Hynix Semiconductor Inc.

Samsung Electronics Co., Ltd.

Jun-Hee Cho

Sang-hoon Park

Yong-su Kim

Seong-hoon Choi

Seung-young Byun

Yong-Jin Kwon

Seung Chan Heo

Jeongsik Mun

Bohwa Chung

Gyehun Jeon

Jaesook Joo

Hyoung-Youn Na

A semiconductor device includes a trench formed in a predetermined portion of a substrate and a first recess region beneath the trench. A field oxide layer is buried into both the trench and the first recess region. An active region is defined by the field oxide layer, having first active region and a second active region. The latter has a second recess region formed in lower portion of the active region than the former. A step gate pattern is formed on border region between the first active region and the second active region. The gate pattern has step structure whose one side extends to a surface of the first active region and the other side extends to a surface of the second active region. Other embodiments are also described.

Semiconductor device with increased channel length and method for fabricating the same

A method for fabricating a semiconductor device to enlarge a channel region is provided. The channel region is enlarged due to having pillar shaped sidewalls of a transistor. The transistor includes a fin active region vertically protruding on a substrate, an isolation layer enclosing a lower portion of the fin active region, and a gate electrode crossing the fin active region and covering a portion of the fin active region. An isolation layer is formed enclosing a lower portion of the fin active region and the isolation layer under the spacers is partially removed to expose a portion of the sidewalls of the fin active region. Subsequently, dry etching is performed to form the sidewalls having a pillar/neck.

Transistor and method for fabricating the same

A semiconductor device includes a trench formed in a predetermined portion of a substrate and a first recess region beneath the trench. A field oxide layer is buried into both the trench and the first recess region. An active region is defined by the field oxide layer, having a first active region and a second active region. The latter has a second recess region formed in a lower portion of the active region than the former. A step gate pattern is formed on a border region between the first active region and the second active region. The gate pattern has a step structure whose one side extends to a surface of the first active region and the other side extends to a surface of the second active region. Other embodiments are also described.

A semiconductor device includes an active region defining at least four surfaces, the four surfaces including first, second, third, and fourth surfaces, a gate insulation layer formed around the four surfaces of the active region, and a gate electrode formed around the gate insulation layer and the four surfaces of the active region.

Semiconductor device with increased channel area

Semiconductor device with increased channel area and fabrication method thereof

A method for fabricating a semiconductor device with a bulb-shaped recess gate pattern is provided. The method includes forming a plurality of oxide layers over a substrate; forming a silicon layer to cover the oxide layers; forming a mask over the silicon layer; etching the silicon layer using the mask as an etch mask to form a plurality of first recesses to expose the oxide layers; etching the oxide layers to form a plurality of second recesses; and forming a plurality of gate patterns at least partially buried into the first recesses and the second recesses.

Method for fabricating semiconductor device with bulb-shaped recess gate

A method for fabricating a semiconductor device includes forming a sacrificial layer over a substrate, forming a contact hole in the sacrificial layer, forming a pillar to fill the contact hole. The pillar laterally extends up to a surface of the sacrificial layer and then the sacrificial layer is removed. The method further includes forming a gate dielectric layer over an exposed sidewall of the pillar, and forming a gate electrode over the gate dielectric layer. The gate electrode surrounds the sidewall of the pillar.

Method for fabricating vertical channel transistor in a semiconductor device

A method for fabricating a semiconductor device, the method includes forming an etch stop layer and an insulation layer over a substrate having a first region and a second region, selectively removing the insulation layer and the etch stop layer in the first region to expose parts of the substrate, thereby forming at least two electrode regions on the exposed substrate and a resultant structure, forming a conductive layer over the resultant structure, removing the conductive layer in the second region, removing the insulation layer in the first region and the second region by using wet chemicals, and removing parts of the conductive layer, which formed between the at least two electrode regions in the first region, to form cylinder type electrodes in the first region.

Method for fabricating semiconductor device

A method for fabricating a semiconductor device includes etching a portion of a substrate to form a recess. A polymer layer fills a lower portion of the recess. Sidewall spacers are formed over the recess above the lower portion of the recess. The polymer layer is removed. The lower portion of the recess is isotropically etching to form a bulb-shaped recess.

Method for fabricating semiconductor device having bulb-shaped recess gate

A semiconductor structure has an active region on a substrate, and recessed portions are formed at lower edges of lateral portions of the semiconductor structure. Patterned first insulation layers for device isolation are buried into the recessed portions. Second insulation layers for device isolation are formed on sidewalls of the first insulation layers.

Semiconductor device and method for fabricating a semiconductor device

A device for and a method of cleaning a photoreceptor medium of an electrophotographic image forming apparatus include a magnet which is installed in a lengthwise direction of the photoreceptor medium and is separated from an outer surface of the photoreceptor medium, and a magnetic fluid which fills a space between the magnet and the outer surface of the photoreceptor medium and closely contacts the outer surface of the photoreceptor medium. Accordingly, abrasion of the photoreceptor medium can be prevented, and since the developer does not stick to the magnetic fluid, a decrease in a cleaning efficiency can be prevented.

Device for and method of cleaning photoreceptor medium of electrophotographic image forming apparatus

A liquid image developing system, including a cartridge in which a developer is stored; a supply line; a development container to which the developer is supplied from the cartridge through the supply line; a photosensitive body in the development container; a development roller partially soaked in the developer in the development container and rotating opposite to the photosensitive body; a depositing member to create a potential difference required to attach the developer to a circumference of the development roller, opposite to the development roller; a metering blade to scratch the developer attached to the circumference of the development roller to a predetermined thickness; and an agitator to agitate the developer contained in the development container. Accordingly, a high-concentration developer can be directly used in the development operation without a dilution operation, and thus the structure to supply the developer can be considerably simplified.

Growing community of inventors

Ichon-shi, South Korea

Jun-Hee Cho