Panasonic Liquid Crystal Display Co., Ltd.

Hitachi Displays, Ltd.

Japan Display Inc.

Hitachi, Ltd.

Hitachi Device Engineering Co., Ltd.

Jun Gotoh

Kazuo Takeda

Hiroaki Asuma

Masanao Yamamoto

Makoto Kurita

Shinichi Komura

Toshiki Kaneko

Hirotaka Imayama

Takanori Nakayama

Masato Shimura

Eiji Oue

Masakazu Saito

Katsumi Nakayashiki

Yuichi Harano

Taro Asai

Kiyoshi Ogata

Takeshi Sato

Makoto Ohkura

Yukio Takasaki

Kazuhiko Horikoshi

Takuo Tamura

Kenji Anjo

Katsutoshi Saito

Naotoshi Akamatsu

Hironaru Yamaguchi

Daisuke Mutou

Yoshitomo Ogishima

Eisuke Hatakeyama

Ichiro Yamakawa

In a liquid crystal display device it is desirable to test in the state of TFT substrates, without reducing the number of TFT substrates to be obtained from one mother TFT substrate, and without increasing the overall size of the TFT substrates. Test terminals are formed on the outside of terminals for driving the liquid crystal display device. The test terminals of the specific TFT substrate are formed in another TFT substrate just below the specific TFT substrate. The area in which the test lines are formed is a space in which a sealing material is formed, between the display area and an end of the lower TFT substrate. Thus, the size of the TFT substrates is not actually increased. A test line area is not separately formed and not discarded, so that the number of TFT substrates to be obtained from one mother TFT substrate is not reduced.

Display device

A liquid crystal display device includes a TFT substrate having a display area in which pixels are arranged, and a terminal portion, a counter substrate disposed opposite to the TFT substrate, a sealing material formed in a periphery to bond the TFT and counter substrates together, and with a liquid crystal layer interposed between an orientation film formed on the TFT substrate and an orientation film formed on the counter substrate. A first, second, or third color filter is formed corresponding to each of the pixels in the display area of the TFT substrate, and an orientation film stopper is formed by an overlapping portion of the first, second, or third color filter at least in an area between the display area and the terminal portion of the TFT substrate so that a profile of the orientation film is defined by the orientation film stopper.

Liquid crystal display device

An organic EL display device includes scanning lines, video signal lines, and pixels, each including a TFT having a semiconductor layer and an organic EL layer located between a lower electrode and an upper electrode. A source electrode connecting the semiconductor layer and the lower electrode is formed of three layers including a barrier metal, an Al-containing metal, and a cap metal. The barrier metal is formed of a first layer in contact with the semiconductor layer and a second layer in contact with the Al-containing metal. Each of the first layer, the second layer, and the cap metal is formed of a metal comprising a high melting point metal, and an amount of oxygen in the first layer is larger than an amount of oxygen in the second layer.

Display device comprising a TFT with a barrier metal formed of a first layer and a second layer wherein an amount of oxygen in the first layer is larger than in the second layer

Manufacturing method of a liquid crystal display device having a TFT substrate with a display area in which pixels are arranged, a counter substrate, a sealing material formed in a periphery to bond the TFT and counter substrates, and a liquid crystal layer interposed between an orientation film on the TFT substrate and an orientation film on the counter substrate. The method includes the steps of forming a first color filter, a second color filter, or a third color filter corresponding to each of the pixels in the display area of the TFT substrate, and forming an orientation film stopper by overlapping a portion of the first color filter, the second color filter, or the third color filter, in an area between the display area and the sealing material. A profile of the orientation film formed in the TFT substrate is defined by the orientation film stopper.

Manufacturing method of liquid crystal display device

A contact resistance in a through-hole with a source or a drain electrode connected to a TFT is decreased, thereby improving the operation efficiency of a display device. In the through-hole, a source portion of the TFT is connected to a source electrode. The source electrodeis formed of three layers comprising a barrier metal, an Al alloy, and a cap metal. The barrier metal is divided into a lower layerin contact with the semiconductor layer and an upper layerin contact with the Al alloy. The lower layerof the barrier metal is formed by sputtering, the lower layeris heat-treated and, subsequently, an upper layerof the base metal, the Al alloy, and the cap metalare formed continuously by sputtering. Since the upper layerof the barrier metal in contact with the Al alloyis not oxidized, increase in the contact resistance in the through-hole can be prevented.

Liquid crystal display device comprising a TFT with a barrier metal formed of a first layer and a second layer wherein the first layer is denser than the second layer

A liquid crystal display device includes a TFT substrate with gate lines and drain lines, and pixel electrodes each formed in a region surrounded by the gate lines and drain lines. Protrusions are formed below the gate lines, each of the protrusions having an upper surface and at least one inclined side surface. A gate insulating film is formed over the gate lines, a semiconductor layer formed on the gate insulating film, and drain electrodes formed and source electrodes formed over the semiconductor layer. Channel portions are defined by the space between the drain electrodes and the source electrodes, each of the channel portions being formed covering the upper surface and at least one of the at least one inclined side surface of one of the protrusions, the pixel and source electrode being in contact with each other on at least one inclined side surface of the protrusion.

