Hitachi, Ltd.

Tohoku University

Hitachi Global Storage Technologies Japan, Ltd.

Hitachi-high-technologies Corporation

Hitachi Automotive Systems, Ltd.

Hitachi Metals, Ltd.

Jun Hayakawa

Kenchi Ito

Hideo Ohno

Hiromasa Takahashi

Shoji Ikeda

Yosuke Kurosaki

Shin Yabuuchi

Katsuya Miura

Akinori Nishide

Hiroyuki Yamamoto

Susumu Soeya

Ken Ohsumi

Young Min Lee

Hideyuki Matsuoka

Takeshi Shimada

Tsutomu Tetsuka

Makoto Satake

Tsukasa Fujimori

Futoshi Furuta

Naohiro Yamamoto

Yuji Suwa

Naoto Fukatani

Atsushi Yoshida

Masakuni Okamoto

Yuzuru Miyazaki

Tomohisa Takamatsu

Kei Hayashi

Shin Yabuchi

A hydrogen production apparatus including a photocatalyst and generating hydrogen from water includes a wavelength separation unit separating sunlight by wavelength, an infrared light conversion unit converting infrared light separated by the wavelength separation unit to visible light, and an ultraviolet light conversion unit converting ultraviolet light separated by the wavelength separation unit to visible light.

Hydrogen production apparatus

The present invention improves the performance of a thermoelectric conversion material and a thermoelectric conversion module. A thermoelectric conversion material has a mother phase containing a chimney ladder type compound comprising a first element of groups 4 to 9 and a second element of groups 13 to 15 and an additive phase existing at a grain boundary of the mother phase, the mother phase contains a third element to change a lattice constant of the chimney ladder type compound, and the additive phase contains the second element.

Thermoelectric conversion material and thermoelectric conversion module

The present invention aims at providing a thermoelectric conversion module with low toxicity, which exhibits conversion efficiency equivalent to that of BiTe. The thermoelectric conversion module of the present invention employs a full Heusler alloy as the material for forming the P-type thermoelectric conversion unit and the N-type thermoelectric conversion unit. The material for forming the N-type thermoelectric conversion unit contains at least any one of Fe, Ti, and Si and Sn.

Thermoelectric conversion module

Provided is a thermoelectric conversion element having a greater Seebeck coefficient (S) than the conventional ones. In a thermoelectric conversion element: a nonmagnetic Heusler alloy film (), a ferromagnetic Heusler alloy film () and a nonmagnetic layer () are stacked in the named order; a pair of electrodes () are disposed for deriving, in accordance with a temperature gradient occurring in parallel to the direction of magnetization () of the ferromagnetic Heusler alloy film, an electromotive force occurring perpendicularly to the direction of magnetization of the ferromagnetic Heusler alloy film; a pair of electrodes () are disposed for deriving an electromotive force occurring in parallel to the direction of magnetization of the ferromagnetic Heusler alloy film; and the electromotive forces occurring due to an ordinary Seebeck effect and a spin Seebeck effect are simultaneously derived.

Thermoelectric conversion element and thermoelectric conversion module using same

In order to provide a thermoelectric conversion element which has a high Seebeck coefficient, a low thermal conductivity, and a high performance, even if the material system that has a low environmental load and can reduce the cost is used, the thermoelectric conversion element in which lattice points are classified into two or more kinds (A site and B site), lattices of which the kinds are different are connected to each other, the numbers of lattices of which the kinds are different are different (A site: 2, and B site: 1), and a lattice structure is configured by arranging nanoparticles or semiconductor quantum dots, includes areas of which conductivity types are different.

Thermoelectric conversion element and thermoelectric conversion module

A thermoelectric conversion device includes a Heusler alloy film having a structure of Bor Lin notation of ABC and a pair of electrodes on the Heusler alloy film to output an electromotive force generated by a thermal gradient in the Heusler alloy film. The thermoelectric conversion device further includes an electrode for applying an electric field or a voltage to the Heusler alloy film to increase and control an electric conductivity and a Seebeck coefficient S of the Heusler metal film. The device can control to increase an electric conductivity and Seebeck coefficient S by applying an electric field or a voltage through an insulation film to the Heusler alloy film. The device may have a shared connection to select one of outputs of a plurality of thermoelectric conversion devices arranged in a matrix or increase an electromotive force as an output.

Thermoelectric conversion device

The present invention prevents adverse effects on an external device due to radiation noise from a signal line. A stereo camera device is provided with: a case; a first image-capturing unit provided at one end in a longitudinal direction of the case; a second image-capturing unit provided at the other end; a circuit board provided inside the case, a processing circuit connected to each of the first image-capturing unit and the second image-capturing unit by a signal line being mounted on the circuit board, and a connector for outputting a signal processed by the processing circuit to an external apparatus being disposed on the circuit board; and a partition member for partitioning the inside of the case into a plurality of spaces along the longitudinal direction at a first interval that corresponds to a frequency bandwidth in which radiation noise from the signal line is suppressed.

