Hitachi, Ltd.

Hiatchi, Ltd.

Jun Gotou

Takeo Shiba

Hiroshi Fukuda

Kazuo Takeda

Makoto Ohkura

Masakazu Saito

Takeshi Satou

To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light. The process comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam.

Semiconductor thin film and process for production thereof

Growing community of inventors

Mobara, Japan

Jun Gotou