A manufacturing method of a display device including a gate electrode film, a first electrode film, a second electrode film, and a conductive film connected to the first electrode film and formed of a conductive layer including a first conductive layer and a second conductive layer formed overlapping the first conductive layer. The method includes the steps of forming the first electrode film and the second electrode film, forming the conductive layer such that the conductive layer is connected to the first electrode film and the second electrode film, and forming the conductive film by removing regions other than predetermined regions of the conductive layer, wherein the conductive layer forming step includes the steps of forming the first conductive layer on the respective upper surfaces of the first electrode film and the second electrode film and forming the second conductive layer on the upper surface of the first conductive layer.

Display device and manufacturing method thereof

A liquid crystal display device having a high definition screen in which a pixel electrode is formed in a region surrounded by a gate line and a drain line, and a trapezoidal protrusion having an upper surface and inclined surfaces is formed below the gate line. Since a TFT is formed over a trapezoidal protrusion and a channel portion is formed over the upper surface and the inclined surfaces of the trapezoidal protrusion, the width of the channel portion can be enlarged compared to that of a channel portion formed over a plane. The pixel electrode is in contact with a source electrode at the inclined surface of the trapezoidal protrusion. This configuration allows the TFT and a contact of the pixel electrode and a source electrode to be formed over part of the trapezoidal protrusion.

A liquid crystal display device includes a TFT substrate having a display area in which pixels each wutg a pixel electrode and a TFT are arranged in a matrix form, a counter substrate disposed opposite to the TFT substrate, a sealing material formed in the periphery to bond the TFT substrate and the counter substrate, and a liquid crystal layer interposed between an orientation film formed on the TFT substrate and an orientation film formed on the counter substrate. A first, second or third color filter is formed corresponding to each of the pixels in the display area of the TFT substrate, and an orientation film stopper is formed by an overlapping portion of the first, second or third color filter, outside of the display area. A profile of the orientation film formed on the TFT substrate is defined by the orientation film stopper.

Provided is a technology for preventing current leak of a charge holding capacitor which constitutes a pixel of a display device so as to prevent deterioration of display image quality of the display device. The display device includes a first contact hole connecting a first wiring layer and a second wiring layer which is formed over the first wiring layer, a second contact hole connecting the second wiring layer and a third wiring layer which is formed over the second wiring layer, and an electrode layer formed between the plurality of insulating films disposed between the second wiring layer and the third wiring layer, wherein at a position in a substrate surface direction, a distance between a electrode layer and the second contact hole is larger than a distance between the electrode layer and the first contact hole.

Active matrix display device

There is provided a liquid crystal display device having color filters on a side of a TFT substrate, in which an orientation film is formed by inkjet printing. The formation of an orientation film by inkjet printing is more advantageous than the conventional flexographic printing in terms of the production cost. It is necessary, however, to reduce the viscosity of the orientation film to be applied by inkjet printing. For this reason, first and second orientation film stoppers are formed between a display area and a sealing portion in a TFT substrate, to prevent the orientation film from flowing to an end of the TFT substrate. The orientation film stoppers are formed by the overlapping of color filters. A profile of the orientation film is defined by the first orientation film stopper. The second orientation film stopper is formed to ensure that the orientation film does not flow to the outside.

The present invention provides a display device which can prevent the deterioration of a transparent conductive film attributed to a cell reaction without pushing up a cost of a film forming device. The display device includes a first conductive layer which is formed of a transparent conductive film containing indium oxide as a main component, a conductive background layer which is formed on the first conductive layer, a second conductive layer which is formed of a film containing Al as a main component on the background layer, and a third conductive layer which is formed of the same material as the second conductive layer on the second conductive layer. On an interface between the second conductive layer and the third conductive layer, positions of grain boundaries are arranged discontinuously. Further, the background layer is a film which contains any one of Mo, Ti and Ta as a main component. Still further, the third conductive layer is used as a reflective electrode.

Display device and fabrication method of display device

A laser light is projected to a thin film deposited on a transparent substrate, and measurement is performed on the entire measurement area of the substrate, and transmission intensity is measured by a transmission light intensity monitor and reflection light intensity is measured by a reflection light intensity monitor at the same points and at the same number of points on the substrate. From the value of 'A=1&#x2212;(R+T)' where R represents reflectivity and T is transmissivity, film thickness is measured and evaluated from the relation of the value A with film thickness. By this procedure, film thickness can be determined on 10,000 substrates or more per minute and film thickness of thin film can be measured over the entire substrate surface.

Method for measuring thickness of thin film, method for forming polycrystal semiconductor thin film, method for manufacturing semiconductor device, apparatus for manufacturing the same, and method for manufacturing image display device

The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.

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Mobara, Japan

Jun Gotoh