Nec Corporation

Konami Digital Entertainment Co., Ltd.

Oki Electric Industry Co., Ltd.

Nara Institute of Science and Technology

Jun Hayashi

Tsuyoshi Yamaguchi

Michiko Yamanaka

Kazuya Takahashi

Yusuke Fukuoka

Daisuke Sogabe

Masahide Nakamura

Takaaki Horibuchi

Junichi Fujita

Yoshinobu Kimura

Mitsuharu Ozawa

A game device includes an owned card storage unit for storing player cards owned by a game player, and a player card exchange unit for exchanging a player card owned by the game player with an exchangeable card presented by a CPU, wherein the player card exchange unit includes an exchangeable card presentation unit for determining the exchangeable cards based on the player cards owned by the game player to be presented on a screen, an exchange condition presentation unit for setting an exchange condition for exchanging the exchangeable card with the player card owned by the game player to be presented on the screen; and an exchange execution unit for approving the exchange of the player card and the exchangeable card when the player card that satisfies the exchange condition is selected by the game player, and updating the memory content of the owned card storage unit to a content after the approval of the exchange.

Game device, game control method, recording medium and game management device

A manager evaluation value setting unit sets a manager evaluation value indicating a management ability of a manager character to manage player characters. A player evaluation value setting unit sets a player evaluation value used to evaluate the player character according to an ability value indicating an ability of the player character. An evaluation difference value calculating unit calculates an evaluation difference value indicating a difference between the manager evaluation value and the player evaluation value when the manager evaluation value is lower than the player evaluation value. A management ability setting unit changes the manager evaluation value to reduce the management ability of the manager character as the evaluation difference value increases.

Game control system recording medium and game system control method

A gateway device includes a base processor which converts a signal input from an IP network to a signal which can be handled by the gateway device, and a home appliance control processor having a controller which converts the signal which can be handled by the gateway device to a control signal in compliance with the communications protocol of a home appliance to be controlled. The controller stores, on a table, information about the communications protocol, driver, controllable setting condition and status of respective appliances to be controlled in association with each other. The controller also includes a conversion functional block which converts information supplied to the control information of the communications protocol of the respective appliances to be controlled on the basis of the stored information.

Gateway device allowing home network appliances to be introduced and controlled over a network and a control method therefor

An upper wiring layer formed with a bonding pad portion has a stacked structure of a first titanium nitride film, a titanium film, a second titanium nitride film and an aluminum alloy film on the upper surface of an interlayer insulation layer. Also, the upper wiring has a stacked structure of titanium silicide film, the titanium film, the titanium nitride film and the aluminum alloy film. The fabrication process includes forming the interlayer insulation layer having a silicon oxide film by plasma CVD using silane and N.sub.2 O and processing an upper surface of the interlayer insulation layer by plasma under a nitrogen atmosphere to form a plasma processed nitrogen layer.

Fabrication process for a semiconductor device

An upper wiring layer formed with a bonding pad portion has a stacked structure of a first titanium nitride film, a titanium film, a second titanium nitride film and an aluminum alloy film on the upper surface of an interlayer insulation layer. Also, the upper wiring has a stacked structure of titanium silicide film, the titanium film, the titanium nitride film and the aluminum alloy film.

Semiconductor device and fabrication process therefor

A vapor phase epitaxial growth method of a compound semiconductor is provided. On a semiconductor substrate held by a holder, a first epitaxial layer is grown using a first growth gas and then, a separator gas is emitted to the vicinity of the substrate to separate the substrate from the first growth gas. After the separator gas is removed from the vicinity, a second growth gas is supplied to the vicinity to form a second epitaxial layer on the first epitaxial layer. Since the substrate is separated by the separator gas from the first growth gas, transition regions of crystal composition and carrier concentration are difficult to be generated.

Growing community of inventors

Tokyo, Japan

Jun Hayashi