and perform RPA normally.

Robot process automation apparatus and method for detecting changes thereof

A semiconductor device has a silicon substrate, in which an active region is formed between two device isolation films and a gate is formed on the surface of the active region. The silicon substrate has a laterally etched portion in the active region below the surface of the active region on the side near the device isolation film. An insulating film is formed on the laterally etched portion of the silicon substrate. A conductive electrode is formed on the insulating film, through which an external voltage is applied to adjust a threshold voltage. The device isolation film is formed on the conductive electrode. None or some pockets of vacant cavity is present between the device isolation film and the conductive electrode.

Semiconductor device capable of threshold voltage adjustment by applying an external voltage

Disclosed is a method of manufacturing a semiconductor device. The method comprises the steps of: preparing a silicon substrate having a predetermined lower structure including a gate and a bonding area; forming an interlayer dielectric film on the top side of the substrate; forming a photosensitive film pattern, which exposes an area for providing contact, on the interlayer dielectric film; forming a contact hole exposing a bonding area of the substrate by etching the exposed part of the interlayer dielectric film; removing the photosensitive film pattern; performing a dry cleaning on the exposed bonding area of the substrate so that CF based polymer formed in the etching step is removed; and performing a nitrogen-hydrogen plasma processing on the surface of the exposed bonding area of the substrate so that oxygen polymer and remaining CF-based polymer are removed. Therefore, since hydrogen plasma processing is performed after contact etching, ohmic contact characteristics can be secured. In addition, since the hydrogen plasma processing is performed using a conventional photosensitive film strip apparatus, cost required to install and maintain an additional apparatus is not generated.

Method of manufacturing semiconductor device

Growing community of inventors

Seoul, South Korea

Jun Hee Cho