Stereo camera device

The present invention provides a method for manufacturing a magnetoresistive element having a high selection ratio of an insulating layer to a free layer. The method for manufacturing a magnetoresistive element includes the steps of preparing (left drawing, middle drawing) a substrate on which a free layer, a fixed layer disposed under a first magnetic layer, and a barrier layer that is an insulating layer disposed between the free layer and the fixed layer are formed and processing (right drawing) the free layer by plasma etching, in which an insulating layer configuring the barrier layer contains a Ta element or a Ti element.

Method of manufacturing magnetoresistive element

Provided is a magnetic random access memory to which spin torque magnetization reversal is applied, the magnetic random access memory being thermal stable in a reading operation and also being capable of reducing a current in a wiring operation. A magnetoresistive effect element formed by sequentially stacking a fixed layer, a nonmagnetic barrier layer, and a recording layer is used as a memory element. The recording layer adopts a laminated ferrimagnetic structure. The magnetic memory satisfies the expression M(t/w)&#x3e;|J|&#x3e;(2kT&#x394;)/S, in which kis a Boltzmann constant, T is an operating temperature of the magnetic memory, S is an area parallel to a film surface of the magnetoresistive effect element, t and Mare respectively a film thickness and a saturated magnetization of the ferromagnetic layer having a smaller film thickness among two ferromagnetic layers which are constituent members of the laminated ferrimagnetic structure, w is a length of a short side of the recording layer, &#x394; is a thermal stability index of the magnetic memory, and Jis exchange coupling energy acting between the two ferromagnetic layers of the recording layer.

Magnetic memory

Disclosed are a magnetoresistance effect element equipped with an magnesium oxide passivation layer, and a high-speed, ultra-low power consumption nonvolatile memory using said element. A tunnel magnetoresistance effect (TMR) film comprised of a ferromagnetic free layer, an insulation layer, and a ferromagnetic fixed layer is provided, and an MgO passivation layer is provided on the side walls of a protective layer and an orientation control layer, thus suppressing elemental diffusion of a tunnel magnetoresistance effect (TMR) element from each layer due to thermal processing at 350&#xb0; or higher and obtaining a magnetic memory cell and magnetic random access memory having stable, high-output reading and a low current writing characteristics. Furthermore, when CoFeB is used in the ferromagnetic layer and MgO is used in the insulation layer, it is preferable that the MgO passivation layer have an (001) orientation.

Magnetoresistance effect element and magnetic memory cell and magnetic random access memory using same

Provided is a high-speed and ultra-low-power-consumption nonvolatile memory having a high temperature stability at a zero magnetic field. In a tunnel magnetoresistive film constituting a nonvolatile magnetic memory that employs a writing method using a spin-transfer torque, an insulating layer and a nonmagnetic conductive layer are stacked above a ferromagnetic free layer.

Magnetoresistive element, magnetic memory cell and magnetic random access memory using the same

Disclosed herein is a vehicle-mounted type of camera capable of being reduced in the space required for installation on the windshield of a vehicle. An imaging unitis provided on a substrateand has an optical axis in a direction perpendicular to the substrate surface. The substrateis set up in parallel with respect to the windshield of the vehicle. A lensis disposed on the optical axis. A mirroris also provided on the optical axis of the imaging unit, and is adapted to change a direction of the optical axis to a frontward direction of the vehicle, thus guiding frontward visual field information of the vehicle to the imaging unit. The mirroris retained in an attachment. The attachmentcan be engaged with and disengaged from an enclosurethat holds the lens

Camera for mounting in motor vehicle

Provided is a reliable nonvolatile memory with a lower power consumption. A ferromagnetic interconnection which is magnetized antiparallel or parallel to a magnetization direction of a ferromagnetic pinned layer in a giant magnetoresistive device or a tunnel magnetoresistive device constituting the magnetic memory cell, is connected to a ferromagnetic free layer with a non-magnetic layer being interposed in between, the ferromagnetic free layer serving as a recording layer. Thereby, the magnetization of the recording layer is switched by use of a spin transfer torque.

Magnetic memory cell and magnetic random access memory

A low-power consumption non-volatile memory employing an electric field write magnetic recording element is provided. A multiferroic layeris provided adjacent to a magnetic recording layer, and by applying an electric field to the multiferroic layer to control the dielectric state of the multiferroic, the magnetization direction of the magnetic recording layer is controlled and information is written. Reading is performed by electrically detecting the magnetization direction of the magnetic recording layer by way of a magnetoresistive effect.

Magnetic recording element, magnetic memory cell, and magnetic random access memory

Disclosed herein is a vehicle camera system adapted for easy position matching of an image sensor and a lens assembly, and capable of being reduced in assembling time. After accommodation of the image sensorin a concave portionof the lens assembly, when (a) first and second protrusionsof an elastic bodyare inserted into first and second clearances, respectively, and (b) the elastic bodyis pressed from a direction of a circuit board, curved surfacesconvert the pressing direction into a force direction in which first and second datum planesof the image sensor will be positioned with respect to first and second optical datum planes, respectively, and the conversion results in first and second opposed planesof the image sensor being positioned with respect to the first and second optical datum planes, respectively, and a third datum planeof the image sensor being positioned with respect to a third optical datum planeby the force applied in the pressing direction.

Growing community of inventors

Sendai, Japan

Jun Hayakawa